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Advances in the Application of Perovskite Materials.
Zhang, Lixiu; Mei, Luyao; Wang, Kaiyang; Lv, Yinhua; Zhang, Shuai; Lian, Yaxiao; Liu, Xiaoke; Ma, Zhiwei; Xiao, Guanjun; Liu, Qiang; Zhai, Shuaibo; Zhang, Shengli; Liu, Gengling; Yuan, Ligang; Guo, Bingbing; Chen, Ziming; Wei, Keyu; Liu, Aqiang; Yue, Shizhong; Niu, Guangda; Pan, Xiyan; Sun, Jie; Hua, Yong; Wu, Wu-Qiang; Di, Dawei; Zhao, Baodan; Tian, Jianjun; Wang, Zhijie; Yang, Yang; Chu, Liang; Yuan, Mingjian; Zeng, Haibo; Yip, Hin-Lap; Yan, Keyou; Xu, Wentao; Zhu, Lu; Zhang, Wenhua; Xing, Guichuan; Gao, Feng; Ding, Liming.
Afiliação
  • Zhang L; Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China.
  • Mei L; University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.
  • Wang K; School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, People's Republic of China.
  • Lv Y; Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen, 518055, People's Republic of China.
  • Zhang S; School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China.
  • Lian Y; School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China.
  • Liu X; College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China.
  • Ma Z; Department of Physics, Linköping University, 58183, Linköping, Sweden.
  • Xiao G; State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, People's Republic of China.
  • Liu Q; State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, People's Republic of China.
  • Zhai S; College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, People's Republic of China.
  • Zhang S; College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, People's Republic of China.
  • Liu G; School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China.
  • Yuan L; School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, People's Republic of China.
  • Guo B; School of Environment and Energy, South China University of Technology, Guangzhou, 510000, People's Republic of China.
  • Chen Z; College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China.
  • Wei K; Department of Chemistry, Imperial College London, London, W12 0BZ, UK.
  • Liu A; College of Chemistry, Nankai University, Tianjin, 300071, People's Republic of China.
  • Yue S; Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China.
  • Niu G; Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China.
  • Pan X; School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China.
  • Sun J; Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China.
  • Hua Y; University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.
  • Wu WQ; Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China.
  • Di D; University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.
  • Zhao B; School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China.
  • Tian J; School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, People's Republic of China.
  • Wang Z; College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China.
  • Yang Y; College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China.
  • Chu L; Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China.
  • Yuan M; Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China.
  • Zeng H; College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China.
  • Yip HL; School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, People's Republic of China.
  • Yan K; College of Chemistry, Nankai University, Tianjin, 300071, People's Republic of China.
  • Xu W; School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China.
  • Zhu L; Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, People's Republic of China.
  • Zhang W; School of Environment and Energy, South China University of Technology, Guangzhou, 510000, People's Republic of China.
  • Xing G; College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, People's Republic of China. wentao@nankai.edu.cn.
  • Gao F; School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, People's Republic of China. zhulu5@mail.sysu.edu.cn.
  • Ding L; School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China. wenhuazhang@ynu.edu.cn.
Nanomicro Lett ; 15(1): 177, 2023 Jul 10.
Article em En | MEDLINE | ID: mdl-37428261
ABSTRACT
Nowadays, the soar of photovoltaic performance of perovskite solar cells has set off a fever in the study of metal halide perovskite materials. The excellent optoelectronic properties and defect tolerance feature allow metal halide perovskite to be employed in a wide variety of applications. This article provides a holistic review over the current progress and future prospects of metal halide perovskite materials in representative promising applications, including traditional optoelectronic devices (solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices (artificial synapses and memristors) and pressure-induced emission. This review highlights the fundamentals, the current progress and the remaining challenges for each application, aiming to provide a comprehensive overview of the development status and a navigation of future research for metal halide perovskite materials and devices.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanomicro Lett Ano de publicação: 2023 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanomicro Lett Ano de publicação: 2023 Tipo de documento: Article