Change in Electrical/Mechanical Properties of Plasma Polymerized Low Dielectric Constant Films after Etching in CF<sub>4</sub>/O<sub>2</sub> Plasma for Semiconductor Multilevel Interconnects.

Baek, Namwuk; Park, Yoonsoo; Lim, Hyuna; Cha, Jihwan; Jang, Taesoon; Kang, Shinwon; Jang, Seonhee; Jung, Donggeun

Change in Electrical/Mechanical Properties of Plasma Polymerized Low Dielectric Constant Films after Etching in CF₄/O₂ Plasma for Semiconductor Multilevel Interconnects.

Baek, Namwuk; Park, Yoonsoo; Lim, Hyuna; Cha, Jihwan; Jang, Taesoon; Kang, Shinwon; Jang, Seonhee; Jung, Donggeun.

Afiliação

Baek N; Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Park Y; Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Lim H; Foundry Metal Technology Team, Samsung Electronics, 190 Seoku-dong, Hwaseong-si 18448, Republic of Korea.
Cha J; Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Jang T; Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Kang S; Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Jang S; Department of Mechanical Engineering, University of Louisiana at Lafayette, Lafayette, LA 70503, USA.
Jung D; Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea.

Materials (Basel) ; 16(13)2023 Jun 28.

Article em En | MEDLINE | ID: mdl-37444981

Palavras-chave

intermetal dielectric; low dielectric material; plasma-enhanced chemical-vapor deposition; reactive ion etching; tetrakis(trimethylsilyoxy)silane

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Materials (Basel) Ano de publicação: 2023 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Materials (Basel) Ano de publicação: 2023 Tipo de documento: Article