Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor.
Nanomaterials (Basel)
; 13(14)2023 Jul 22.
Article
em En
| MEDLINE
| ID: mdl-37513143
ABSTRACT
We used capacitance-voltage (C-V), conductance-voltage (G-V), and noise measurements to examine the carrier trap mechanisms at the surface/core of an AlGaN/GaN nanowire wrap-gate transistor (WGT). When the frequency is increased, the predicted surface trap density promptly drops, with values ranging from 9.1 × 1013 eV-1âcm-2 at 1 kHz to 1.2 × 1011 eV-1âcm-2 at 1 MHz. The power spectral density exhibits 1/f-noise behavior in the barrier accumulation area and rises with gate bias, according to the 1/f-noise features. At lower frequencies, the device exhibits 1/f-noise behavior, while beyond 1 kHz, it exhibits 1/f2-noise behavior. Additionally, when the fabricated device governs in the deep-subthreshold regime, the cutoff frequency for the 1/f2-noise features moves to the subordinated frequency (~102 Hz) side.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Nanomaterials (Basel)
Ano de publicação:
2023
Tipo de documento:
Article