Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs.
Micromachines (Basel)
; 14(8)2023 Jul 28.
Article
em En
| MEDLINE
| ID: mdl-37630050
ABSTRACT
We study how nitridation, applied to SiON gate layers, impacts the reliability of planar metal-oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive bias temperature instability (N/PBTI) as well as hard breakdown (HBD) characteristics of these devices. Experimental data demonstrate that p-channel transistors with SiON layers characterized by a higher nitrogen concentration have poorer NBTI reliability compared to their counterparts with a lower nitrogen content, while PBTI in n-channel devices is negligibly weak in all samples independently of the nitrogen concentration. The Weibull distribution of HBD fields extracted from experimental data in devices with a higher N density are shifted towards lower values with respect to that measured in MOSFETs, and SiON films have a lower nitrogen concentration. Based on these findings, we conclude that a higher nitrogen concentration results in the aggravation of BTI robustness and HBD characteristics.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Micromachines (Basel)
Ano de publicação:
2023
Tipo de documento:
Article
País de afiliação:
Bélgica