Three-dimensional vertical structural electrochemical random access memory for high-density integrated synapse device.

Kim, Hyejin; Seo, Jongseon; Cho, Seojin; Jeon, Seonuk; Woo, Jiyong; Lee, Daeseok

Kim, Hyejin; Seo, Jongseon; Cho, Seojin; Jeon, Seonuk; Woo, Jiyong; Lee, Daeseok.

Afiliação

Kim H; Department of Electronic Materials Engineering, Kwangwoon University, Seoul, 01897, Republic of Korea.
Seo J; Department of Electronic Materials Engineering, Kwangwoon University, Seoul, 01897, Republic of Korea.
Cho S; Department of Electronic Materials Engineering, Kwangwoon University, Seoul, 01897, Republic of Korea.
Jeon S; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, 41566, South Korea.
Woo J; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, 41566, South Korea.
Lee D; Department of Electronic Materials Engineering, Kwangwoon University, Seoul, 01897, Republic of Korea. leeds@kw.ac.kr.

Sci Rep ; 13(1): 14325, 2023 Aug 31.

Article em En | MEDLINE | ID: mdl-37652919

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Clinical_trials Idioma: En Revista: Sci Rep Ano de publicação: 2023 Tipo de documento: Article

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