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Strong In-Plane Optoelectronic Anisotropy and Polarization Sensitivity in Low-Symmetry 2D Violet Phosphorus.
Chen, Weilin; Chen, An; Zhang, Ruan; Zeng, Jianmin; Zhang, Lihui; Gu, Mengyue; Wang, Chaofan; Huang, Mingyuan; Guo, Yanbo; Duan, Hongxiao; Hu, Chunguang; Shen, Wanfu; Niu, Baoxin; Watanabe, Kenji; Taniguchi, Takashi; Zhang, Jinying; Li, Jinjin; Cai, Xinghan; Liu, Gang.
Afiliação
  • Chen W; National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
  • Chen A; Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
  • Zhang R; National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
  • Zeng J; Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
  • Zhang L; National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
  • Gu M; Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
  • Wang C; Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
  • Huang M; Xi'an Thermal Power Research Institute Co., Ltd., Xi'an 710054, People's Republic of China.
  • Guo Y; School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China.
  • Duan H; Department of Physics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, People's Republic of China.
  • Hu C; Department of Physics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, People's Republic of China.
  • Shen W; National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
  • Niu B; Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
  • Watanabe K; National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
  • Taniguchi T; Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
  • Zhang J; State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin 300072, People's Republic of China.
  • Li J; State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin 300072, People's Republic of China.
  • Cai X; State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin 300072, People's Republic of China.
  • Liu G; National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
Nano Lett ; 23(23): 10821-10831, 2023 Dec 13.
Article em En | MEDLINE | ID: mdl-38050812
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2023 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2023 Tipo de documento: Article