Facile synthesis ofß-Ga2O3based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides.

Feria, Denice Navat; Huang, Qi-Zhi; Yeh, Chun-Shao; Lin, Shi-Xian; Lin, Der-Yuh; Tseng, Bo-Chang; Lian, Jan-Tian; Lin, Tai-Yuan

Facile synthesis ofß-Ga₂O₃based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides.

Feria, Denice Navat; Huang, Qi-Zhi; Yeh, Chun-Shao; Lin, Shi-Xian; Lin, Der-Yuh; Tseng, Bo-Chang; Lian, Jan-Tian; Lin, Tai-Yuan.

Afiliação

Feria DN; Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan.
Huang QZ; Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan.
Yeh CS; Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan.
Lin SX; Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan.
Lin DY; Department of Electronic Engineering, National Changhua University of Education, Changhua, 500207, Taiwan.
Tseng BC; Graduate Institute of Photonics, National Changhua University of Education, Changhua, 500207, Taiwan.
Lian JT; Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan.
Lin TY; Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan.

Nanotechnology ; 35(12)2024 Jan 04.

Article em En | MEDLINE | ID: mdl-38064741

Palavras-chave

Baliga's figure of merit; mobility; percolation; thin film transistor; ß-Ga2O3

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2024 Tipo de documento: Article País de afiliação: Taiwan

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