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Effect of Donor Nb(V) Doping on the Surface Reactivity, Electrical, Optical and Photocatalytic Properties of Nanocrystalline TiO2.
Kuranov, Dmitriy; Grebenkina, Anastasia; Bogdanova, Alexandra; Platonov, Vadim; Polomoshnov, Sergey; Krivetskiy, Valeriy; Rumyantseva, Marina.
Afiliação
  • Kuranov D; Chemistry Department, Lomonosov Moscow State University, 119991 Moscow, Russia.
  • Grebenkina A; Scientific-Manufacturing Complex Technological Centre, 124498 Moscow, Russia.
  • Bogdanova A; Chemistry Department, Lomonosov Moscow State University, 119991 Moscow, Russia.
  • Platonov V; Chemistry Department, Lomonosov Moscow State University, 119991 Moscow, Russia.
  • Polomoshnov S; Chemistry Department, Lomonosov Moscow State University, 119991 Moscow, Russia.
  • Krivetskiy V; Scientific-Manufacturing Complex Technological Centre, 124498 Moscow, Russia.
  • Rumyantseva M; Chemistry Department, Lomonosov Moscow State University, 119991 Moscow, Russia.
Materials (Basel) ; 17(2)2024 Jan 11.
Article em En | MEDLINE | ID: mdl-38255544
ABSTRACT
In this work, we primarily aimed to study the Nb(V) doping effect on the surface activity and optical and electrical properties of nanocrystalline TiO2 obtained through flame-spray pyrolysis. Materials were characterized using X-ray diffraction, Raman spectroscopy and IR, UV and visible spectroscopy. The mechanism of surface reaction with acetone was studied using in situ DRIFTs. It was found that the TiO2-Nb-4 material demonstrated a higher conversion of acetone at a temperature of 300 °C than pure TiO2, which was due to the presence of more active forms of chemisorbed oxygen, as well as higher Lewis acidity of the surface. Conduction activation energies (Eact) were calculated for thin films based on TiO2-Nb materials. The results of the MB photobleaching experiment showed a non-monotonic change in the photocatalytic properties of materials with an increase in Nb(V) content, which was caused by a combination of factors, such as specific surface area, phase composition, concentration of charge carriers as well as their recombination due to lattice point defects.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Materials (Basel) Ano de publicação: 2024 Tipo de documento: Article País de afiliação: Federação Russa

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Materials (Basel) Ano de publicação: 2024 Tipo de documento: Article País de afiliação: Federação Russa