Molecular Beam Epitaxy of ß-(InxGa1-x)2O3 on ß-Ga2O3 (010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas Confinement.

ABSTRACT

In this work, we investigate the growth of monoclinic ß-(InxGa1-x)2O3 alloys on top of (010) ß-Ga2O3 substrates via plasma-assisted molecular beam epitaxy. In particular, using different in situ (reflection high-energy electron diffraction) and ex situ (atomic force microscopy, X-ray diffraction, time-of-flight secondary ion mass spectrometry, and transmission electron microscopy) characterization techniques, we discuss (i) the growth parameters that allow for In incorporation and (ii) the obtainable structural quality of the deposited layers as a function of the alloy composition. In particular, we give experimental evidence of the possibility of coherently growing (010) ß-(InxGa1-x)2O3 layers on ß-Ga2O3 with good structural quality for x up to ≈ 0.1. Moreover, we show that the monoclinic structure of the underlying (010) ß-Ga2O3 substrate can be preserved in the ß-(InxGa1-x)2O3 layers for wider concentrations of In (x ≤ 0.19). Nonetheless, the formation of a large amount of structural defects, like unexpected (102̅) oriented twin domains and partial segregation of In is suggested for x > 0.1. Strain relaxes anisotropically, maintaining an elastically strained unit cell along the a* direction vs plastic relaxation along the c* direction. This study provides important guidelines for the low-end side tunability of the energy bandgap of ß-Ga2O3-based alloys and provides an estimate of its potential in increasing the confined carrier concentration of two-dimensional electron gases in ß-(InxGa1-x)2O3/(AlyGa1-y)2O3 heterostructures.