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Constructing ZnTe Spherical Quantum Well for Efficient Light Emission.
Cao, Kequan; Yu, Binbin; Huang, Fei; Pan, Qinying; Wang, Junfeng; Ning, Jiajia; Zheng, Kaibo; Pullerits, Tõnu; Tian, Jianjun.
Afiliação
  • Cao K; Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China.
  • Yu B; Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China.
  • Huang F; Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China.
  • Pan Q; Chemical Physics and NanoLund, Lund University, 22100 Lund, Sweden.
  • Wang J; Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China.
  • Ning J; College of Physics, Jilin University, Changchun 130012, People's Republic of China.
  • Zheng K; Chemical Physics and NanoLund, Lund University, 22100 Lund, Sweden.
  • Pullerits T; Chemical Physics and NanoLund, Lund University, 22100 Lund, Sweden.
  • Tian J; Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China.
Nano Lett ; 24(17): 5238-5245, 2024 May 01.
Article em En | MEDLINE | ID: mdl-38629707
ABSTRACT
ZnTe colloidal semiconductor nanocrystals (NCs) have shown promise for light-emitting diodes (LEDs) and displays, because they are free from toxic heavy metals (Cd). However, so far, their low photoluminescence (PL) efficiency (∼30%) has hindered their applications. Herein, we devised a novel structure of ZnTe NCs with the configuration of ZnSe (core)/ZnTe (spherical quantum well, SQW)/ZnSe (shell). The inner layer ZnTe was grown at the surface of ZnSe core with avoiding using highly active and high-risk Zn sources. Due to the formation of coherently strained heterostructure which reduced the lattice mismatch, and the thermodynamic growth of ZnTe, the surface or interface defects were suppressed. A high PL efficiency of >60% was obtained for the green light-emitting ZnSe/ZnTe/ZnSe SQWs after ZnS outer layer passivation, which is the highest value for colloidal ZnTe-based NCs. This work paves the way for the development of novel semiconductor NCs for luminescent and display applications.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China