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Origin of the Efficiency Roll-off in Quantum Dot Light-Emitting Diodes: An Electrically Excited Transient Absorption Spectroscopy Study.
Li, Bo; Yan, Zhijie; Song, Jiaojiao; Gao, Yan; Wang, Lei; Yan, Xiaohan; Shen, Huaibin; Fan, Fengjia.
Afiliação
  • Li B; CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China.
  • Yan Z; Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China.
  • Song J; Anhui Province Key Laboratory of Scientific Instrument Development and Application, University of Science and Technology of China, Hefei 230026, China.
  • Gao Y; CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China.
  • Wang L; Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China.
  • Yan X; Anhui Province Key Laboratory of Scientific Instrument Development and Application, University of Science and Technology of China, Hefei 230026, China.
  • Shen H; Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, Kaifeng 475000, China.
  • Fan F; Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, Kaifeng 475000, China.
Nano Lett ; 24(34): 10650-10655, 2024 Aug 28.
Article em En | MEDLINE | ID: mdl-39158094
ABSTRACT
In situ characterizations of charge injection dynamics, equilibrated concentration, and electric field distributions shed light on the critical mechanisms of quantum dot light-emitting diodes (QD-LEDs). In this work, we developed electrically excited transient absorption spectroscopy, which can provide the above key information, to investigate the efficiency roll-off of QD-LEDs. We found that the average electron populations per QD are low when QD-LEDs exhibit efficiency roll-off, excluding Auger recombination as the main cause. We also revealed that the weak electrical field inside the QD layer under forward biases has a negligible impact on the efficiency. Interestingly, we found that as the voltage increases the electron concentration in the QD layer saturates at very low levels. When combined with the concomitant efficiency roll-off, we propose electron leakage is the main loss at elevated driving voltages. We further demonstrate that increasing the electron confinement potential with the ZnS shell enables us to efficiently mitigate the efficiency roll-off.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China