High-Performance Sliding Ferroelectric Transistor Based on Schottky Barrier Tuning.

Sliding ferroelectricity associated with interlayer translation is an excellent candidate for ferroelectric device miniaturization. However, the weak polarization gives rise to the poor performance of sliding ferroelectric transistors with a low on/off ratio and a narrow memory window, which restricts its practical application. To address the issue, we propose a facile strategy by regulating the Schottky barrier in sliding ferroelectric semiconductor transistors based on γ-InSe, in which a high performance with a large on/off ratio (106) and a wide memory window (4.5 V) was ultimately acquired. Additionally, the memory window of the device can be further modulated by electrostatic doping or light excitation. These results open up new ways for designing novel ferroelectric devices based on emerging sliding ferroelectricity.

Polybenzimidazole/Mxene composite membranes for intermediate temperature polymer electrolyte membrane fuel cells.

This report demonstrated the first study on the use of a new 2D nanomaterial (Mxene) for enhancing membrane performance of intermediate temperature (>100 °C) polymer electrolyte membrane fuel cells (ITPEMFCs). In this study, a typical Ti3C2T x -MXene was synthesized and incorporated into polybenzimidazole (PBI)-based membranes by using a solution blending method. The composite membrane with 3 wt% Ti3C2T x -MXene showed the proton conductivity more than 2 times higher than that of pristine PBI membrane at the temperature range of 100 °C-170 °C, and led to substantial increase in maximum power density of fuel cells by ∼30% tested at 150 °C. The addition of Ti3C2T x -MXene also improved the mechanical properties and thermal stability of PBI membranes. At 3 wt% Ti3C2T x -MXene, the elongation at break of phosphoric acid doped PBI remained unaffected at 150 °C, and the tensile strength and Young's modulus was increased by ∼150% and ∼160%, respectively. This study pointed out promising application of MXene in ITPEMFCs.

The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications.

In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by an external field, which has stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile and electrically switchable feature have exhibited enormous potential in controlling the electronic and optoelectronic properties of 2D materials, leading to an extremely fertile area of research. Here, we review the 2D materials and relevant devices integrated with ferroelectricity. This review starts to introduce the background about the concerned themes, namely 2D materials and ferroelectrics, and then presents the fundamental mechanisms, tuning strategies, as well as recent progress of the ferroelectric effect on the optical and electrical properties of 2D materials. Subsequently, the latest developments of 2D material-based electronic and optoelectronic devices integrated with ferroelectricity are summarized. Finally, the future outlook and challenges of this exciting field are suggested.

Developing fatigue-resistant ferroelectrics using interlayer sliding switching.

Ferroelectric materials have switchable electrical polarization that is appealing for high-density nonvolatile memories. However, inevitable fatigue hinders practical applications of these materials. Fatigue-free ferroelectric switching could dramatically improve the endurance of such devices. We report a fatigue-free ferroelectric system based on the sliding ferroelectricity of bilayer 3R molybdenum disulfide (3R-MoS2). The memory performance of this ferroelectric device does not show the wake-up effect at low cycles or a substantial fatigue effect after 106 switching cycles under different pulse widths. The total stress time of the device under an electric field is up to 105 s, which is long relative to other devices. Our theoretical calculations reveal that the fatigue-free feature of sliding ferroelectricity is due to the immobile charge defects in sliding ferroelectricity.

Recent progress in the synthesis of novel two-dimensional van der Waals materials.

The last decade has witnessed the significant progress of physical fundamental research and great success of practical application in two-dimensional (2D) van der Waals (vdW) materials since the discovery of graphene in 2004. To date, vdW materials is still a vibrant and fast-expanding field, where tremendous reports have been published covering topics from cutting-edge quantum technology to urgent green energy, and so on. Here, we briefly review the emerging hot physical topics and intriguing materials, such as 2D topological materials, piezoelectric materials, ferroelectric materials, magnetic materials and twistronic heterostructures. Then, various vdW material synthetic strategies are discussed in detail, concerning the growth mechanisms, preparation conditions and typical examples. Finally, prospects and further opportunities in the booming field of 2D materials are addressed.

Sliding induced multiple polarization states in two-dimensional ferroelectrics.

When the atomic layers in a non-centrosymmetric van der Waals structure slide against each other, the interfacial charge transfer results in a reversal of the structure's spontaneous polarization. This phenomenon is known as sliding ferroelectricity and it is markedly different from conventional ferroelectric switching mechanisms relying on ion displacement. Here, we present layer dependence as a new dimension to control sliding ferroelectricity. By fabricating 3 R MoS2 of various thicknesses into dual-gate field-effect transistors, we obtain anomalous intermediate polarization states in multilayer (more than bilayer) 3 R MoS2. Using results from ab initio density functional theory calculations, we propose a generalized model to describe the ferroelectric switching process in multilayer 3 R MoS2 and to explain the formation of these intermediate polarization states. This work reveals the critical roles layer number and interlayer dipole coupling play in sliding ferroelectricity and presents a new strategy for the design of novel sliding ferroelectric devices.

Mimicking Neuroplasticity via Ion Migration in van der Waals Layered Copper Indium Thiophosphate.

Artificial synaptic devices are the essential components of neuromorphic computing systems, which are capable of parallel information storage and processing with high area and energy efficiencies, showing high promise in future storage systems and in-memory computing. Analogous to the diffusion of neurotransmitter between neurons, ion-migration-based synaptic devices are becoming promising for mimicking synaptic plasticity, though the precise control of ion migration is still challenging. Due to the unique 2D nature and highly anisotropic ionic transport properties, van der Waals layered materials are attractive for synaptic device applications. Here, utilizing the high conductivity from Cu+ -ion migration, a two-terminal artificial synaptic device based on layered copper indium thiophosphate is studied. By controlling the migration of Cu+ ions with an electric field, the device mimics various neuroplasticity functions, such as short-term plasticity, long-term plasticity, and spike-time-dependent plasticity. The Pavlovian conditioning and activity-dependent synaptic plasticity involved neural functions are also successfully emulated. These results show a promising opportunity to modulate ion migration in 2D materials through field-driven ionic processes, making the demonstrated synaptic device an intriguing candidate for future low-power neuromorphic applications.

A flexible SERS-active film for studying the effect of non-metallic nanostructures on Raman enhancement.

Since the discovery of surface enhanced Raman scattering (SERS), the choice of SERS-active materials has been limited mainly to metals, especially gold and silver in the visible spectrum. Although non-metals can also be SERS-active by forming nanostructures or composite structures with SERS-active materials, the mechanism behind it is still unclear and there is no perfect technique to study it. In this work, by constructing a SERS structure on a flexible polydimethylsiloxane film, we provide a way to study the effect of non-metallic nanostructures on Raman enhancement by attaching the above film onto flat and nanostructured surfaces. It was found that a nanoporous silicon surface contributes to an additional, up to five times, Raman enhancement. The pore depth and pore size also influence the observed Raman enhancement. These findings will help us not only to understand the mechanism of SERS involving non-metallic nanostructures, but also to design more efficient SERS structures for various applications.

3D assembly of Ti3C2-MXene directed by water/oil interfaces.

MXene is an emerging class of 2D materials exfoliated from ternary carbide and nitride ceramics. The exfoliation process, which is an acid etching approach, functionalizes the MXene surface with -OH, -O and -F groups. These functional groups offer significant opportunities for tuning the colloidal properties of the MXene nanoblocks; importantly, this tunability points the way towards a facile route for assembling these nanoblocks into 3D architectures that are in demand for many applications. This route, presented for the first time here, uses water/oil interfaces for assembling Ti3C2-MXene in 3D architectures. It shows that cetyl trimethylammonium bromide (CTAB) can be used to tune the hydrophilic-hydrophobic balance of Ti3C2-MXene via the interaction of positively charged -N(CH3)3 and -O groups on the MXene surface. Crucially, it is found that this interaction can be controlled via the hydrogen ion concentration in the aqueous phase. Stable oil-in-water emulsions are the only product when the aqueous phase is neutral or basic. This understanding led us to fabricate a high internal phase Pickering emulsion with more than 70 vol% oil droplets and also a solid porous monolith based on this emulsion template.