RESUMEN
We optimize various gate head structures to improve breakdown voltage characteristics of AlGaN/GaN high-electron mobility transistors by a two-dimensional device simulator based on a T-shaped gate-connected field-plate. Field-plates (FPs) alleviate electric field spikes near the gate and drain-side overlapping edges, which eventually disperse electron avalanche and charge trapping effects. Hence, the more uniform electric field distribution provides improved breakdown voltage of the device. Multiple configurations, such as extension of the FP towards the source or drain, and symmetric extension, were investigated and compared. The best results were acquired when the FP was extended towards the drain, with an optimum length of 2 µm, which produced maximum breakdown voltage of 224 V and maximum transconductance of 132.5 mS/mm. Also, the optimum Si3N4 passivation layer thickness based on a T-shaped gate-connected FP structure was 50 nm.
RESUMEN
We proffer NH4OH-oriented and pH-dependent growth of ZnO nanostructures via a microwaveassisted growth method. The fabrication of ZnO nanorods (ZNRs), nanoflowers (ZNFs), nanostars (ZNSs), and nanotetrapods (ZNTs) is presented. NH4OH was used as a mineralizer to change the solution pH for nanostructure growth, where temperature and other variables were fixed. Because of an efficient heat transfer and facile growth of nanostructures, a domestic microwave oven was used to facilitate the nanostructure growth in the span of just 10-15 min. The results showed that the growth of ZnO nanostructures was dependent upon the number of growth units and ZnO nuclei present in the solution, which ultimately depend upon the pH of the solution. At the outset, without the addition of NH4OH, the pH of the solution was ~6.8 and the ZNRs were formed in the solution or on a seeded substrate which persisted in the pH range of ~6.8-9. An abrupt change in the shapes and the types of the nanostructures was observed when the pH was boosted beyond 10. A transition from ZNRs to ZNFs was observed at pH 10 and ZNFs were formed at pH 11. The solution gave birth to ZNSs and ZNTs when the pH was further raised to 12 and 13, respectively.
RESUMEN
In this study, we consider the relationship between the temperature in a two-dimensional electron gas (2-DEG) channel layer and the RF characteristics of an AlGaN/GaN high-electron-mobility transistor by changing the geometrical structure of the field-plate. The final goal is to achieve a high power efficiency by decreasing the channel layer temperature. First, simulations were performed to compare and contrast the experimental data of a conventional T-gate head structure. Then, a source-bridged field-plate (SBFP) structure was used to obtain the lower junction temperature in the 2-DEG channel layer. The peak electric field intensity was reduced, and a decrease in channel temperature resulted in an increase in electron mobility. Furthermore, the gate-to-source capacitance was increased by the SBFP structure. However, under the large current flow condition, the SBFP structure had a lower maximum temperature than the basic T-gate head structure, which improved the device electron mobility. Eventually, an optimum position of the SBFP was used, which led to higher frequency responses and improved the breakdown voltages. Hence, the optimized SBFP structure can be a promising candidate for high-power RF devices.