Low temperature SiC die-attach bonding technology by hillocks generation on Al sheet surface with stress self-generation and self-release.

This paper introduced an approach of die-attach bonding technology based on a low-cost high-purity aluminum (99.99%) sheet in a silicon carbide (SiC)/direct bonded aluminum (DBA) power module. Both sides of an Al sheet were sputtered by a thin Ti and Ag layer, which generated a tensile stress of 166 MPa on the Al surface. After heating, the Al surface displayed a large quantity of Ag hillocks by stress self-release due to the coefficient of thermal expansion (CTE) mismatch among Al, Ti, and Ag. The SiC/Al sheet/DBA substrate interfaces were bridged by the generation of these hillocks, which correspond to a robust shear strength of 33.4 MPa in a low-temperature process. Hillocks generation and the interface bonding mechanism by surface stress self-generation and self-release were systematically analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD), and transmission electron microscopy (TEM). The shear strength remains constant at 32.1 MPa after high-temperature storage at 250 °C for 500 h, which suggests that the Al sheet possesses excellent high-heat resistance and thermal stability. This novel approach of die-attach bonding technology serves as an attractive alternative for SiC power devices that require high-temperature performance.

Measurement of Heat Dissipation and Thermal-Stability of Power Modules on DBC Substrates with Various Ceramics by SiC Micro-Heater Chip System and Ag Sinter Joining.

This study introduced the SiC micro-heater chip as a novel thermal evaluation device for next-generation power modules and to evaluate the heat resistant performance of direct bonded copper (DBC) substrate with aluminum nitride (AlN-DBC), aluminum oxide (DBC-Al2O3) and silicon nitride (Si3N4-DBC) ceramics middle layer. The SiC micro-heater chips were structurally sound bonded on the two types of DBC substrates by Ag sinter paste and Au wire was used to interconnect the SiC and DBC substrate. The SiC micro-heater chip power modules were fixed on a water-cooling plate by a thermal interface material (TIM), a steady-state thermal resistance measurement and a power cycling test were successfully conducted. As a result, the thermal resistance of the SiC micro-heater chip power modules on the DBC-Al2O3 substrate at power over 200 W was about twice higher than DBC-Si3N4 and also higher than DBC-AlN. In addition, during the power cycle test, DBC-Al2O3 was stopped after 1000 cycles due to Pt heater pattern line was partially broken induced by the excessive rise in thermal resistance, but DBC-Si3N4 and DBC-AlN specimens were subjected to more than 20,000 cycles and not noticeable physical failure was found in both of the SiC chip and DBC substrates by a x-ray observation. The results indicated that AlN-DBC can be as an optimization substrate for the best heat dissipation/durability in wide band-gap (WBG) power devices. Our results provide an important index for industries demanding higher power and temperature power electronics.

Alloying and Embedding of Cu-Core/Ag-Shell Nanowires for Ultrastable Stretchable and Transparent Electrodes.

In this paper, transparent electrodes with dense Cu@Ag alloy nanowires embedded in the stretchable substrates are successfully fabricated by a high-intensity pulsed light (HIPL) technique within one step. The intense light energy not only induces rapid mutual dissolution between the Cu core and the Ag shell to form dense Cu@Ag alloy nanowires but also embeds the newly formed alloy nanowires into the stretchable substrates. The combination of alloy nanowires and embedded structures greatly improve the thermal stability of the transparent electrodes that maintain a high conductivity unchanged in both high temperature (140 °C) and high humidity (85 °C, 85% RH) for at least 500 h, which is much better than previous reports. The transparent electrodes also exhibit high electromechanical stability due to the strong adhesion between alloy nanowires and substrates, which remain stable after 1000 stretching-relaxation cycles at 30% strain. Stretchable and transparent heaters based on the alloyed and embedded electrodes have a wide outputting temperature range (up to 130 °C) and show excellent thermal stability and stretchability (up to 60% strain) due to the alloy nanowires and embedded structures. To sum up, this study proposes the combination of alloying and embedding structures to greatly improve the stability of Cu nanowire-based stretchable transparent electrodes, showing a huge application prospect in the field of stretchable and wearable electronics.

Thermal Shock Performance of DBA/AMB Substrates Plated by Ni and Ni⁻P Layers for High-Temperature Applications of Power Device Modules.

The thermal cycling life of direct bonded aluminum (DBA) and active metal brazing (AMB) substrates with two types of plating-Ni electroplating and Ni⁻P electroless plating-was evaluated by thermal shock tests between -50 and 250 °C. AMB substrates with Al2O3 and AlN fractured only after 10 cycles, but with Si3N4 ceramic, they retained good thermal stability even beyond 1000 cycles, regardless of the metallization type. The Ni layer on the surviving AMB substrates with Si3N4 was not damaged, while a crack occurred in the Ni⁻P layer. For DBA substrates, fracture did not occur up to 1000 cycles for all kind of ceramics. On the other hand, the Ni⁻P layer was roughened and cracked according to the severe deformation of the aluminum layer, while the Ni layer was not damaged after thermal shock tests. In addition, the deformation mechanism of an Al plate on a ceramic substrate was investigated both by microstructural observation and finite element method (FEM) simulation, which confirmed that grain boundary sliding was a key factor in the severe deformation of the Al layer that resulted in the cracking of the Ni⁻P layer. The fracture suppression in the Ni layer on DBA/AMB substrates can be attributed to its ductility and higher strength compared with those of Ni⁻P plating.

Printable and Flexible Copper-Silver Alloy Electrodes with High Conductivity and Ultrahigh Oxidation Resistance.

Printable and flexible Cu-Ag alloy electrodes with high conductivity and ultrahigh oxidation resistance have been successfully fabricated by using a newly developed Cu-Ag hybrid ink and a simple fabrication process consisting of low-temperature precuring followed by rapid photonic sintering (LTRS). A special Ag nanoparticle shell on a Cu core structure is first created in situ by low-temperature precuring. An instantaneous photonic sintering can induce rapid mutual dissolution between the Cu core and the Ag nanoparticle shell so that core-shell structures consisting of a Cu-rich phase in the core and a Ag-rich phase in the shell (Cu-Ag alloy) can be obtained on flexible substrates. The resulting Cu-Ag alloy electrode has high conductivity (3.4 µΩ·cm) and ultrahigh oxidation resistance even up to 180 °C in an air atmosphere; this approach shows huge potential and is a tempting prospect for the fabrication of highly reliable and cost-effective printed electronic devices.