Observation of the Superstructure in Fe5-xGeTe2 by X-ray Fluorescence Holography.

Fe5-xGeTe2 is a two-dimensional van der Waals material that exhibits ferromagnetic order with a high Curie temperature (TC) of around room temperature. In addition to TC, two magnetic transitions occur with decreasing temperature, and a charge-ordered state is observed at low temperatures. We employed Ge Kα X-ray fluorescence holography (XFH) for Fe5-xGeTe2 to directly investigate the local structure in the charge-ordered state, i.e., the 3×3 superstructure. The Ge Kα XFH results revealed local atomic structures around the Ge atom, thus clarifying the simultaneous locations and arrangements of the Te, Fe, and Ge atoms. The atomic positions relative to the Ge atom are useful for understanding the coexistence of the ideal 1 × 1 structure and 3×3 superstructure found in the charge-ordered state.

Pressure Dependence of the Structural and Superconducting Properties of the Bi-Based Superconductor Bi2Pd3Se2.

The structural and superconducting properties of the Bi-based compound Bi2Pd3Se2 were investigated over a wide pressure range. The prepared Bi2Pd3Se2 sample was a superconductor with a superconducting transition temperature, Tc, of approximately 3.0 K, which differed from a previous report (Tc of less than 1.0 K). At ambient pressure, the powder X-ray diffraction (XRD) pattern of the Bi2Pd3Se2 sample was consistent with that previously reported for Bi2Pd3Se2. The Rietveld method was used to refine the crystal structure, which had a space group of C2/m (No. 12), as reported previously. This compound showed no clear anomaly due to the charge-density-wave (CDW) transition, as seen from the temperature dependence of magnetic susceptibility. However, the temperature dependence of electrical resistivity indicated a clear anomaly, presumably because of the CDW transition in the low-pressure range; the CDW transition temperature was approximately 230 K. The XRD patterns of the Bi2Pd3Se2 sample were measured at 0.160-22.7 GPa, and the patterns were well analyzed by both the Le Bail and Rietveld refinement methods, showing no structural phase transitions in the above pressure range. The pressure dependence of Tc of Bi2Pd3Se2 was recorded based on the temperature dependence of the electrical resistance, which showed an almost constant Tc at 0-13.7 GPa, and the Tc-pressure (p) behavior was fully discussed.

Pressure Dependence of Superconductivity in a Charge-Density-Wave Superconductor Bi2Rh3Se2.

The structural and superconducting properties of a Bi-based compound, Bi2Rh3Se2, are investigated over a wide pressure range. Bi2Rh3Se2 is a superconductor with a superconducting transition temperature, Tc, of 0.7 K. This compound is in a charge-density-wave (CDW) state below 240 K, which implies the coexistence of superconducting and CDW states at low temperatures. Here, the superconducting properties of Bi2Rh3Se2 are studied from the perspective of the temperature dependence of electrical resistance (R) at high pressures (p's). The pressure dependence of Tc of Bi2Rh3Se2 shows a slow increase in Tc at 0-15.5 GPa, and the Tc slowly decreases with pressure above 15.5 GPa, which is markedly different from that of normal superconductors because the value of Tc should simply decrease owing to the decrease in density of states (DOS) on the Fermi level, N(εF), driven by a simple shrinkage of the lattice under pressure. To ascertain the origin of such a dome-like Tc-p behavior, the crystal structure of Bi2Rh3Se2 was explored over a wide pressure range of 0-20 GPa on the basis of powder X-ray diffraction; no structural phase transitions or simple shrinkage of the lattice was observed. This result implies that the increase in Tc against pressure cannot simply be explained from a structural point of view. In other words, a direct relation between superconductivity and crystal structure was not found. On the other hand, the CDW transition became ambiguous at pressures higher than 3.8 GPa, suggesting that the Tc had been suppressed by the CDW transition in a low pressure range. Thus, the findings suggest that for Bi2Rh3Se2, Tc is enhanced through the suppression of CDW transition, which may be reasonable because the CDW-ordered state restrains the charge fluctuation to weaken the electron-phonon coupling and opens the gap to decrease the density of states on the Fermi level. The obtained dome-like Tc-p behavior indicates the possibility of Bi2Rh3Se2 being an exotic superconductor.

Structural Characterization of Graphite Analogue BCx Synthesized Under Various Conditions and Its Application to Ti Intercalation.

A graphite-like material boron carbide (BCx) was synthesized under various heat treatment conditions and extensively characterized. First, we synthesized the BCx precursor phase by a single-step reaction using a mixed solution of BBr3 and C6H6. We confirmed that the precursor phase had a graphite-like structure with B-C chemical bonds, but its crystallinity was poor. To improve their crystallinity, we annealed the precursor sample at high temperature using a high-frequency furnace and determined the annealing condition. We also investigated the magnetic properties of BCx. The high-temperature annealing for the precursor phase yields the highest Pauli paramagnetic susceptibility χPauli, indicating the highest density of states at the Fermi level. Accordingly, the high-temperature treatment for the precursor phase is significant to improve its crystallinity and physical properties. In addition, we synthesized a Ti-intercalated material TiBC by using the same procedure as that for making the BCx precursor phase. The crystal structure can be indexed by the AlB2 structure, indicating that Ti atoms are intercalated between the BC layers. The χPauli value of TiBC is obtained to be 1 order of magnitude smaller than that of BCx, suggesting the compensation of hole carriers by electron doping through Ti intercalation into the BCx system.

Superconducting Behavior of BaTi2(Sb1-yBiy)2O under Pressure.

The crystal structure and superconducting properties of a new type of titanium-pnictide superconductor, BaTi2(Sb1-yBiy)2O (y = 0.2, 0.5, and 0.8), are comprehensively investigated over a wide pressure range to elucidate the effect of substituting Bi for Sb on the superconducting behavior. The behavior of superconducting properties under pressure changes drastically with y, as expected from the double-dome Tc-y phase diagram obtained at ambient pressure. In this study, three BaTi2(Sb1-yBiy)2O samples (y = 0.2, 0.5, and 0.8) are considered, which correspond to the first superconducting dome, nonsuperconducting part, and second superconducting dome, respectively, in the Tc-y phase diagram. The crystal of BaTi2(Sb1-yBiy)2O with y = 0.2 shows a clear collapse transition, i.e., a drastic shrinkage of the lattice constant c at ca. 5 GPa. Strictly speaking, the collapsed crystal phase coexists with the noncollapsed phase above 5 GPa. On the other hand, BaTi2(Sb1-yBiy)2O with y = 0.8 shows a continuous change in the crystal lattice with pressure, i.e., no collapse transitions. The pressure dependence of Tc for BaTi2(Sb1-yBiy)2O with y = 0.2 shows a drastic increase in Tc at approximately 5 GPa, where the collapse transition occurs, indicating a clear pressure-induced superconducting phase transition related to the collapse transition. The value of Tc for BaTi2(Sb1-yBiy)2O with y = 0.8 increases slightly up to ∼2 GPa and is almost constant at 2-13 GPa. It is found that the superconducting behavior under pressure can be unambiguously classified by y based on the double-dome Tc-y phase diagram, indicative of distinguishable superconducting features at different y values. In this study, we comprehensively discuss the superconducting properties of the exotic material, BaTi2(Sb1-yBiy)2O, with a double-dome Tc-y phase diagram.

Pressure dependence of superconductivity in alkali-Bi compounds KBi2 and RbBi2.

The structural and superconducting properties of alkali-Bi-based compounds, KBi2 and RbBi2, were investigated over a wide pressure range for the first time. The samples of KBi2 and RbBi2 were prepared using a liquid ammonia (NH3) technique, and demonstrated superconductivity with superconducting transition temperatures, Tc, of 3.50 and 4.21 K at ambient pressure, respectively. The onset superconducting transition temperature, Tconset, of KBi2 decreased slightly; however, it suddenly jumped at 2 GPa and increased gradually with pressure, indicating the presence of two superconducting phases in the low-pressure range. The pressure-dependent X-ray diffraction patterns indicate that the KBi2 sample decomposed into KBi and Bi at pressures higher than 2.5 GPa. Moreover, a discontinuous change in Tconset was observed for KBi2 at 9 GPa, which reflects the decomposition of KBi2 into KBi and Bi. By contrast, the value of Tconset of RbBi2 was almost constant over a pressure range of 0-8 GPa. Thus, the superconducting properties and stability of alkali-Bi-based compounds against pressure were comprehensively explored in this study. In addition, the superconducting Cooper pair symmetry was investigated from the magnetic field dependence of Tc of KBi2 at 0.790 and 2.32 GPa, and of RbBi2 at 1.17 GPa, indicating the exact deviation from the simple s-wave paring model, which may be due to the complex electronic structure of Bi. The results elucidated the exotic superconducting properties of KBi2 and RbBi2 based on the pressure and magnetic field dependence of Tc and verified the chemical stability of KBi2 under pressure.

Emergence of a Pressure-Driven Superconducting Phase in Ba0.77Na0.23Ti2Sb2O.

We investigated the pressure dependence of electric transport in a superconducting sample, Ba0.77Na0.23Ti2Sb2O, to complete the phase diagram of superconducting transition temperature (Tc) against pressure (p). This superconducting sample exhibits a Tc value of 5.8 K at ambient pressure. Here, the superconductivity of the recently reported sample was investigated over a wide pressure range. The Tc value monotonously decreased with pressure below 8 GPa. Interestingly, the Tc value rapidly increased above 8 GPa and slowly declined with pressure above 11 GPa. Thus, a new superconducting phase was discovered above ∼9 GPa. The crystal structure of Ba0.77Na0.23Ti2Sb2O was also elucidated at 0-22.0 GPa with synchrotron X-ray powder diffraction. Consequently, an evident relation between the crystal structure and the superconductivity was revealed, namely, a clear structural phase transition was observed at 8-11 GPa, where the Tc value rapidly increased against pressure. This study provides detailed information on the superconductivity of Ba0.77Na0.23Ti2Sb2O under pressure, which will lead to a comprehensive understanding of pressure-driven superconductivity.

Superconducting properties of BaBi3 at ambient and high pressures.

Herein, we report the preparation and characterization of BaBi3 clarified by DC magnetic susceptibility, powder X-ray diffraction (XRD), and electrical transport. The superconducting properties of BaBi3 were elucidated through the magnetic and electrical transport properties in a wide pressure range. The superconducting transition temperature, Tc, showed a slight decrease (or almost constant Tc) against pressure up to 17.2 GPa. The values of the upper critical field, Hc2, at 0 K, were determined to be 1.27 T at 0 GPa and 3.11 T at 2.30 GPa, using the formula, because p-wave pairing appeared to occur for this material at both pressures, indicating the unconventionality of superconductivity. This result appears to be consistent with the topological non-trivial nature of superconductivity predicted theoretically. The pressure-dependent XRD patterns measured at 0-20.1 GPa indicated no structural phase transitions up to 20.1 GPa, i.e., the structural phase transitions from the α phase to the ß or γ phase which are induced by an application of pressure were not observed, contrary to the previous report, demonstrating that the α phase is maintained over the entire pressure range. Admittedly, the lattice constants and the volume of the unit cell, V, steadily decrease with increasing pressure up to 20.1 GPa. In this study, the plots of Tcversus p and V versus p of BaBi3 are depicted over a wide pressure range for the first time.

Superconducting behavior of BaTi2Bi2O and its pressure dependence.

A new superconducting sample, BaTi2Bi2O, was synthesized and characterized over a wide pressure range. The superconducting transition temperature, Tc, of BaTi2Bi2O was 4.33 K at ambient pressure. The crystal structure was tetragonal (space group of P4/mmm (No. 123)), according to the X-ray diffraction (XRD) pattern at ambient pressure. The XRD pattern was analyzed using the Le Bail method. The magnetic-field dependence of the magnetization at different temperatures was precisely investigated to elucidate the characteristics of the superconductivity. The pressure-dependent XRD patterns showed absence of structural phase transitions up to 19.8 GPa. The superconducting properties of BaTi2Bi2O were investigated under pressure. Tc monotonously increased with the pressure (p) up to 4.0 GPa and saturated above 4.0 GPa. The variations in the Tc-p plot were thoroughly analyzed. The Cooper pair symmetry (or superconducting pairing mechanism) was analyzed based on the magnetic field dependence of the superconductivity at ambient and high pressures, which indicated a sign of p-wave pairing for the superconductivity of BaTi2Bi2O, i.e., topologically nontrivial sign was suggested for BaTi2Bi2O.

Development of a single-shot CCD-based data acquisition system for time-resolved X-ray photoelectron spectroscopy at an X-ray free-electron laser facility.

In order to utilize high-brilliance photon sources, such as X-ray free-electron lasers (XFELs), for advanced time-resolved photoelectron spectroscopy (TR-PES), a single-shot CCD-based data acquisition system combined with a high-resolution hemispherical electron energy analyzer has been developed. The system's design enables it to be controlled by an external trigger signal for single-shot pump-probe-type TR-PES. The basic performance of the system is demonstrated with an offline test, followed by online core-level photoelectron and Auger electron spectroscopy in 'single-shot image', 'shot-to-shot image (image-to-image storage or block storage)' and `shot-to-shot sweep' modes at soft X-ray undulator beamline BL17SU of SPring-8. In the offline test the typical repetition rate for image-to-image storage mode has been confirmed to be about 15 Hz using a conventional pulse-generator. The function for correcting the shot-to-shot intensity fluctuations of the exciting photon beam, an important requirement for the TR-PES experiments at FEL sources, has been successfully tested at BL17SU by measuring Au 4f photoelectrons with intentionally controlled photon flux. The system has also been applied to hard X-ray PES (HAXPES) in `ordinary sweep' mode as well as shot-to-shot image mode at the 27 m-long undulator beamline BL19LXU of SPring-8 and also at the SACLA XFEL facility. The XFEL-induced Ti 1s core-level spectrum of La-doped SrTiO3 is reported as a function of incident power density. The Ti 1s core-level spectrum obtained at low power density is consistent with the spectrum obtained using the synchrotron source. At high power densities the Ti 1s core-level spectra show space-charge effects which are analysed using a known mean-field model for ultrafast electron packet propagation. The results successfully confirm the capability of the present data acquisition system for carrying out the core-level HAXPES studies of condensed matter induced by the XFEL.

Parity effects in few-layer graphene.

We study the electronic properties in few-layer graphenes (FLGs) classified by even/odd layer number n. FLGs with even n have only parabolic energy dispersions, whereas FLGs with odd n have a linear dispersion besides parabolic ones. This difference leads to a distinct density of states in FLGs, experimentally confirmed by the gate-voltage dependence of the electric double-layer capacitance. Thus, FLGs with odd n are unique materials that have relativistic carriers originating in linear energy dispersion.

Edge-dependent transport properties in graphene.

Graphene has two kinds of edges which have different electronic properties. A singular electronic state emerges at zigzag edges, while it disappears at armchair edges. We study the edge-dependent transport properties in few-layer graphene by applying a side gate voltage to the edge with an ionic liquid. The devices indicating a conductance peak at the charge neutrality point have zigzag edges, confirmed by micro-Raman spectroscopy mapping. The hopping transport between zigzag edges increases the conductance.

Superstructure of Fe5-xGeTe2 Determined by Te K-Edge Extended X-ray Absorption Fine Structure and Te Kα X-ray Fluorescence Holography.

The local structure of the two-dimensional van der Waals material, Fe5-xGeTe2, which exhibits unique structural/magnetic phase transitions, was investigated by Te K-edge extended X-ray absorption fine structure (EXAFS) and Te Kα X-ray fluorescence holography (XFH) over a wide temperature range. The formation of a trimer of Te atoms at low temperatures has been fully explored using these methods. An increase in the Te-Fe distance at approximately 150 K was suggested by EXAFS and presumably indicates the formation of a Te trimer. Moreover, XFH displayed clear atomic images of Te atoms. Additionally, the distance between the Te atoms shortened, as confirmed from the atomic images reconstructed from XFH, indicating the formation of a trimer of Te atoms, i.e., a charge-ordered superstructure. Furthermore, Te Kα XFH provided unambiguous atomic images of Fe atoms occupying the Fe1 site; the images were not clearly observed in the Ge Kα XFH that was previously reported because of the low occupancy of Fe and Ge atoms. In this study, EXAFS and XFH clearly showed the local structure around the Te atom; in particular, the formation of Te trimers caused by charge-ordered phase transitions was clearly confirmed. The charge-ordered phase transition is fully discussed based on the structural variation at low temperatures, as established from EXAFS and XFH.

Fabrication of high performance/highly functional field-effect transistor devices based on [6]phenacene thin films.

Field-effect transistors (FETs) based on [6]phenacene thin films were fabricated with SiO2 and parylene gate dielectrics. These FET devices exhibit field-effect mobility in the saturation regime as high as 7.4 cm(2) V(-1) s(-1), which is one of the highest reported values for organic thin-film FETs. The two- and four-probe mobilities in the linear regime display nearly similar values, suggesting negligible contact resistance at 300 K. FET characteristics were investigated using two-probe and four-probe measurement modes at 50-300 K. The two-probe mobility of the saturation regime can be explained by the multiple shallow trap and release model, while the intrinsic mobility obtained by the four-probe measurement in the linear regime is better explained by the phenomenon of transport with charge carrier scattering at low temperatures. The FET device fabricated with a parylene gate dielectric on polyethylene terephthalate possesses both transparency and flexibility, implying feasibility of practical application of [6]phenacene FETs in flexible/transparent electronics. N-channel FET characteristics were also achieved in the [6]phenacene thin-film FETs using metals that possess a small work function for use as source/drain electrodes.

Semiconductor-metal transition in Bi2Se3 caused by impurity doping.

Doping a typical topological insulator, Bi2Se3, with Ag impurity causes a semiconductor-metal (S-M) transition at 35 K. To deepen the understanding of this phenomenon, structural and transport properties of Ag-doped Bi2Se3 were studied. Single-crystal X-ray diffraction (SC-XRD) showed no structural transitions but slight shrinkage of the lattice, indicating no structural origin of the transition. To better understand electronic properties of Ag-doped Bi2Se3, extended analyses of Hall effect and electric-field effect were carried out. Hall effect measurements revealed that the reduction of resistance was accompanied by increases in not only carrier density but carrier mobility. The field-effect mobility is different for positive and negative gate voltages, indicating that the EF is located at around the bottom of the bulk conduction band (BCB) and that the carrier mobility in the bulk is larger than that at the bottom surface at all temperatures. The pinning of the EF at the BCB is found to be a key issue to induce the S-M transition, because the transition can be caused by depinning of the EF or the crossover between the bulk and the top surface transport.

Evaluation of Effective Field-Effect Mobility in Thin-Film and Single-Crystal Transistors for Revisiting Various Phenacene-Type Molecules.

The magnitude of the field-effect mobility µ of organic thin-film and single-crystal field-effect transistors (FETs) has been overestimated in certain recent studies. These reports set alarm bells ringing in the research field of organic electronics. Herein, we report a precise evaluation of the µ values using the effective field-effect mobility, µeff, a new indicator that is recently designed to prevent the FET performance of thin-film and single-crystal FETs based on various phenacene molecules from being overestimated. The transfer curves of a range of FETs based on phenacene are carefully categorized on the basis of a previous report. The exact evaluation of the value of µeff depends on the exact classification of each transfer curve. The transfer curves of all our phenacene FETs could be successfully classified based on the method indicated in the aforementioned report, which made it possible to evaluate the exact value of µeff for each FET. The FET performance based on the values of µeff obtained in this study is discussed in detail. In particular, the µeff values of single-crystal FETs are almost consistent with the µ values that were reported previously, but the µeff values of thin-film FETs were much lower than those previously reported for µ, owing to a high absolute threshold voltage, |V th|. The increase in the field-effect mobility as a function of the number of benzene rings, which was previously demonstrated based on the µ values of single-crystal FETs with phenacene molecules, is well reproduced from the µeff values. The FET performance is discussed based on the newly evaluated µeff values, and the future prospects of using phenacene molecules in FET devices are demonstrated.

Metal-intercalated aromatic hydrocarbons: a new class of carbon-based superconductors.

New carbon-based superconductors are synthesized by intercalating metal atoms into the solid-phase hydrocarbons picene and coronene. The highest reported superconducting transition temperature, T(c), of a hydrocarbon superconductor is 18 K for K(3)picene. The physics and chemistry of the hydrocarbon superconductors are extensively described for A(x)picene (A: alkali and alkali earth-metal atoms) for x = 0-5. The theoretical picture of their electronic structure is also reviewed. Future prospects for hydrocarbon superconductors are discussed from the viewpoint of combining electronics with condensed-matter physics: modification of the physical properties of hydrocarbon solids is explored by building them into a field-effect transistor. The features of other carbon-based superconductors are compared to clarify the nature of hydrocarbon superconductors.

Fabrication of ring oscillators using organic molecules of phenacene and perylenedicarboximide.

Organic field-effect transistors (FETs) can be applied to radio-frequency identification tags (RFIDs) and active-matrix flat-panel displays. For RFID application, a cardinal functional block is a ring oscillator using an odd number of inverters to convert DC voltage to AC. Herein, we report the properties of two ring oscillators, one formed with [6]phenacene for a p-channel FET and N,N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) for an n-channel FET, and one formed with 3,10-ditetradecylpicene ((C14H29)2-picene) for a p-channel FET and PTCDI-C8 for an n-channel FET. The former ring oscillator provided a maximum oscillation frequency, f osc of 26 Hz, and the latter a maximum f osc of 21 Hz. The drain-drain voltage, V DD, applied to these ring oscillators was 100 V. This may be the first step towards a future practical ring oscillator using phenacene molecules. The values of field-effect mobility, µ in the p-channel [6]phenacene FET and n-channel PTCDI-C8 FET, which form the building blocks in the ring oscillator with an f osc value of 26 Hz, are 1.19 and 1.50 × 10-1 cm2 V-1 s-1, respectively, while the values in the p-channel (C14H29)2-picene FET and n-channel PTCDI-C8 FET, which form the ring oscillator with an f osc of 21 Hz, are 1.85 and 1.54 × 10-1 cm2 V-1 s-1, respectively. The µ values in the p-channel FETs are higher by one order of magnitude than those of the n-channel FET, which must be addressed to increase the value of f osc. Finally, we fabricated a ring oscillator with ZrO2 instead of parylene for the gate dielectric, which provided the low-voltage operation of the ring oscillator, in which [6]phenacene and PTCDI-C8 thin-film FETs were employed. The value of f osc obtained in the ring oscillator was 24 Hz. In this ring oscillator, the V DD value applied was limited to 20 V. The durability of the ring oscillators was also investigated, and the bias stress effect on the f osc and the amplitude of the output voltage, V out are discussed. This successful operation of ring oscillators represents an important step towards the realization of future practical integrated logic gate circuits using phenacene molecules.

Photochemical synthesis and device application of acene-phenacene hybrid molecules, dibenzo[n]phenacenes (n = 5-7).

Dibenzo[n]phenecenes (DBnPs, n = 5-7) were conveniently synthesised through Mallory photocyclization as the key step. Effective mobilities of single-crystal field-effect transistors of DBnPs were evaluated to demonstrate that C2h-symmetrical DB6P shows higher performance than C2v-symmetrical DB5P and DB7P.

Superconductivity in topological insulator ß-PdBi2 under pressure.

The topological insulator PdBi2 exhibits two different crystal phases at ambient pressure, i.e., 'α-PdBi2' and ' -PdBi2'. The pressure dependence of crystal structure and superconductivity of α-PdBi2 has been fully elucidated thus far. However, the physical properties of ß-PdBi2 crystals under pressure have not been sufficiently investigated. In this study, we fully investigate the crystal structure and superconductivity of ß-PdBi2 under pressure based on synchrotron x-ray diffraction (XRD) patterns. The temperature dependence of ß-PdBi2 indicates its superconductivity with a superconducting transition temperature (T c) as high as 4.10 K, and its crystal structure is tetragonal [space group of I4/mmm (no. 139)]. The XRD patterns at 0-22.0 GPa indicate no structural phase transitions, and the unit cell volume shrinks monotonically with pressure, unlike the behavior of α-PdBi2. Furthermore, α-PdBi2 transformed to ß-PdBi2 under pressure. This suggests that ß-PdBi2 is stable under pressure. The superconductivity is clearly observed at 0-11.8 GPa, and the value of T c is almost constant at ∼4.4 K. The temperature dependence of the upper critical field at ambient pressure and 10.7 GPa indicates that the superconductivity is not attributed to a simple s-wave dirty limit but an s-wave clean or p-wave polar model. This is the first systematic study of superconductivity of topological insulator ß-PdBi2 under pressure.