RESUMEN
Correlating atomic configurations-specifically, degree of disorder (DOD)-of an amorphous solid with properties is a long-standing riddle in materials science and condensed matter physics, owing to difficulties in determining precise atomic positions in 3D structures1-5. To this end, 2D systems provide insight to the puzzle by allowing straightforward imaging of all atoms6,7. Direct imaging of amorphous monolayer carbon (AMC) grown by laser-assisted depositions has resolved atomic configurations, supporting the modern crystallite view of vitreous solids over random network theory8. Nevertheless, a causal link between atomic-scale structures and macroscopic properties remains elusive. Here we report facile tuning of DOD and electrical conductivity in AMC films by varying growth temperatures. Specifically, the pyrolysis threshold temperature is the key to growing variable-range-hopping conductive AMC with medium-range order (MRO), whereas increasing the temperature by 25 °C results in AMC losing MRO and becoming electrically insulating, with an increase in sheet resistance of 109 times. Beyond visualizing highly distorted nanocrystallites embedded in a continuous random network, atomic-resolution electron microscopy shows the absence/presence of MRO and temperature-dependent densities of nanocrystallites, two order parameters proposed to fully describe DOD. Numerical calculations establish the conductivity diagram as a function of these two parameters, directly linking microstructures to electrical properties. Our work represents an important step towards understanding the structure-property relationship of amorphous materials at the fundamental level and paves the way to electronic devices using 2D amorphous materials.
RESUMEN
It is commonly believed that it is unfavorable for adsorbed H atoms on carbonaceous surfaces to form H2 without the help of incident H atoms. Using ring-polymer instanton theory to describe multidimensional tunnelling effects, combined with ab initio electronic structure calculations, we find that these quantum-mechanical simulations reveal a qualitatively different picture. Recombination of adsorbed H atoms, which was believed to be irrelevant at low temperature due to high barriers, is enabled by deep tunnelling, with reaction rates enhanced by tens of orders of magnitude. Furthermore, we identify a new path for H recombination that proceeds via multidimensional tunnelling but would have been predicted to be unfeasible by a simple one-dimensional description of the reaction. The results suggest that hydrogen molecule formation at low temperatures are rather fast processes that should not be ignored in experimental settings and natural environments with graphene, graphite, and other planar carbon segments.