Influence of Magnetic and Electric Fields on Universal Conductance Fluctuations in Thin Films of the Dirac Semimetal Cd3As2.

Time-reversal invariance (TRS) and inversion symmetry (IS) are responsible for the topological band structure in Dirac semimetals (DSMs). These symmetries can be broken by applying an external magnetic or electric field, resulting in fundamental changes to the ground state Hamiltonian and a topological phase transition. We probe these changes using universal conductance fluctuations (UCF) in the prototypical DSM, Cd3As2. With increasing magnetic field, the magnitude of the UCF decreases by a factor of 2, in agreement with numerical calculations of the effect of broken TRS. In contrast, the magnitude of the UCF increases monotonically when the chemical potential is gated away from the charge neutrality point. We attribute this to Fermi surface anisotropy rather than broken IS. The concurrence between experimental data and theory provides unequivocal evidence that UCF are the dominant source of fluctuations and offers a general methodology for probing broken-symmetry effects in topological quantum materials.

Optimising graphene visibility in van der Waals heterostructures.

Graphene constitutes one of the key elements in many functional van der Waals heterostructures. However, it has negligible optical visibility due to its monolayer nature. Here we study the visibility of graphene in various van der Waals heterostructures and include the effects of the source spectrum, oblique incidence and the spectral sensitivity of the detector to obtain a realistic model. A visibility experiment is performed at different wavelengths, resulting in a very good agreement with our calculations. This allows us to reliably predict the conditions for better visibility of graphene in van der Waals heterostructures. The framework and the codes provided in this work can be extended to study the visibility of any 2D material within an arbitrary van der Waals heterostructure.

Benchmarking Noise and Dephasing in Emerging Electrical Materials for Quantum Technologies.

As quantum technologies develop, a specific class of electrically conducting materials is rapidly gaining interest because they not only form the core quantum-enabled elements in superconducting qubits, semiconductor nanostructures, or sensing devices, but also the peripheral circuitry. The phase coherence of the electronic wave function in these emerging materials will be crucial when incorporated in the quantum architecture. The loss of phase memory, or dephasing, occurs when a quantum system interacts with the fluctuations in the local electromagnetic environment, which manifests in "noise" in the electrical conductivity. Hence, characterizing these materials and devices therefrom, for quantum applications, requires evaluation of both dephasing and noise, although there are very few materials where these properties are investigated simultaneously. Here, the available data on magnetotransport and low-frequency fluctuations in electrical conductivity are reviewed to benchmark the dephasing and noise. The focus is on new materials that are of direct interest to quantum technologies. The physical processes causing dephasing and noise in these systems are elaborated, the impact of both intrinsic and extrinsic parameters from materials synthesis and devices realization are evaluated, and it is hoped that a clearer pathway to design and characterize both material and devices for quantum applications is thus provided.

Graphene functionalized field-effect transistors for ultrasensitive detection of Japanese encephalitis and Avian influenza virus.

Graphene, a two-dimensional nanomaterial, has gained immense interest in biosensing applications due to its large surface-to-volume ratio, and excellent electrical properties. Herein, a compact and user-friendly graphene field effect transistor (GraFET) based ultrasensitive biosensor has been developed for detecting Japanese Encephalitis Virus (JEV) and Avian Influenza Virus (AIV). The novel sensing platform comprised of carboxy functionalized graphene on Si/SiO2 substrate for covalent immobilization of monoclonal antibodies of JEV and AIV. The bioconjugation and fabrication process of GraFET was characterized by various biophysical techniques such as Ultraviolet-Visible (UV-Vis), Raman, Fourier-Transform Infrared (FT-IR) spectroscopy, optical microscopy, Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The change in the resistance due to antigen-antibody interaction was monitored in real time to evaluate the electrical response of the sensors. The sensors were tested in the range of 1 fM to 1 µM for both JEV and AIV antigens, and showed a limit of detection (LOD) upto 1 fM and 10 fM for JEV and AIV respectively under optimised conditions. Along with ease of fabrication, the GraFET devices were highly sensitive, specific, reproducible, and capable of detecting ultralow levels of JEV and AIV antigen. Moreover, these devices can be easily integrated into miniaturized FET-based real-time sensors for the rapid, cost-effective, and early Point of Care (PoC) diagnosis of JEV and AIV.

Ultra-sensitive graphene-bismuth telluride nano-wire hybrids for infrared detection.

The myriad technological applications of infrared radiation sensors make the search for ultra-sensitive detectors extremely crucial. Materials such as bismuth telluride (Bi2Te3), having a small bulk band gap of 0.17 eV, are ideal infrared detectors. However, due to the high recombination rate of photo-generated charge carriers in the bulk, the electrical response under optical illumination is typically very weak in these materials. We have circumnavigated this by sensitizing graphene with Bi2Te3 nano-wires. These hybrid devices show an ultra-high sensitivity of ∼106 A W-1, under incident electromagnetic radiation from 940 nm to 1720 nm. The theoretical limit of the noise equivalent power and specific detectivity in these devices are ∼10-18 W Hz-1/2 and ∼1011 Jones respectively, which are comparable to those of some of the best known detectors.

Morphology controlled synthesis of low bandgap SnSe2 with high photodetectivity.

Engineering the properties of layered metal dichalcogenides (LMDs) requires stringent control of their morphology. Herein, using a scalable one-step solvothermal technique, we report the synthesis of SnSe2 under two different conditions, leading to the formation of nanoflakes and nanoflowers. The use of oleic acid in the reaction leads to the formation of nanoflowers, and the presence of ethanol in the reaction medium leads to the formation of nanoflakes. Ab initio density functional theory calculations rationalise this observation, revealing a stronger adsorption of ethanol on the {0001} facet compared to the acid. Furthermore, these SnSe2 nanoflakes, when integrated with graphene, also respond to incident electromagnetic radiation, from the visible to near infrared regime, with a specific detectivity of ∼5 × 1010 Jones, which is comparable to that of the best available photodetectors, making them suitable for use in various technological applications.

Microfluidic-based graphene field effect transistor for femtomolar detection of chlorpyrifos.

Chlorpyrifos is one of the most widely used pesticides that acts on the nervous system by inhibiting acetylcholinesterase. Prolonged use of chlorpyrifos causes severe neurological, autoimmune, and persistent developmental disorders in humans. Therefore, in this study, a highly sensitive and robust biosensor platform was devised by fabricating graphene field effect transistors (graFET) on Si/SiO2 substrate for the detection of chlorpyrifos in real samples. Anti-chlorpyrifos antibodies were immobilized successfully on the graphene surface. Under optimal conditions, graFET sensor showed an excellent response for chlorpyrifos detection in the linear range of 1 fM to 1 µM with a limit of detection up to 1.8 fM in spiked samples. The developed graFET biosensor is highly stable, sensitive, and specific for chlorpyrifos as confirmed by its significant ability to detect changes in electrostatic potential. These findings signify useful efficacy of immunobiosensors for the detection of chlorpyrifos and other organophosphates in fruits and vegetables.

A smart nanosensor for the detection of human immunodeficiency virus and associated cardiovascular and arthritis diseases using functionalized graphene-based transistors.

Human immunodeficiency virus (HIV), which isa worldwide public health issue, is commonly associated with cardiovascular disorders (CVDs) and rheumatoid arthritis (RA). A smart nanosensor was developed for the detection of HIV and its related diseases (CVDs and RA) using graphene-based field-effect transistors (FETs). In this study, amine-functionalized graphene (afG) was conjugated with antibodies [anti-p24 for HIV, anti-cardiac troponin 1 (anti-cTn1) for CVDs, and anti-cyclic citrullinated peptide (anti-CCP) for RA] to detect various biomarkers. The antibodies were covalently conjugated to afG via carbodiimide activation. The bioconjugate (graphene-antibody) was characterized by various biophysical techniques such as UV-Vis, Raman spectroscopy, scanning electron microscopy (SEM), and atomic force microscopy (AFM). The electrochemical performance of the sensor was evaluated with respect to changes in the resistance of the electrode surface due to the interaction of the antigen with its specific antibody. The developed sensor was highly sensitive and showed a linear response to p24, cTn1, and, CCP from 1 fg/mL to 1 µg/mL. The limit of detection (LOD) was 100 fg/mL for p24 and 10 fg/mL for cTn1 and CCP under standard optimized conditions. The graphene-based smart nanodevice demonstrated excellent performance; thus, it could be used for the on-site detection of HIV, CVD, and RA biomarkers in real samples.

Bulk-Induced 1/f Noise at the Surface of Three-Dimensional Topological Insulators.

Slow intrinsic fluctuations of resistance, also known as the flicker noise or 1/f-noise, in the surface transport of strong topological insulators (TIs) is a poorly understood phenomenon. Here, we have systematically explored the 1/f-noise in field-effect transistors (FET) of mechanically exfoliated Bi1.6Sb0.4Te2Se TI films when transport occurs predominantly via the surface states. We find that the slow kinetics of the charge disorder within the bulk of the TI induces mobility fluctuations at the surface, providing a new source of intrinsic 1/f-noise that is unique to bulk TI systems. At small channel thickness, the noise magnitude can be extremely small, corresponding to the phenomenological Hooge parameter γH as low as ≈10(-4), but it increases rapidly when channel thickness exceeds ∼1 µm. From the temperature (T)-dependence of noise, which displayed sharp peaks at characteristic values of T, we identified generation-recombination processes from interband transitions within the TI bulk as the dominant source of the mobility fluctuations in surface transport. Our experiment not only establishes an intrinsic microscopic origin of noise in TI surface channels, but also reveals a unique spectroscopic information on the impurity bands that can be useful in bulk TI systems in general.