1.3 microm quantum dot laser in coupled-cavity-injection-grating design with bandwidth of 20 GHz under direct modulation.

Using a multi section laser in coupled cavity injection grating design based on 1.3 microm InGaAs/GaAs quantum dot (QD) active region we were able to enhance the 3 dB modulation bandwidth well beyond the inherent material modulation bandwidth. The material bandwidth was determined by measurements on distributed feedback (DFB) devices to approximately 8 GHz. The special multisectional design allows interaction between the lasing mode and a second mode used as catalyst and enables a high resonance frequency of the device. Based on active QD material this approach allowed us to reach a cut off frequency of 20 GHz in the small signal response of the device.

High-power quantum-dot-based semiconductor disk laser.

We demonstrate multiwatt cw output power from an optically pumped quantum-dot semiconductor disk laser. Continuous-wave output power of 4.35 W with 22% slope efficiency was demonstrated at a center wavelength of 1,032 nm. This represents an increase in power of 15 times and an increase in slope efficiency of 10 times from the previously published results using Stranski-Krastanow grown quantum dots. An intracavity diamond heat spreader was used for thermal management. The maximum output power was limited by the available pump power, and no sign of thermal rollover was observed.

Quantum dot laser with 75 nm broad spectrum of emission.

We report on a quantum dot laser having an emission spectrum as broad as 74.9 nm at 25 degrees C in the 1.2-1.28 wavelength interval with a total pulsed output power of 750 mW in single lateral mode regime and the average spectral power density of >10 mW/nm. A significant overlap and approximate equalization of the ground-state and the excited-state emission bands in the laser's spectrum is achieved by means of intentional inhomogeneous broadening of the quantum dot energy levels.