Skin electronics from scalable fabrication of an intrinsically stretchable transistor array.

Skin-like electronics that can adhere seamlessly to human skin or within the body are highly desirable for applications such as health monitoring, medical treatment, medical implants and biological studies, and for technologies that include human-machine interfaces, soft robotics and augmented reality. Rendering such electronics soft and stretchable-like human skin-would make them more comfortable to wear, and, through increased contact area, would greatly enhance the fidelity of signals acquired from the skin. Structural engineering of rigid inorganic and organic devices has enabled circuit-level stretchability, but this requires sophisticated fabrication techniques and usually suffers from reduced densities of devices within an array. We reasoned that the desired parameters, such as higher mechanical deformability and robustness, improved skin compatibility and higher device density, could be provided by using intrinsically stretchable polymer materials instead. However, the production of intrinsically stretchable materials and devices is still largely in its infancy: such materials have been reported, but functional, intrinsically stretchable electronics have yet to be demonstrated owing to the lack of a scalable fabrication technology. Here we describe a fabrication process that enables high yield and uniformity from a variety of intrinsically stretchable electronic polymers. We demonstrate an intrinsically stretchable polymer transistor array with an unprecedented device density of 347 transistors per square centimetre. The transistors have an average charge-carrier mobility comparable to that of amorphous silicon, varying only slightly (within one order of magnitude) when subjected to 100 per cent strain for 1,000 cycles, without current-voltage hysteresis. Our transistor arrays thus constitute intrinsically stretchable skin electronics, and include an active matrix for sensory arrays, as well as analogue and digital circuit elements. Our process offers a general platform for incorporating other intrinsically stretchable polymer materials, enabling the fabrication of next-generation stretchable skin electronic devices.

π-Extended Thiazole-Containing Polymer Semiconductor for Balanced Charge-Carrier Mobilities.

A low-band gap semiconducting polymer with an acceptor-donor-acceptor architecture is newly designed and synthesized by incorporating a π-extended thiazole-vinylene-thiazole unit. The resulting thiazole-containing diketopyrrolopyrrole copolymer exhibits well-balanced ambipolar characteristics with hole mobility of up to 0.11 cm2 V-1 s-1 and electron mobility of up to 0.30 cm2 V-1 s-1 , which are suitable for applications in polymer electronics.

Morphology Driven by Molecular Structure of Thiazole-Based Polymers for Use in Field-Effect Transistors and Solar Cells.

The effects of the molecular structure of thiazole-based polymers on the active layer morphologies and performances of electronic and photovoltaic devices were studied. Thus, thiazole-based conjugated polymers with a novel thiazole-vinylene-thiazole (TzVTz) structure were designed and synthesized. The TzVTz structure was introduced to extend the π conjugation and coplanarity of the polymer chains. By combining alkylthienyl-substituted benzo[1,2-b:4,5-b']dithiophene (BDT) or dithieno[2,3-d:2',3'-d']benzo[1,2-b:4,5-b']dithiophene (DTBDT) electron-donating units and a TzVTz electron-accepting unit, enhanced intermolecular interactions and charge transport were obtained in the novel polymers BDT-TzVTz and DTBDT-TzVTz. With a view to using the polymers in transistor and photovoltaic applications, the molecular self-assembly in and their nanoscale morphologies of the active layers were controlled by thermal annealing to enhance the molecular packing and by introducing a diphenyl ether solvent additive to improve the miscibility between polymer donors and [6,6]phenyl-C71-butyric acid methyl ester (PC71 BM) acceptors, respectively. The morphological characterization of the photoactive layers showed that a higher degree of π-electron delocalization and more favorable molecular packing in DTBDT-TzVTz compared with in BDT-TzVTz leads to distinctly higher performances in transistor and photovoltaic devices. The superior performance of a photovoltaic device incorporating DTBDT-TzVTz was achieved through the superior miscibility of DTBDT-TzVTz with PC71 BM and the improved crystallinity of DTBDT-TzVTz in the nanofibrillar structure.

Acene-Modified Small-Molecule Donors for Organic Photovoltaics.

A series of acene-modified small molecules have been designed and synthesized, and their photovoltaic characteristics were studied by using the small molecules in organic photovoltaics (OPVs). Different cores were introduced to modulate the conjugation lengths of the small molecules and the bulk heterojunction (BHJ) morphologies. Three small-molecule donors were prepared, namely Ph-TTR, Na-TTR, and An-TTR, which have phenyl, naphthalene, and anthracene moieties, respectively, as conjugated cores. These donors were synthesized in a few steps and exhibited favorable BHJ morphologies, thereby giving promising power conversion efficiencies (PCEs). The donors showed excellent miscibility with the acceptor PC71 BM, and the use of the additive 1,8-diiodooctane (DIO) led to a remarkable increase in crystallinity, thereby increasing the PCEs of their OPVs. Of the three donors, Na-TTR showed the most efficient charge carrier generation and favorable molecular packing structures; hence, of the three types of devices tested, the Na-TTR:PC71 BM devices exhibited the highest PCE, specifically 6.27 %, without pre- or post-treatments. The promising PCEs achieved from these easily synthesized acene-modified small molecules suggested that acene-modified small molecules can be useful materials in OPVs.

Twisted Linker Effect on Naphthalene Diimide-Based Dimer Electron Acceptors for Non-fullerene Organic Solar Cells.

Naphthalene diimide (NDI) dimers, NDI-Ph-NDI with a phenyl linker and NDI-Xy-NDI with a xylene linker, are designed and synthesized. The influence of the xylene and phenyl linkers on optical properties, electrochemical properties, morphology, and device performance is systematically investigated. Non-fullerene organic solar cells (OSCs) with NDI-Ph-NDI show poor device efficiency due to aggregation of polymer chains and/or NDI dimers caused by the highly planar structure of NDI-Ph-NDI. Although NDI-Xy-NDI is a non-planar structure, uniform surface morphology and weak bimolecular recombination lead to high power conversion efficiencies of 3.11%, which is the highest value in non-fullerene OSCs with NDI small molecules.

Side-Chain-Induced Rigid Backbone Organization of Polymer Semiconductors through Semifluoroalkyl Side Chains.

While high-mobility p-type conjugated polymers have been widely reported, high-mobility n-type conjugated polymers are still rare. In the present work, we designed semifluorinated alkyl side chains and introduced them into naphthalene diimide-based polymers (PNDIF-T2 and PNDIF-TVT). We found that the strong self-organization of these side chains induced a high degree of order in the attached polymer backbones by forming a superstructure composed of "backbone crystals" and "side-chain crystals". This phenomenon was shown to greatly enhance the ordering along the backbone direction, and the resulting polymers thus exhibited unipolar n-channel transport in field-effect transistors with remarkably high electron mobility values of up to 6.50 cm(2) V(-1) s(-1) and with a high on-off current ratio of 10(5).

Synergetic Evolution of Diketopyrrolopyrrole-Based Polymeric Semiconductor for High Reproducibility and Performance: Random Copolymerization of Similarly Shaped Building Blocks.

A new random copolymer consisting of similarly shaped donor-acceptor building blocks of diketopyrrolopyrrole-selenophene-vinylene-selenophene (DPP-SVS) and DPP-thiophene-vinylene-thiophene (DPP-TVT) is designed and synthesized. The resulting P-DPP-SVS(5)-TVT(5) with an equal molecular ratio of the two building blocks produced significantly enhanced solubility when compared to that of the two homopolymers, PDPP-SVS and PDPP-TVT. More importantly, despite the maximum segmental randomness of the PDPP-SVS(5)-TVT(5) copolymer, its crystalline perfectness and preferential orientation are outstanding, even similar to those of the homopolymers thanks to the similarity of the two building blocks. This unique property produces a high charge carrier mobility of 1.23 cm2 V-1 s-1 of PDPP-SVS(5)-TVT(5), as determined from polymer field-effect transistor (PFET) measurements. The high solubility of PDPP-SVS(5)-TVT(5) promotes formulation of high-viscosity solutions which could be successfully processed to fabricate large-areal PFETs onto hydrophobically treated 4 in. wafers. A total of 269 individual PFETs are fabricated. These devices exhibit extremely narrow device-to-device deviations without a single failure and demonstrate an average charge carrier mobility of 0.66 cm2 V-1 s-1 with a standard deviation of 0.064. This is the first study to report on successfully realizing large-areal reproducibility of high-mobility polymeric semiconductors.

Record high hole mobility in polymer semiconductors via side-chain engineering.

Charge carrier mobility is still the most challenging issue that should be overcome to realize everyday organic electronics in the near future. In this Communication, we show that introducing smart side-chain engineering to polymer semiconductors can facilitate intermolecular electronic communication. Two new polymers, P-29-DPPDBTE and P-29-DPPDTSE, which consist of a highly conductive diketopyrrolopyrrole backbone and an extended branching-position-adjusted side chain, showed unprecedented record high hole mobility of 12 cm(2)/(V·s). From photophysical and structural studies, we found that moving the branching position of the side chain away from the backbone of these polymers resulted in increased intermolecular interactions with extremely short π-π stacking distances, without compromising solubility of the polymers. As a result, high hole mobility could be achieved even in devices fabricated using the polymers at room temperature.

Deep-blue phosphorescence from perfluoro carbonyl-substituted iridium complexes.

The new deep-blue iridium(III) complexes, (TF)2Ir(pic), (TF)2Ir(fptz), (HF)2Ir(pic), and (HF)2Ir(fptz), consisting of 2',4″-difluororphenyl-3-methylpyridine with trifluoromethyl carbonyl or heptafluoropropyl carbonyl at the 3' position as the main ligand and a picolinate or a trifluoromethylated-triazole as the ancillary ligand, were synthesized and characterized for applications in organic light-emitting diodes (OLEDs). Density function theory (DFT) calculations showed that these iridium complexes had a wide band gap, owing to the introduction of the strong electron withdrawing perfluoro carbonyl group. Time-dependent DFT (TD-DFT) calculations suggested that their lowest triplet excited state was dominated by a HOMO → LUMO transition and that the contribution of the metal-to-ligand charge transfer (MLCT) was higher than 34% for all four complexes, indicating that strong spin-orbit coupling exists in the complexes. The 10 wt % (TF)2Ir(pic) doped 9-(3-(9H-carbazole-9-yl)phenyl)-3-(dibromophenylphosphoryl)-9H-carbazole (mCPPO1) film exhibited the highest photoluminescence quantum yield of 74 ± 3% among the films based on the four complexes. Phosphorescent OLEDs based on (TF)2Ir(pic) and (TF)2Ir(fptz) exhibited maximum external quantum efficiencies of 17.1% and 8.4% and Commission Internationale de l'Eclairage (CIE) coordinates of (0.141, 0.158) and (0.147, 0.116), respectively. These CIE coordinates represent some of the deepest blue emissions ever achieved from phosphorescent OLEDs with considerably high EQEs.

Synthesis of poly(benzothiadiazole-co-dithienobenzodithiophenes) and effect of thiophene insertion for high-performance polymer solar cells.

We describe herein the synthesis of novel donor-acceptor conjugated polymers with dithienobenzodithiophenes (DTBDT) as the electron donor and 2,1,3-benzothiadiazole as the electron acceptor for high-performance organic photovoltaics (OPVs). We studied the effects of strategically inserting thiophene into the DTBDT as a substituent on the skeletal structure on the opto-electronic performances of fabricated devices. From UV/Vis absorption, electrochemical, and field-effect transistor analyses, we found that the thiophene-containing DTBDT derivative can substantially increase the orbital overlap area between adjacent conjugated chains and thus dramatically enhance charge-carrier mobility up to 0.55 cm(2) V(-1) s(-1). The outstanding charge-transport characteristics of this polymer allowed the realization of high-performance organic solar cells with a power conversion efficiency (PCE) of 5.1 %. Detailed studies on the morphological factors that enable the maximum PCE of the polymer solar cells are discussed along with a hole/electron mobility analysis based on the space-charge-limited current model.

Synthesis and transistor properties of asymmetric oligothiophenes: relationship between molecular structure and device performance.

A series of three thiophene-naphthalene-based asymmetric oligomers-5-decyl-2,2':5',2'':5'',2'''-quaterthiophene (DtT), 5-decyl-5''-(naphthalen-2-yl)-2,2':5',2''-terthiophene (D3TN), and 5-(4-decylphenyl)-5'-(naphthalen-2-yl)-2,2'-bithiophene (DP2TN)-was synthesized by Suzuki cross-coupling reactions. The long alkyl side chains improved both the solubility of the oligomers in solvents and their tendency to self-assemble. UV/Vis absorption measurements suggested that DtT, D3TN, and DP2TN form H-type aggregates with a face-to-face packing structure. In addition, the three oligomers were found to adopt vertically aligned crystalline structures in films deposited on substrates, as revealed by grazing-incidence wide-angle X-ray scattering. These oligomers were used as the active layers of p-type organic field-effect transistors, and the resulting devices showed field-effect mobilities of 3.3×10(-3)  cm(2) V(-1) s(-1) for DtT, 1.6×10(-2)  cm(2) V(-1) s(-1) for D3TN, and 3.7×10(-2)  cm(2) V(-1) s(-1) for DP2TN. The differences in transistor performances were attributed to the degree of π overlap and the morphological differences determined by the molecular structures.

Charge transport characteristics of a high-mobility diketopyrrolopyrrole-based polymer.

In this study, we attempt to unveil the charge-transport abnormality of the widely studied diketopyrrolopyrrole (DPP)-based polymers with exceptionally high charge carrier mobility [>5 cm(2) V(-1) s(-1)]. Based on the electric field and temperature dependence of the charge-transport characteristics of the field effect transistor (FET) geometry of one of the highly conductive DPP derivatives, namely, (poly[2,5-bis(7-decylnonadecyl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-(E)-(1,2-bis(5-(thiophen-2-yl)selenophen-2-yl)ethene) (PDPPDTSE), we show that the high gate-source bias drew the carriers closer to the interface of the semiconductor/dielectric layers where the density of state (DOS) of the charge carrier is significantly broader than the bulk. We argue that the intrinsically narrow DOS in the PDPPDTSE bulk resulted in significantly different charge-transport behavior between the semiconductor bulk and the semiconductor/dielectric interface, which was not visible in the other low-mobility organic semiconductors that contain intrinsically high density of trap states in their bulk. To avoid these charge transport abnormalities, we try to operate the FETs under low gate bias without compromising the accumulated charge carrier density. By carefully employing a thin metal oxide covered with a self-assembled monolayer (SAM) as a dielectric layer, we can demonstrate low-voltage PDPPDTSE FETs with near-ideal performance both in terms of hysteresis-free operation and operating reliability while maintaining a high charge carrier mobility of ~2.8 cm(2) V(-1) s(-1).

Synthesis and characterization of novel p-type alkyl bithiophene end-capped anthracene and naphthalene derivatives for organic thin-film transistors.

New semiconductors having naphthalene and anthracene cores with hexylated bithiophene side units, 2,6-bis(5'-hexylbithiophen-2'-yl)naphthalene (HBT-NA) and 2,6-bis(5'-hexylbithiophen-2'-yl)anthracene (HBT-AN), were synthesized. HBT-AN and HBT-NA were characterized using FT-IR, 1H-NMR, Mass spectrum and elemental analysis. HBT-AN and HBT-NA showed well ordered crystalline with high thermal stabilities as evidenced by 5% weight loss at 447 degrees C for HBT-AN and 434 degrees C for HBT-NA. The closed packed structures between adjacent molecules were observed by studying UV-visible and photoluminescence (PL) in solution and film. The HOMO energy levels of HBT-NA and HBT-AN were found to be 5.47 eV and 5.42 eV, respectively. HBT-NA exhibits hole mobility of 8.4 x 10(-2) cm2Ns and on/off ratio of 5.6 x 10(5). HBT-AN shows 5.2 x 10(-2) cm2Ns and on/off ratio of 1.0 x 10(5).

New pyridopyrazine skelecton-based electron-transporting materials.

2,3-Di(pyridine-2-yl)-7-(4-triphenylsilyl)phenyl)pyrido[2,3-b]pyrazine (DPPP) containing pyridopyrazine was designed and synthesized as a new electron-transporting material for organic light-emitting devices (OLEDs). The obtained material forms homogeneous and stable amorphous film. The new synthesized showed the reversible cathodic reduction for hole blocking material and the low reduction potential for electron transporting material in organic EL devices. The molecule possess excellent thermal stability with glass transition temperature (T(g)) of 115 degrees C in nitrogen. DNTPD (60 nm)/NPD (30 nm)/CBP:Irppy 6% (40 nm)/BAIq (10 nm)/ETL (30 nm)/LiF (0.5 nm)/Al structured device were fabricated using DPPP as electron transport material. The maximum luminance reached at 25000 cd/m2. The current efficiency was 10.9 cd/A even high current.

Symmetric long alkyl chain end-capped anthracene derivatives for solution-processed organic thin-film transistors.

Three new anthracene derivatives, 2,6-bis(4-decylphenyl)anthracene (DDPAnt), 2-decyl-5-(2-(5-decylthiophen-2-yl)anthracen-6-yl)thiophene (DDTAnt), and 2,6-bis(4-decyloxy phenyl) anthracene (DDPXAnt) were synthesized by Suzuki cross-coupling reaction. The obtained oligomers were characterized by 1H NMR, FT-IR, Mass, UV-visible spectroscopy, cyclovotammetry, differencial scanning calorimetry, and thermogravimetric analysis. The thermal studies show that these oligomers are stable up to 400 degrees C. The solution processed OTFTs were fabricated using synthesized oligomers by spin-coating and drop casting processes on Si/SiO2. OTFTs based on DDPAnt showed the mobility of 7.6 x 10(-3) cm2/Vs and on/off ratio of 10(5).

Highly efficient phosphorescent organic light emitting diodes based on iridium(III) complex with bulky substituent spacers.

We developed highly efficient phosphorescent organic light emitting diodes (PHOLEDs) using iridium(III) complex, fac-tris[4-methyl-2-2(4'-trimethylsilylphenyl)pyridine] [Ir(msippy)3]. PHOLEDs based on Ir(msippy)3 complex exhibit the yellowish-green emission with CIE color coordinates of (0.31,0.64). These device performances were compared with those of the green emitting Ir(ppy)3-based devices. The higher external quantum efficiency (EQE) of 25.6% and the current efficiency of 84.4 cd/A were achieved for Ir(msippy)3-based device. The results show that the complete energy and/or charge transfer from the host to Ir(msippy)3 dopant in the emitting layer (EML) of the device resulted in the higher device efficiencies compared with those of Ir(ppy)3-based devices.

Donor-Acceptor Alternating Copolymer Compatibilizers for Thermally Stable, Mechanically Robust, and High-Performance Organic Solar Cells.

Small-molecule acceptor (SMA)-based organic solar cells (OSCs) have achieved high power conversion efficiencies (PCEs), while their long-term stabilities remain to be improved to meet the requirements for real applications. Herein, we demonstrate the use of donor-acceptor alternating copolymer-type compatibilizers (DACCs) in high-performance SMA-based OSCs, enhancing their PCE, thermal stability, and mechanical robustness simultaneously. Detailed experimental and computational studies reveal that the addition of DACCs to polymer donor (PD)-SMA blends effectively reduces PD-SMA interfacial tensions and stabilizes the interfaces, preventing the coalescence of the phase-separated domains. As a result, desired morphologies with exceptional thermal stability and mechanical robustness are obtained for the PD-SMA blends. The addition of 20 wt % DACCs affords OSCs with a PCE of 17.1% and a cohesive fracture energy (Gc) of 0.89 J m-2, higher than those (PCE = 13.6% and Gc = 0.35 J m-2) for the control OSCs without DACCs. Moreover, at an elevated temperature of 120 °C, the OSCs with 20 wt % DACC exhibit excellent morphological stability, retaining over 95% of the initial PCE after 300 h. In contrast, the control OSCs without the DACC rapidly degraded to below 60% of the initial PCE after 144 h.

Selenium-Substituted Non-Fullerene Acceptors: A Route to Superior Operational Stability for Organic Bulk Heterojunction Solar Cells.

Non-fullerene acceptors (NFAs) for organic solar cells (OSCs) have significantly developed over the past five years with continuous improvements in efficiency now over 18%. However, a key challenge still remains in order to fully realize their commercialization potential: the need to extend device lifetime and to control degradation mechanisms. Herein, we investigate the effect of two different molecular engineering routes on the widely utilized ITIC NFA, to tune its optoelectronic properties and interactions with the donor polymer in photoactive blends. Heavier selenium (Se) atoms substitute sulfur (S) atoms in the NFA core in either outer or inner positions, and methyl chains are attached to the end groups. By investigating the effects of these structural modifications on the long-term operational stability of bulk-heterojunction OSC devices, we identify outer selenation as a powerful strategy to significantly increase device lifetime compared to ITIC. Combining outer selenation and methylation results in an impressive 95% of the initial OSC efficiency being retained after 450 h under operating conditions, with an exceptionally long projected half-lifetime of 5600 h compared to 400 h for ITIC. We find that the heavier and larger Se atoms at outer-core positions rigidify the molecular structure to form highly crystalline films with low conformational energetic disorder. It further enhances charge delocalization over the molecule, promoting strong intermolecular interactions among acceptor molecules. Upon methylation, this strong intermolecular interaction stabilizes acceptor domains in blends to be resilient to light-induced morphological changes, thereby leading to superior device stability. Our results highlight the crucial role of NFA molecular structure for OSC operational stability and provide important NFA design rules via heteroatom position and end-group control.

Direct Observation of Confinement Effects of Semiconducting Polymers in Polymer Blend Electronic Systems.

The advent of special types of polymeric semiconductors, known as "polymer blends," presents new opportunities for the development of next-generation electronics based on these semiconductors' versatile functionalities in device applications. Although these polymer blends contain semiconducting polymers (SPs) mixed with a considerably high content of insulating polymers, few of these blends unexpectedly yield much higher charge carrier mobilities than those of pure SPs. However, the origin of such an enhancement has remained unclear owing to a lack of cases exhibiting definite improvements in charge carrier mobility, and the limited knowledge concerning the underlying mechanism thereof. In this study, the morphological changes and internal nanostructures of polymer blends based on various SP types with different intermolecular interactions in an insulating polystyrene matrix are investigated. Through this investigation, the physical confinement of donor-acceptor type SP chains in a continuous nanoscale network structure surrounded by polystyrenes is shown to induce structural ordering with more straight edge-on stacked SP chains. Hereby, high-performance and transparent organic field-effect transistors with a hole mobility of ≈5.4 cm2 V-1 s-1 and an average transmittance exceeding 72% in the visible range are achieved.

Highly Efficient Deep-Blue OLEDs using a TADF Emitter with a Narrow Emission Spectrum and High Horizontal Emitting Dipole Ratio.

New blue (DBA-SAB) and deep-blue (TDBA-SAF) thermally activated delayed fluorescence (TADF) emitters are synthesized for blue-emitting organic-light emitting diodes (OLEDs) by incorporating spiro-biacridine and spiro-acridine fluorene donor units with an oxygen-bridged boron acceptor unit, respectively. The molecules show blue and deep-blue emission because of the deep highest occupied molecular energy levels of the donor units. Besides, both emitters exhibit narrow emission spectra with the full-width at half maximum (FWHM) of less than 65 nm due to the rigid donor and acceptor units. In addition, the long molecular structure along the transition dipole moment direction results in a high horizontal emitting dipole ratio over 80%. By combining the effects, the OLED utilizing DBA-SAB as the emitter exhibits a maximum external quantum efficiency (EQE) of 25.7% and 1931 Commission Internationale de l'éclairage (CIE) coordinates of (0.144, 0.212). Even a higher efficiency deep blue TADF OLED with a maximum EQE of 28.2% and CIE coordinates of (0.142, 0.090) is realized using TDBA-SAF as the emitter.