Dispersion properties of sulfur doped gallium selenide crystals studied by THz TDS.

High optical quality nonlinear crystals of solid solution GaSe(1-x)S(x), x=0, 0.05, 0.11, 0.22, 0.29, 0.44, 1 were grown by modified Bridgman method with heat field rotation. Ordinary and extraordinary wave dispersion was studied in detail as a function of sulfur content by terahertz time-domain spectroscopy (THz TDS) in the 0.3-4 THz range using cleaved and processed (cut and polished) crystals. Suitable dispersion equations for different parts of the entire transparency range were derived, utilizing comparative analyses of the measured data, the available published data, and approximations in the form of Sellmeier equations. A criterion was proposed for selecting measurement results of adequate quality, based on the etalon patterns in the transmission spectrum.

Giant non-linear susceptibility of hydrogenic donors in silicon and germanium.

Implicit summation is a technique for the conversion of sums over intermediate states in multiphoton absorption and the high-order susceptibility in hydrogen into simple integrals. Here, we derive the equivalent technique for hydrogenic impurities in multi-valley semiconductors. While the absorption has useful applications, it is primarily a loss process; conversely, the non-linear susceptibility is a crucial parameter for active photonic devices. For Si:P, we predict the hyperpolarizability ranges from χ (3)/n 3D = 2.9 to 580 × 10-38 m5/V2 depending on the frequency, even while avoiding resonance. Using samples of a reasonable density, n 3D, and thickness, L, to produce third-harmonic generation at 9 THz, a frequency that is difficult to produce with existing solid-state sources, we predict that χ (3) should exceed that of bulk InSb and χ (3) L should exceed that of graphene and resonantly enhanced quantum wells.

SHG in doped GaSe:In crystals.

Optical transmission range and phase matching (PM) conditions for second harmonic generation (SHG) of Er3+:YSGG and CO2 laser in indium doped GaSe:In(0.1, 1.23, 2.32 mass%) are studied in comparison with these in pure and sulfur doped GaSe:S(0.09, 0.5, 2.2, 3 mass%) crystals. No changes in transparency curve are found in GaSe crystals up to 2.32 mass% indium content, but as small change as 0.18 degrees in PM angle for 2.79 microm Er3+:YSGG laser SHG and approximately 0.06 degrees for 9.58 microm CO2 laser emission line SHG are detected. PM properties of the crystals are evaluated as a function of temperature over the range from -165 to 230 degrees C. The value of dtheta/dT, the change in PM angle with variation of temperature, is found to be very small for GaSe:In crystals. While for SHG of Er3+:YSGG laser, dtheta/dT =22"/1 degrees C only, it is as small as -4.9"/1 degrees C for that of CO2 laser radiation. Linear variation of PM angle with temperature increasing is an indicator of absence of crystals structure transformation within temperature range from -165 to 230 degrees C. Thus, application of GaSe:In solid solutions in high average power nonlinear optical systems seems to be prospective.

SHG phase matching in GaSe and mixed GaSe1(1-x)S(x), x < or =0.412, crystals at room temperature.

The optical properties of p-type GaSe and mixed GaSe(1-x)S(x), x=0.04, 0.023, 0.090, 0.133, 0.175, 0.216, 0.256, 0.362, 0.369, and 0.412, crystals were studied to reveal the potentials for phase matching and frequency conversion. Comparative experiment on Er3+:YSGG and CO2 laser SHG at identical experimental conditions is carried out at room temperature. Any change in polytype structure of GaSe1(1-x)S(x) was not found.

Acceptable composition-ratio variations of a mixed crystal for nonlinear laser device applications.

A theory is developed to predict some crucial parameters that optimize the performance of mixed nonlinear crystals in nonlinear devices. These include acceptable variations of the composition ratio of the parent crystals and the optimal as well as acceptable interaction lengths for any interaction. The theory is successfully applied to make necessary predictions for the newly developed LiIn(Se(x)S(1-x))2 crystal for second-harmonic and optical parametric generation.