Manipulating the insulator-metal transition through tip-induced hydrogenation.

Manipulating the insulator-metal transition in strongly correlated materials has attracted a broad range of research activity due to its promising applications in, for example, memories, electrochromic windows and optical modulators1,2. Electric-field-controlled hydrogenation using ionic liquids3-6 and solid electrolytes7-9 is a useful strategy to obtain the insulator-metal transition with corresponding electron filling, but faces technical challenges for miniaturization due to the complicated device architecture. Here we demonstrate reversible electric-field control of nanoscale hydrogenation into VO2 with a tunable insulator-metal transition using a scanning probe. The Pt-coated probe serves as an efficient catalyst to split hydrogen molecules, while the positive-biased voltage accelerates hydrogen ions between the tip and sample surface to facilitate their incorporation, leading to non-volatile transformation from insulating VO2 into conducting HxVO2. Remarkably, a negative-biased voltage triggers dehydrogenation to restore the insulating VO2. This work demonstrates a local and reversible electric-field-controlled insulator-metal transition through hydrogen evolution and presents a versatile pathway to exploit multiple functional devices at the nanoscale.

Electric-field control of tri-state phase transformation with a selective dual-ion switch.

Materials can be transformed from one crystalline phase to another by using an electric field to control ion transfer, in a process that can be harnessed in applications such as batteries, smart windows and fuel cells. Increasing the number of transferrable ion species and of accessible crystalline phases could in principle greatly enrich material functionality. However, studies have so far focused mainly on the evolution and control of single ionic species (for example, oxygen, hydrogen or lithium ions). Here we describe the reversible and non-volatile electric-field control of dual-ion (oxygen and hydrogen) phase transformations, with associated electrochromic and magnetoelectric effects. We show that controlling the insertion and extraction of oxygen and hydrogen ions independently of each other can direct reversible phase transformations among three different material phases: the perovskite SrCoO3-δ (ref. 12), the brownmillerite SrCoO2.5 (ref. 13), and a hitherto-unexplored phase, HSrCoO2.5. By analysing the distinct optical absorption properties of these phases, we demonstrate selective manipulation of spectral transparency in the visible-light and infrared regions, revealing a dual-band electrochromic effect that could see application in smart windows. Moreover, the starkly different magnetic and electric properties of the three phases-HSrCoO2.5 is a weakly ferromagnetic insulator, SrCoO3-δ is a ferromagnetic metal, and SrCoO2.5 is an antiferromagnetic insulator-enable an unusual form of magnetoelectric coupling, allowing electric-field control of three different magnetic ground states. These findings open up opportunities for the electric-field control of multistate phase transformations with rich functionalities.

Freestanding Crystalline ß-Ga2O3 Flexible Membrane Obtained via Lattice Epitaxy Engineering for High-Performance Optoelectronic Device.

Wearable and flexible ß-Ga2O3-based semiconductor devices have attracted considerable attention, due to their outstanding performance and potential application in real-time optoelectronic monitoring and sensing. However, the unavailability of high-quality crystalline and flexible ß-Ga2O3 membranes limits the fabrication of relevant devices. Here, through lattice epitaxy engineering together with the freestanding method, we demonstrate the preparation of a robust bending-resistant and crystalline ß-Ga2O3 (-201) membrane. Based on this, we fabricate a flexible ß-Ga2O3 photodetector device that shows comparable performance in photocurrent responsivity and spectral selectivity to conventional rigid ß-Ga2O3 film-based devices. Moreover, based on the transferred ß-Ga2O3 membrane on a silicon wafer, the PEDOT:PSS/ß-Ga2O3 p-n heterojunction device with self-powered characteristic was constructed, further demonstrating its superior heterogeneous integration ability with other functional materials. Our results not only demonstrate the feasibility of obtaining a high-quality crystalline and flexible ß-Ga2O3 membrane for an integrated device but also provide a pathway to realize flexible optical and electronic applications for other semiconducting materials.

Eight In. Wafer-Scale Epitaxial Monolayer MoS2.

Large-scale, high-quality, and uniform monolayer molybdenum disulfide (MoS2) films are crucial for their applications in next-generation electronics and optoelectronics. Epitaxy is a mainstream technique for achieving high-quality MoS2 films and is demonstrated at a wafer scale up to 4-in. In this study, the epitaxial growth of 8-in. wafer-scale highly oriented monolayer MoS2 on sapphire is reported as with excellent spatial homogeneity, using a specially designed vertical chemical vapor deposition (VCVD) system. Field effect transistors (FETs) based on the as-grown 8-in. wafer-scale monolayer MoS2 film are fabricated and exhibit high performances, with an average mobility and an on/off ratio of 53.5 cm2 V-1 s-1 and 107, respectively. In addition, batch fabrication of logic devices and 11-stage ring oscillators are also demonstrated, showcasing excellent electrical functions. This work may pave the way of MoS2 in practical industry-scale applications.

Epitaxy of wafer-scale single-crystal MoS2 monolayer via buffer layer control.

Monolayer molybdenum disulfide (MoS2), an emergent two-dimensional (2D) semiconductor, holds great promise for transcending the fundamental limits of silicon electronics and continue the downscaling of field-effect transistors. To realize its full potential and high-end applications, controlled synthesis of wafer-scale monolayer MoS2 single crystals on general commercial substrates is highly desired yet challenging. Here, we demonstrate the successful epitaxial growth of 2-inch single-crystal MoS2 monolayers on industry-compatible substrates of c-plane sapphire by engineering the formation of a specific interfacial reconstructed layer through the S/MoO3 precursor ratio control. The unidirectional alignment and seamless stitching of MoS2 domains across the entire wafer are demonstrated through cross-dimensional characterizations ranging from atomic- to centimeter-scale. The epitaxial monolayer MoS2 single crystal shows good wafer-scale uniformity and state-of-the-art quality, as evidenced from the ~100% phonon circular dichroism, exciton valley polarization of ~70%, room-temperature mobility of ~140 cm2v-1s-1, and on/off ratio of ~109. Our work provides a simple strategy to produce wafer-scale single-crystal 2D semiconductors on commercial insulator substrates, paving the way towards the further extension of Moore's law and industrial applications of 2D electronic circuits.

Unveiling Strong Ion-Electron-Lattice Coupling and Electronic Antidoping in Hydrogenated Perovskite Nickelate.

Despite being highly promising for applications in emergent electronic devices, decoding both the ion-electron-lattice coupling in correlated materials at the atomic scale and the electronic band structure remains a big challenge due to the strong and complex correlation among these degrees of freedom. Here, taking an epitaxial thin film of perovskite nickelate NdNiO3 as a model system, hydrogen-ion-induced giant lattice distortion and enhanced NiO6 octahedra tilting/rotation are demonstrated, which leads to a new robust hydrogenated HNdNiO3 phase with lattice expansion larger than 10% on a series of substrates. Moreover, under the effect of ion-electron synergistic doping, it is found that the proposed electronic antidoping, i.e., the doped electrons mainly fill the ground-state oxygen 2p holes instead of changing the Ni oxidation state from Ni3+ to Ni2+ , dominates the metal-insulator transition. Meanwhile, lattice modification with enhanced Ni-O-Ni bond tilting or rotation mainly modifies the orbital density of states near the Fermi level. Last, by electric-field-controlled hydrogen-ion intercalation and its strong coupling to the lattice and electron charge, selective micrometer-scale patterns with distinct structural and electronic states are fabricated. The results provide direct evidence for a strong ion-electron-lattice coupling in correlated physics and exhibit its potential applications in designing novel materials and devices.

Effect of lattice mismatch on film morphology of the quasi-one dimensional conductor K0.3MoO3.

High quality epitaxial thin films of the quasi-one dimensional conductor K0.3MoO3 have been successfully grown on SrTiO3(100), SrTiO3(110), and SrTiO3(510) substrates via pulsed laser deposition. Scanning electron microscopy revealed quasi-one dimensional rod-shaped structures parallel to the substrate surface, and the crystal structure was verified by using X-ray diffraction. The temperature dependence of the resistivity for the K0.3MoO3 thin films demonstrates a metal-to-semiconductor transition at about 180 K. Highly anisotropic resistivity was also observed for films grown on SrTiO3(510).

Tracing the ionic evolution during ILG induced phase transformation in strontium cobaltite thin films.

Ionic liquid gating (ILG) that drives the ions incorporate into or extract from the crystal lattice, has emerged as a new pathway to design materials. Although many intriguing emergent phenomena, novel physical properties and functionalities have been obtained, the gating mechanism governing the ion and charge transport remains unexplored. Here, by using the model system of brownmillerite SrCoO2.5 and the corresponding electric-field controlled tri-state phase transformation among the pristine SrCoO2.5, hydrogenated HSrCoO2.5 and oxidized perovskite SrCoO3-δ through the dual ion switch, the ionic diffusion and electronic transport processes were carefully investigated. Through controlling gating experiment by design, we find out that the collaborative interaction between charge transport and ion diffusion plays an essential role to prompt the hydrogen or oxygen ions incorporate into the crystal lattice of SrCoO2.5, and therefore leading to formation of new phases. At region closer to the electrode, the electron can shuttle more readily in (out) the material, correspondingly the incorporation of hydrogen (oxygen) ions and phase transformation is largely affiliated. With the compensated charge of electron as well as the reaction front gradually moving away from the electrode, the new phases would be developed successively across the entire thin film. This result unveils the underlying mechanism in the electric-field control of ionic incorporation and extraction, and therefore provides important strategy to achieve high efficient design of material functionalities in complex oxide materials.

One-pot synthesis of Ag@SiO(2)@Ag sandwich nanostructures.

Ag@SiO(2)@Ag sandwich nanostructures were prepared by a facile one-pot synthesis method. The Ag core, SiO(2) shell and Ag nanoparticle shell were all synthesized with polyvinylpyrrolidone, catalysed by ammonia, in the one-pot reaction. The polyvinylpyrrolidone, acting as a smart reducing agent, reduced the Ag(+) to Ag cores and Ag shells separately. Furthermore, the polyvinylpyrrolidone served as a protective agent to prevent the silver cores from aggregating. The SiO(2) shell and outer layer Ag nanoparticles were obtained when tetraethyl orthosilicate and ammonia were added to the silver core solution. Ammonia, acting as the catalyst, accelerated the hydrolysis of the tetraethyl orthosilicate to SiO(2), which coated the silver cores. Furthermore, Ag(NH(3))(2)(+) ions were formed when aqueous ammonia was added to the solution, which increased the reduction capability. Then the polyvinylpyrrolidone reduced the Ag(NH(3))(2)(+) ions to small Ag nanoparticles on the surface of the Ag@SiO(2) and formed Ag@SiO(2)@Ag sandwich structures with a standard deviation of less than 4%. This structure effectively prevented the Ag nanoparticles on the silica surface from aggregating. Furthermore, the Ag@SiO(2)@Ag sandwich structures showed good catalysis properties due to the large surface area/volume value and activity of surface atoms of Ag particles.

Reversible manipulation of the magnetic state in SrRuO3 through electric-field controlled proton evolution.

Ionic substitution forms an essential pathway to manipulate the structural phase, carrier density and crystalline symmetry of materials via ion-electron-lattice coupling, leading to a rich spectrum of electronic states in strongly correlated systems. Using the ferromagnetic metal SrRuO3 as a model system, we demonstrate an efficient and reversible control of both structural and electronic phase transformations through the electric-field controlled proton evolution with ionic liquid gating. The insertion of protons results in a large structural expansion and increased carrier density, leading to an exotic ferromagnetic to paramagnetic phase transition. Importantly, we reveal a novel protonated compound of HSrRuO3 with paramagnetic metallic as ground state. We observe a topological Hall effect at the boundary of the phase transition due to the proton concentration gradient across the film-depth. We envision that electric-field controlled protonation opens up a pathway to explore novel electronic states and material functionalities in protonated material systems.

Electric Field-Controlled Multistep Proton Evolution in H x SrCoO2.5 with Formation of H-H Dimer.

Ionic evolution-induced phase transformation can lead to wide ranges of novel material functionalities with promising applications. Here, using the gating voltage during ionic liquid gating as a tuning knob, the brownmillerite SrCoO2.5 is transformed into a series of protonated H x SrCoO2.5 phases with distinct hydrogen contents. The unexpected electron to charge-neutral doping crossover along with the increase of proton concentration from x = 1 to 2 suggests the formation of exotic charge neutral H-H dimers for higher proton concentration, which is directly visualized at the vacant tetrahedron by scanning transmission electron microscopy and then further supported by first principles calculations. Although the H-H dimers cause no change of the valency of Co2+ ions, they result in clear enhancement of electronic bandgap and suppression of magnetization through lattice expansion. These results not only reveal a hydrogen chemical state beyond anion and cation within the complex oxides, but also suggest an effective pathway to design functional materials through tunable ionic evolution.

Manipulate the Electronic and Magnetic States in NiCo2 O4 Films through Electric-Field-Induced Protonation at Elevated Temperature.

Ionic-liquid-gating- (ILG-) induced proton evolution has emerged as a novel strategy to realize electron doping and manipulate the electronic and magnetic ground states in complex oxides. While the study of a wide range of systems (e.g., SrCoO2.5 , VO2 , WO3 , etc.) has demonstrated important opportunities to incorporate protons through ILG, protonation remains a big challenge for many others. Furthermore, the mechanism of proton intercalation from the ionic liquid/solid interface to whole film has not yet been revealed. Here, with a model system of inverse spinel NiCo2 O4 , an increase in system temperature during ILG forms a single but effective method to efficiently achieve protonation. Moreover, the ILG induces a novel phase transformation in NiCo2 O4 from ferrimagnetic metallic into antiferromagnetic insulating with protonation at elevated temperatures. This study shows that environmental temperature is an efficient tuning knob to manipulate ILG-induced ionic evolution.

Publisher Correction: Electric-field control of ferromagnetism through oxygen ion gating.

In the original version of this Article, Figs. 4c and 4d contained incorrectly sized error bars. This has now been corrected in both the PDF and HTML versions of the Article.

Engineering magnetism at functional oxides interfaces: manganites and beyond.

The family of transition metal oxides (TMOs) is a large class of magnetic materials that has been intensively studied due to the rich physics involved as well as the promising potential applications in next generation electronic devices. In TMOs, the spin, charge, orbital and lattice are strongly coupled, and significant advances have been achieved to engineer the magnetism by different routes that manipulate these degrees of freedom. The family of manganites is a model system of strongly correlated magnetic TMOs. In this review, using manganites thin films and the heterostructures in conjunction with other TMOs as model systems, we review the recent progress of engineering magnetism in TMOs. We first discuss the role of the lattice that includes the epitaxial strain and the interface structural coupling. Then we look into the role of charge, focusing on the interface charge modulation. Having demonstrated the static effects, we continue to review the research on dynamical control of magnetism by electric field. Next, we review recent advances in heterostructures comprised of high T c cuprate superconductors and manganites. Following that, we discuss the emergent magnetic phenomena at interfaces between 3d TMOs and 5d TMOs with strong spin-orbit coupling. Finally, we provide our outlook for prospective future directions.

Electric-Field-Controlled Phase Transformation in WO3 Thin Films through Hydrogen Evolution.

Field-effect transistors with ionic-liquid gating (ILG) have been widely employed and have led to numerous intriguing phenomena in the last decade, due to the associated excellent carrier-density tunability. However, the role of the electrochemical effect during ILG has become a heavily debated topic recently. Herein, using ILG, a field-induced insulator-to-metal transition is achieved in WO3 thin films with the emergence of structural transformations of the whole films. The subsequent secondary-ion mass spectrometry study provides solid evidence that electrochemically driven hydrogen evolution dominates the discovered electrical and structural transformation through surface absorption and bulk intercalation.

Atomic-resolution imaging of electrically induced oxygen vacancy migration and phase transformation in SrCoO2.5-σ.

Oxygen ion transport is the key issue in redox processes. Visualizing the process of oxygen ion migration with atomic resolution is highly desirable for designing novel devices such as oxidation catalysts, oxygen permeation membranes, and solid oxide fuel cells. Here we show the process of electrically induced oxygen migration and subsequent reconstructive structural transformation in a SrCoO2.5-σ film by scanning transmission electron microscopy. We find that the extraction of oxygen from every second SrO layer occurs gradually under an electrical bias; beyond a critical voltage, the brownmillerite units collapse abruptly and evolve into a periodic nano-twined phase with a high c/a ratio and distorted tetrahedra. Our results show that oxygen vacancy rows are not only natural oxygen diffusion channels, but also preferred sites for the induced oxygen vacancies. These direct experimental results of oxygen migration may provide a common mechanism for the electrically induced structural evolution of oxides.Information on how oxygen ions transport is crucial to understanding field-induced phase transformations in materials. Here, Zhang et al. directly image atomic-scale oxygen migration and the subsequent structural reconstruction in a SrCoO2.5-σ film in the presence of an electric field.

Electric-field control of ferromagnetism through oxygen ion gating.

Electric-field-driven oxygen ion evolution in the metal/oxide heterostructures emerges as an effective approach to achieve the electric-field control of ferromagnetism. However, the involved redox reaction of the metal layer typically requires extended operation time and elevated temperature condition, which greatly hinders its practical applications. Here, we achieve reversible sub-millisecond and room-temperature electric-field control of ferromagnetism in the Co layer of a Co/SrCoO2.5 system accompanied by bipolar resistance switching. In contrast to the previously reported redox reaction scenario, the oxygen ion evolution occurs only within the SrCoO2.5 layer, which serves as an oxygen ion gating layer, leading to modulation of the interfacial oxygen stoichiometry and magnetic state. This work identifies a simple and effective pathway to realize the electric-field control of ferromagnetism at room temperature, and may lead to applications that take advantage of both the resistance switching and magnetoelectric coupling.

Nearly constant electrical resistance over large temperature range in Cu3NMx (M = Cu, Ag, Au) compounds.

Electrical resistance is a material property that usually varies enormously with temperature. Constant electrical resistivity over large temperature range has been rarely measured in a single solid. Here we report the growth of Cu3NMx (M = Cu, Ag, Au) compound films by magnetron sputtering, aiming at obtaining single solids of nearly constant electrical resistance in some temperature ranges. The increasing interstitial doping of cubic Cu3N lattice by extra metal atoms induces the semiconductor-to-metal transition in all the three systems. Nearly constant electrical resistance over 200 K, from room temperature downward, was measured in some semimetallic Cu3NMx samples, resulting from opposite temperature dependence of carrier density and carrier mobility, as revealed by Hall measurement. Cu3NAgx samples have the best performance with regard to the range of both temperature and doping level wherein a nearly constant electrical resistance can be realized. This work can inspire the search of other materials of such a quality.