Mixed-Orbital Charge Transport in N-Shaped Benzene- and Pyrazine-Fused Organic Semiconductors.

The hole-carrier transport of organic semiconductors is widely known to occur via intermolecular orbital overlaps of the highest occupied molecular orbitals (HOMO), though the effect of other occupied molecular orbitals on charge transport is rarely investigated. In this work, we first demonstrate evidence of a mixed-orbital charge transport concept in the high-performance N-shaped decyl-dinaphtho[2,3-d:2',3'-d']benzo[1,2-b:4,5-b']dithiophene (C10-DNBDT-NW), where electronic couplings of the second HOMO (SHOMO) and third HOMO (THOMO) also contribute to the charge transport. We then present the molecular design of an N-shaped bis(naphtho[2',3':4,5]thieno)[2,3-b:2',3'-e]pyrazine (BNTP) π-electron system to induce more pronounced mixed-orbital charge transport by incorporating the pyrazine moiety. An effective synthetic strategy for the pyrazine-fused extended π-electron system is developed. With substituent engineering, the favorable two-dimensional herringbone assembly can be obtained with BNTP, and the decylphenyl-substituted BNTP (C10Ph-BNTP) demonstrates large electronic couplings involving the HOMO, SHOMO, and THOMO in the herringbone assembly. C10Ph-BNTP further shows enhanced mixed-orbital charge transport when the electronic couplings of all three occupied molecular orbitals are taken into consideration, which results in a high hole mobility up to 9.6 cm2 V-1 s-1 in single-crystal thin-film organic field-effect transistors. The present study provides insights into the contribution of HOMO, SHOMO, and THOMO to the mixed-orbital charge transport of organic semiconductors.

Bent-Shaped p-Type Small-Molecule Organic Semiconductors: A Molecular Design Strategy for Next-Generation Practical Applications.

Significant progress has been made in both molecular design and fundamental scientific understanding of organic semiconductors (OSCs) in recent years. Suitable charge-carrier mobilities (µ) have been obtained by many high-performance OSCs (µ > 10 cm2 V-1 s-1), but drawbacks remain, including low solution processability and poor thermal durability. In addition, since aggregation of OSCs involves weak intermolecular interactions, the molecules are perpetually in thermal motion, even in the solid state, which disrupts charge-carrier transport. These issues limit potential applications of OSCs. The present work examines a molecular design for hole-transporting (p-type) OSCs based on the "bent-shaped" geometry with specific molecular orbital configurations, which aims to enhance effective intermolecular orbital overlaps, stabilize crystal phases, suppress detrimental molecular motions in the solid state, and improve solution processability. The results indicated that such OSCs have high µ and suitable solution processability, and are resistant to ambient and thermal conditions, making them suitable for practical applications.

Alkyl-Substituted Selenium-Bridged V-Shaped Organic Semiconductors Exhibiting High Hole Mobility and Unusual Aggregation Behavior.

Toward the development of high-performance organic semiconductors (OSCs), carrier mobility is the most important requirement for next-generation OSC-based electronics. The strategy is that OSCs consisting of a highly extended π-electron core exhibit two-dimensional (2D) aggregated structures to offer effective charge transport. However, such OSCs, in general, show poor solubility in common organic solvents, resulting in limited solution processability. This is a critical trade-off between the development of OSCs with simultaneous high carrier mobility and suitable solubility. To address this issue, herein, five-membered ring-fused selenium-bridged V-shaped binaphthalene with decyl substituents (C10-DNS-VW) is developed and synthesized by an efficient method. C10-DNS-VW exhibits significantly high solubility for solution processes. Notably, C10-DNS-VW forms a one-dimensional π-stacked packing motif (1D motif) and a 2D herringbone (HB) packing motif (2D motif), depending on the crystal growth condition. On the other hand, the fabrication of thin films by means of both solution process and vacuum deposition techniques forms only the 2D HB motif. External stress tests such as heating and exposure to solvent vapor indicated that 1D and 2D motifs could be synergistically induced by the total balance of intermolecular interactions. Finally, the single-crystalline films of C10-DNS-VW by solution process exhibit carrier mobility up to 11 cm2 V-1 s-1 with suitable transistor stability under ambient conditions for more than two months, indicating that C10-DNS-VW is one of the most promising candidates for breaking the trade-off in the field of solution-processed technologies.

Organometallic Bonding in an Ullmann-Type On-Surface Chemical Reaction Studied by High-Resolution Atomic Force Microscopy.

The on-surface Ullmann-type chemical reaction synthesizes polymers by linking carbons of adjacent molecules on solid surfaces. Although an organometallic compound is recently identified as the reaction intermediate, little is known about the detailed structure of the bonded organometallic species and its influence on the molecule and the reaction. Herein atomic force microscopy at low temperature is used to study the reaction with 3,9-diiododinaphtho[2,3-b:2',3'-d]thiophene (I-DNT-VW), which is polymerized on Ag(111) in vacuum. Thermally sublimated I-DNT-VW picks up a Ag surface atom, forming a CAg bond at one end after removing an iodine. The CAg bond is usually short-lived, and a CAgC organometallic bond immediately forms with an adjacent molecule. The existence of the bonded Ag atoms strongly affects the bending angle and adsorption height of the molecular unit. Density functional theory calculations reveal the bending mechanism, which reveals that charge from the terminus of the molecule is transferred via the Ag atom into the organometallic bond and strengths the local adsorption to the substrate. Such deformations vanish when the Ag atoms are removed by annealing and CC bonds are established.

Naphtho[2,1-b:6,5-b']difuran: a versatile motif available for solution-processed single-crystal organic field-effect transistors with high hole mobility.

We here report naphtho[2,1-b:6,5-b']difuran derivatives as new p-type semiconductors that achieve hole mobilities of up to 3.6 cm(2) V(-1) s(-1) along with high I(on)/I(off) ratios in solution-processed single-crystal organic field-effect transistors. These features originate from the dense crystal packing and the resulting large intermolecular π-orbital overlap as well as from the small reorganization energy, all of which originate from the small radius of an oxygen atom.

Modular synthesis of 1H-indenes, dihydro-s-indacene, and diindenoindacene--a carbon-bridged p-phenylenevinylene congener.

A variety of 1H-indenes, dihydro-s-indacenes, and diindenoindacenes, carbon-bridged phenylenevinylene derivatives, can be synthesized in good to high yields using as a synthetic module a 3-lithioindene compound made available by reductive cyclization of an alkynylbenzene derivative. The planar analogues of oligophenylenevinylene compounds thus synthesized show physical properties beneficial for use as ambipolar organic semiconductor materials.

Wafer-scale, layer-controlled organic single crystals for high-speed circuit operation.

Two-dimensional (2D) layered semiconductors are a novel class of functional materials that are an ideal platform for electronic applications, where the whole electronic states are directly modified by external stimuli adjacent to their electronic channels. Scale-up of the areal coverage while maintaining homogeneous single crystals has been the relevant challenge. We demonstrate that wafer-size single crystals composed of an organic semiconductor bimolecular layer with an excellent mobility of 10 cm2 V-1 s-1 can be successfully formed via a simple one-shot solution process. The well-controlled process to achieve organic single crystals composed of minimum molecular units realizes unprecedented low contact resistance and results in high-speed transistor operation of 20 MHz, which is twice as high as the common frequency used in near-field wireless communication. The capability of the solution process for scale-up coverage of high-mobility organic semiconductors opens up the way for novel 2D nanomaterials to realize products with large-scale integrated circuits on film-based devices.

Zigzag-Elongated Fused π-Electronic Core: A Molecular Design Strategy to Maximize Charge-Carrier Mobility.

Printed and flexible electronics requires solution-processable organic semiconductors with a carrier mobility (µ) of ≈10 cm2 V-1 s-1 as well as high chemical and thermal durability. In this study, chryseno[2,1-b:8,7-b']dithiophene (ChDT) and its derivatives, which have a zigzag-elongated fused π-electronic core (π-core) and a peculiar highest occupied molecular orbital (HOMO) configuration, are reported as materials with conceptually new semiconducting π-cores. ChDT and its derivatives are prepared by a versatile synthetic procedure. A comprehensive investigation reveals that the ChDT π-core exhibits increasing structural stability in the bulk crystal phase, and that it is unaffected by a variation of the transfer integral, induced by the perpetual molecular motion of organic materials owing to the combination of its molecular shape and its particular HOMO configuration. Notably, ChDT derivatives exhibit excellent chemical and thermal stability, high charge-carrier mobility under ambient conditions (µ ≤ 10 cm2 V-1 s-1), and a crystal phase that is highly stable, even at temperatures above 250 °C.

Precise engineering of quantum dot array coupling through their barrier widths.

Quantum dots are known to confine electrons within their structure. Whenever they periodically aggregate into arrays and cooperative interactions arise, novel quantum properties suitable for technological applications show up. Control over the potential barriers existing between neighboring quantum dots is therefore essential to alter their mutual crosstalk. Here we show that precise engineering of the barrier width can be experimentally achieved on surfaces by a single atom substitution in a haloaromatic compound, which in turn tunes the confinement properties through the degree of quantum dot intercoupling. We achieved this by generating self-assembled molecular nanoporous networks that confine the two-dimensional electron gas present at the surface. Indeed, these extended arrays form up on bulk surface and thin silver films alike, maintaining their overall interdot coupling. These findings pave the way to reach full control over two-dimensional electron gases by means of self-assembled molecular networks.Arrays of quantum dots can exhibit a variety of quantum properties, being sensitive to their spacing. Here, the authors fine tune interdot coupling using hexagonal molecular networks in which the dots are separated by single or double haloaromatic compounds, structurally identical but for a single atom.

Suppressing molecular vibrations in organic semiconductors by inducing strain.

Organic molecular semiconductors are solution processable, enabling the growth of large-area single-crystal semiconductors. Improving the performance of organic semiconductor devices by increasing the charge mobility is an ongoing quest, which calls for novel molecular and material design, and improved processing conditions. Here we show a method to increase the charge mobility in organic single-crystal field-effect transistors, by taking advantage of the inherent softness of organic semiconductors. We compress the crystal lattice uniaxially by bending the flexible devices, leading to an improved charge transport. The mobility increases from 9.7 to 16.5 cm(2) V(-1) s(-1) by 70% under 3% strain. In-depth analysis indicates that compressing the crystal structure directly restricts the vibration of the molecules, thus suppresses dynamic disorder, a unique mechanism in organic semiconductors. Since strain can be easily induced during the fabrication process, we expect our method to be exploited to build high-performance organic devices.

The hydrogen/deuterium isotope effect of the host material on the lifetime of organic light-emitting diodes.

The hydrogen/deuterium primary kinetic isotope effect provides useful information about the degradation mechanism of OLED host materials. Thus, replacement of labile C-H bonds in the host with C-D bonds increases the device lifetime by a factor of five without loss of efficiency, and replacement with C-C bonds by a factor of 22.5.

High-performance solution-processable N-shaped organic semiconducting materials with stabilized crystal phase.

N-shaped organic semiconductors are synthesized via four steps from a readily available starting material. Such semiconductors exhibit preferable ionization potential for p-type operation, thermally stable crystalline phase over 200 °C, and high carrier mobility up to 16 cm(2) V(-1) s(-1) (12.1 cm(2) V(-1) s(-1) on average) with small threshold voltages in solution-crystallized field-effect transistors.

Furan fused V-shaped organic semiconducting materials with high emission and high mobility.

We report a facile synthetic protocol for preparation of dinaphtho[2,3-b:2',3'-d]furan (DNF-V) derivatives. DNF-V derivatives showed high emissive behaviour in solid. A solution-crystallized transistor based on alkylated DNF-V derivatives showed an excellent carrier mobility of up to 1.3 cm(2) V(-1) s(-1), thereby proving to be a new solution-processable active organic semiconductor with high emission and high mobility.

V-shaped organic semiconductors with solution processability, high mobility, and high thermal durability.

V-shaped organic semiconductors have been designed and synthesized via a large-scale applicable synthetic route. Solution-crystallized films based on such molecules have demonstrated high-performance transistor properties with maximum mobilities of up to 9.5 cm(2) V(-1) s(-1) as well as pronounced thermal durability of up to 150 °C inherent in the V-shaped cores.

Carbazolyl benzo[1,2-b:4,5-b']difuran: an ambipolar host material for full-color organic light-emitting diodes.

We have designed an ambipolar material, 3,7-bis[4-(N-carbazolyl)-phenyl]-2,6-diphenylbenzo[1,2-b:4,5-b']difuran (CZBDF), and synthesized it by zinc-mediated double cyclization. Its physical properties clarified that CZBDF possesses a wide-gap character, well-balanced and high hole and electron mobilities of larger than 10(-3) cm(2) V(-1) s(-1), and a high thermal stability. Using CZBDF as a host material for heterojunction OLED devices, a full range of visible emission was obtained. Notably, CZBDF also enabled us to fabricate RGB-emitting homojunction OLEDs, with performances comparable or superior to the heterojunction devices composed of several materials.

Modular synthesis of polybenzo[b]silole compounds for hole-blocking material in phosphorescent organic light emitting diodes.

A diversity-oriented synthetic strategy allowed us to design a series of conjugated molecules containing multiple benzosilole units that can be utilized as efficient hole-blocking materials for phosphorescent organic light emitting diodes (OLEDs). Some of these compounds showed a performance surpassing that of the current standard, bathocuproine. The new compounds were easily synthesized in a modular fashion from a previously reported 3-stannyl benzosilole building unit. Studies on the properties of these compounds in solution and in the solid state indicate that they possess high electron affinity, high ionization potential, and form stable amorphous films that show high electron-drift mobility. The correlation between their molecular properties and the efficiency of the OLED device performance is also investigated.