A Miniaturized On-Chip Colorimeter for Detecting NPK Elements.

Recently, precision agriculture has become a globally attractive topic. As one of the most important factors, the soil nutrients play an important role in estimating the development of precision agriculture. Detecting the content of nitrogen, phosphorus and potassium (NPK) elements more efficiently is one of the key issues. In this paper, a novel chip-level colorimeter was fabricated to detect the NPK elements for the first time. A light source-microchannel photodetector in a sandwich structure was designed to realize on-chip detection. Compared with a commercial colorimeter, all key parts are based on MEMS (Micro-Electro-Mechanical System) technology so that the volume of this on-chip colorimeter can be minimized. Besides, less error and high precision are achieved. The cost of this colorimeter is two orders of magnitude less than that of a commercial one. All these advantages enable a low-cost and high-precision sensing operation in a monitoring network. The colorimeter developed herein has bright prospects for environmental and biological applications.

Cost-effective, transfer-free, flexible resistive random access memory using laser-scribed reduced graphene oxide patterning technology.

Laser scribing is an attractive reduced graphene oxide (rGO) growth and patterning technology because the process is low-cost, time-efficient, transfer-free, and flexible. Various laser-scribed rGO (LSG) components such as capacitors, gas sensors, and strain sensors have been demonstrated. However, obstacles remain toward practical application of the technology where all the components of a system are fabricated using laser scribing. Memory components, if developed, will substantially broaden the application space of low-cost, flexible electronic systems. For the first time, a low-cost approach to fabricate resistive random access memory (ReRAM) using laser-scribed rGO as the bottom electrode is experimentally demonstrated. The one-step laser scribing technology allows transfer-free rGO synthesis directly on flexible substrates or non-flat substrates. Using this time-efficient laser-scribing technology, the patterning of a memory-array area up to 100 cm(2) can be completed in 25 min. Without requiring the photoresist coating for lithography, the surface of patterned rGO remains as clean as its pristine state. Ag/HfOx/LSG ReRAM using laser-scribing technology is fabricated in this work. Comprehensive electrical characteristics are presented including forming-free behavior, stable switching, reasonable reliability performance and potential for 2-bit storage per memory cell. The results suggest that laser-scribing technology can potentially produce more cost-effective and time-effective rGO-based circuits and systems for practical applications.

A flexible piezoresistive strain sensor based on laser scribed graphene oxide on polydimethylsiloxane.

Flexible strain sensors are an important constituent in soft robotics, health care devices, and in the defence industry. Strain sensors are characterized by their sensitivity (gauge factor-GF) and sensing range. In flexible strain sensors, simultaneously achieving consistency and high sensitivity has always been challenging. A number of materials and their derivatives have been explored to achieve balanced sensitivity with respect to sensing range with limited results. In this work, a low-cost flexible piezoresistive strain sensor has been developed using reduced graphene oxide (rGO) on polydimethylsiloxane (PDMS). The reduction has been performed using laser scribing, which enables the fabrication of arbitrary structures. After lead-out, the devices were again sandwiched in a layer of PDMS to secure the structures before performing their testing using a locally developed testing rig. Compared to previously reported graphene strain sensors, the devices fabricated in this work show relatively high GF with respect to sensing range. The GF calculated for stretching, bending and torsion was 12.1, 3.5, and 90.3 respectively, for the strain range of 0-140%, 0-130%, and 0-11.1%. A hand test was performed for the detection of joint movement. Change of resistance has been observed indicating muscle motion.

Fabrication and Characterization of a Thermophone Based on Laser-Scribed Graphene Intercalated with Multiwalled Carbon Nanotubes.

The low sound pressure level and high operating voltages of thermophones have limited their applications in the past. However, in recent years, utilizing nanomaterials in thermophones has improved their efficiency and applicability. Nanomaterials, especially carbon nanotubes and graphene, have the advantage of low heat capacity per unit area (HCPUA) and high electrical and thermal conductivity. Therefore, they require a low electrical input power and generate a high sound pressure level (SPL) by efficiently transferring heat to the surrounding fluid. Laser-scribed graphene (LSG) can generate smooth spectra acoustic emissions over a wide range of frequencies by means of thermoacoustic (TA) emission. In this work, a thermophone based on LSG intercalated with multiwalled carbon nanotubes (MWCNTs) is proposed. The effects of varying input power, duty cycle percentage and measuring distance on the sound pressure level (SPL) of thermophones are studied to extract maximum efficiency. The achieved SPL of LSG, normalized to the input power, has increased by approximately 11 dB by intercalating it with MWCNTs, which shows that our proposed material can be a potential candidate for an efficient thermophone.

A comprehensive investigation of MoO3 based resistive random access memory.

The bipolar resistive switching of molybdenum oxide is deliberated while molybdenum and nickel are used as bottom and top electrodes, respectively, to present a device with resistive random access memory (RRAM) characteristics. For the trilayered structure, the SET voltage lies around 3.3 V and RESET voltage is observed to be in the -2.3 V to -2.7 V range. The conduction mechanism has been observed and revealed for the Metal-Insulator-Metal (MIM) structure which is a space-charge-limited current mechanism that follows both ohmic conduction and Child's law. Furthermore, a theoretical study has been performed by using density functional theory (DFT) to evaluate the resistance switching role of molybdenum oxide (MoO3). The structure has been studied with oxygen vacancy sites induced into the system which shows the reduction in bandgap, whereas an indirect bandgap of 1.9 eV and a direct bandgap of 3.1 eV are calculated for molybdenum oxide. Conclusively, the formation of a conduction filament which is fundamental for resistive switching has been explained through band structure and density of states per eV for oxygen vacancy structures of molybdenum oxide. The current work presents an in-depth understanding of the resistive switching mechanism involved in MoO3 based resistive random access memory devices for future data storage applications.

A hardware Markov chain algorithm realized in a single device for machine learning.

There is a growing need for developing machine learning applications. However, implementation of the machine learning algorithm consumes a huge number of transistors or memory devices on-chip. Developing a machine learning capability in a single device has so far remained elusive. Here, we build a Markov chain algorithm in a single device based on the native oxide of two dimensional multilayer tin selenide. After probing the electrical transport in vertical tin oxide/tin selenide/tin oxide heterostructures, two sudden current jumps are observed during the set and reset processes. Furthermore, five filament states are observed. After classifying five filament states into three states of the Markov chain, the probabilities between each states show convergence values after multiple testing cycles. Based on this device, we demo a fixed-probability random number generator within 5% error rate. This work sheds light on a single device as one hardware core with Markov chain algorithm.

A novel artificial synapse with dual modes using bilayer graphene as the bottom electrode.

Resistive Random Access Memory (RRAM) shows great potential to be used as an artificial synapse for neuromorphic applications. The resistance can be gradually reduced during reset, which can enable enough states to mimic the "forgetting" process. However, the abrupt set (Mode I) cannot generate enough states to mimic the "learning" process, which results in depression-only behavior. In this work, we introduce another mode (Mode II) in an Al/AlOx/graphene 'RRAM' stack by using oxygen vacancies as trapping centers and bottom electrode bilayer graphene as the channel material. In this way, since the pulse can gradually create the oxygen vacancies, post-synaptic current (PSC) can be gradually potentiated or depressed. By introducing Mode II, we can realize 166 potentiation states, which is higher than the previously reported conventional RRAM with insufficient potentiation states due to the abrupt set. Moreover, Mode II can help realize an inhibitory synapse. By combining modes I and II, we can realize both excitatory and inhibitory synapses in a single device. This work shows great potential to enable neuromorphic computations with greater learning and reconfigurability.

3D Stretchable Arch Ribbon Array Fabricated via Grayscale Lithography.

Microstructures with flexible and stretchable properties display tremendous potential applications including integrated systems, wearable devices and bio-sensor electronics. Hence, it is essential to develop an effective method for fabricating curvilinear and flexural microstructures. Despite significant advances in 2D stretchable inorganic structures, large scale fabrication of unique 3D microstructures at a low cost remains challenging. Here, we demonstrate that the 3D microstructures can be achieved by grayscale lithography to produce a curved photoresist (PR) template, where the PR acts as sacrificial layer to form wavelike arched structures. Using plasma-enhanced chemical vapor deposition (PECVD) process at low temperature, the curved PR topography can be transferred to the silicon dioxide layer. Subsequently, plasma etching can be used to fabricate the arched stripe arrays. The wavelike silicon dioxide arch microstructure exhibits Young modulus and fracture strength of 52 GPa and 300 MPa, respectively. The model of stress distribution inside the microstructure was also established, which compares well with the experimental results. This approach of fabricating a wavelike arch structure may become a promising route to produce a variety of stretchable sensors, actuators and circuits, thus providing unique opportunities for emerging classes of robust 3D integrated systems.

A point acoustic device based on aluminum nanowires.

A point Electrical Thermal Acoustic (ETA) device based on aluminum nanowire contacts is designed and fabricated. Interdigitated structural aluminum nanowires are released from the substrate by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE). By releasing the interdigitated structure, the nanowires contact each other at approximately 1 mm above the wafer, forming a Point Contact Structure (PCS). It is found that the PCS acoustic device realizes high efficiency when a biased AC signal is applied. The PCS acoustic device reaches a sound pressure level as high as 67 dB at a distance of 1 cm with 74 mW AC input. The power spectrum is flat, ranging from 2 kHz to 20 kHz with a less than ±3 dB fluctuation. The highest normalized Sound Pressure Level (SPL) of the point contact structure acoustic device is 18 dB higher than the suspended aluminum wire acoustic device. Comparisons between the PCS acoustic device and the Suspended Aluminum Nanowire (SAN) acoustic device illustrate that the PCS acoustic device has a flatter power spectrum within the 20 kHz range, and enhances the SPL at a lower frequency. Enhancing the response at lower frequencies is extremely useful, which may enable earphone and loudspeaker applications within the frequency range of the human ear with the help of pulse density modulation.

A spectrally tunable all-graphene-based flexible field-effect light-emitting device.

The continuous tuning of the emission spectrum of a single light-emitting diode (LED) by an external electrical bias is of great technological significance as a crucial property in high-quality displays, yet this capability has not been demonstrated in existing LEDs. Graphene, a tunable optical platform, is a promising medium to achieve this goal. Here we demonstrate a bright spectrally tunable electroluminescence from blue (∼450 nm) to red (∼750 nm) at the graphene oxide/reduced-graphene oxide interface. We explain the electroluminescence results from the recombination of Poole-Frenkel emission ionized electrons at the localized energy levels arising from semi-reduced graphene oxide, and holes from the top of the π band. Tuning of the emission wavelength is achieved by gate modulation of the participating localized energy levels. Our demonstration of current-driven tunable LEDs not only represents a method for emission wavelength tuning but also may find applications in high-quality displays.

A graphene-based resistive pressure sensor with record-high sensitivity in a wide pressure range.

Pressure sensors are a key component in electronic skin (e-skin) sensing systems. Most reported resistive pressure sensors have a high sensitivity at low pressures (<5 kPa) to enable ultra-sensitive detection. However, the sensitivity drops significantly at high pressures (>5 kPa), which is inadequate for practical applications. For example, actions like a gentle touch and object manipulation have pressures below 10 kPa, and 10-100 kPa, respectively. Maintaining a high sensitivity in a wide pressure range is in great demand. Here, a flexible, wide range and ultra-sensitive resistive pressure sensor with a foam-like structure based on laser-scribed graphene (LSG) is demonstrated. Benefitting from the large spacing between graphene layers and the unique v-shaped microstructure of the LSG, the sensitivity of the pressure sensor is as high as 0.96 kPa(-1) in a wide pressure range (0 ~ 50 kPa). Considering both sensitivity and pressure sensing range, the pressure sensor developed in this work is the best among all reported pressure sensors to date. A model of the LSG pressure sensor is also established, which agrees well with the experimental results. This work indicates that laser scribed flexible graphene pressure sensors could be widely used for artificial e-skin, medical-sensing, bio-sensing and many other areas.

A third-order mode high frequency biosensor with atomic resolution.

An atomic resolution ultra-high sensitivity surface acoustic wave (SAW) biosensor for DNA sequences and cells detection is proposed. Interdigitated transducers (IDTs) fabricated on LiNbO3 substrate achieve a high quality factor (Q) of over 4000 at a frequency of 6.4 GHz (third-order harmonic mode) using an optimized design and process. The biosensor shows excellent linear responses to target DNA in the range from 1 µg/ml to 1 ng/ml with a high sensitivity of 6.7 × 10(-16)g/cm(2)/Hz, hence the difference of a single hybridized DNA base can also be distinguished. With such a high mass resolution, the biosensor is capable of quantitative detection of living cancer cells. The frequency responses of single mouse mammary adenocarcinoma (EMT6) cell and mouse fibroblast (3T3) cell are studied. The interferences in the experiments show insignificant influence on the frequency shift, which verifies the high selectivity of the biosensor. The biosensor is also able to repeat the sensing ability after rough cleaning, therefore cost reduction is achieved from the recycling process in practical applications. The detection limit is defined from the noise analysis of the device, atomic resolution is realized according to the calculation, thereby initiating a potential tool for high-precision medical diagnoses and phenomena observation at the atomic-level.

In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device.

A resistive random access memory (RRAM) device with a tunable switching window is demonstrated for the first time. The SET voltage can be continuously tuned from 0.27 to 4.5 V by electrical gating from -10 to +35 V. The gate-controlled bilayer graphene-electrode RRAM can function as 1D1R and potentially increase the RRAM density.

Graphene earphones: entertainment for both humans and animals.

The human hearing range is from 20 Hz to 20 kHz. However, many animals can hear much higher sound frequencies. Dolphins, especially, have a hearing range up to 300 kHz. To our knowledge, there is no data of a reported wide-band sound frequency earphone to satisfy both humans and animals. Here, we show that graphene earphones, packaged into commercial earphone casings can play sounds ranging from 100 Hz to 50 kHz. By using a one-step laser scribing technology, wafer-scale flexible graphene earphones can be obtained in 25 min. Compared with a normal commercial earphone, the graphene earphone has a wider frequency response (100 Hz to 50 kHz) and a three times lower fluctuation (±10 dB). A nonlinear effect exists in the graphene-generated sound frequency spectrum. This effect could be explained by the DC bias added to the input sine waves which may induce higher harmonics. Our numerical calculations show that the sound frequency emitted by graphene could reach up to 1 MHz. In addition, we have demonstrated that a dog wearing a graphene earphone could also be trained and controlled by 35 kHz sound waves. Our results show that graphene could be widely used to produce earphones for both humans and animals.

Novel field-effect Schottky barrier transistors based on graphene-MoS2 heterojunctions.

Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm(2)/V · s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 10(5)) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm(2)/V · s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics.

SML resist processing for high-aspect-ratio and high-sensitivity electron beam lithography.

A detailed process characterization of SML electron beam resist for high-aspect-ratio nanopatterning at high sensitivity is presented. SML contrast curves were generated for methyl isobutyl ketone (MIBK), MIBK/isopropyl alcohol (IPA) (1:3), IPA/water (7:3), n-amyl acetate, xylene, and xylene/methanol (3:1) developers. Using IPA/water developer, the sensitivity of SML was improved considerably and found to be comparable to benchmark polymethylmethacrylate (PMMA) resist without affecting the aspect ratio performance. Employing 30-keV exposures and ultrasonic IPA/water development, an aspect ratio of 9:1 in 50-nm half-pitch dense grating patterns was achieved representing a greater than two times improvement over PMMA. Through demonstration of 25-nm lift-off features, the pattern transfer performance of SML is also addressed.