Imprinting Spatial Helicity Structure of Vector Vortex Beam on Spin Texture in Semiconductors.

We present the transfer of the spatially variant polarization of topologically structured light to the spatial spin texture in a semiconductor quantum well. The electron spin texture, which is a circular pattern with repeating spin-up and spin-down states whose repetition rate is determined by the topological charge, is directly excited by a vector vortex beam with a spatial helicity structure. The generated spin texture efficiently evolves into a helical spin wave pattern owing to the spin-orbit effective magnetic fields in the persistent spin helix state by controlling the spatial wave number of the excited spin mode. By tuning the repetition length and azimuthal angle, we simultaneously generate helical spin waves with opposite phases by a single beam.

Surface-mediated spin dynamics probed by optical-pump-probe scanning tunneling microscopy.

In current materials science and technologies, surface effects on carrier and spin dynamics in functional materials and devices are of great importance. In this paper, we present the surface-sensitive probing of electron spin dynamics, performed by optical-pump-probe scanning tunneling microscopy (OPP-STM). Time-resolved spin lifetime information on a manganese (Mn)-deposited GaAs(110) surface was successfully obtained for the first time. With increasing Mn density via in situ evaporation, a nonlinear change in the spin lifetime in the picosecond range was clearly observed, while directly confirming the Mn density by STM. In comparison with the results obtained by the conventional OPP method, we have also demonstrated that the observed nonlinear spin lifetime behavior was surface-mediated, which can be characterized using only the surface-sensitive OPP-STM technique.

Evidence for Ferromagnetic Clusters in the Colossal-Magnetoresistance Material EuB_{6}.

We combined scanning tunneling microscopy and locally resolved magnetic stray field measurements on the ferromagnetic semimetal EuB_{6}, which exhibits a complex ferromagnetic order and a colossal magnetoresistance effect. In a zero magnetic field, scanning tunneling spectroscopy visualizes the existence of local inhomogeneities in the electronic density of states, which we interpret as the localization of charge carriers due to the formation of magnetic polarons. Micro-Hall magnetometry measurements of the total stray field emanating from the end of a rectangular-shaped platelike sample reveals evidence for magnetic clusters also in finite magnetic fields. In contrast, the signal detected below the faces of the magnetized sample measures a local stray field indicating the formation of pronounced magnetic inhomogeneities consistent with large clusters of percolated magnetic polarons.

Identification method for dental alloy type using a cosine similarity program: A preliminary investigation.

Although dental evidence is frequently used for the identification of unidentified persons, information about the many types of alloys used in prosthetics is not utilized. If the type of alloy can be identified from a small amount of material, the scope of the search could be narrowed. In this experiment, a method was investigated for identifying the alloy type using 3 kinds of cutting points (a white point and 2 types of silicone points). Wavelength-dispersive X-ray spectroscopy (WDS) was used for elemental analysis. The elements were translated into multidimensional vectors, and the cosine similarity was calculated to compare vectors of the WDS results and vectors of the official data of alloys. According to the results, cosine similarity showed a concordance of more than 0.8. The developed program is expected to be useful as a method for identifying alloy types using only a small amount of grinding dust.

Damage-free top-down processes for fabricating two-dimensional arrays of 7 nm GaAs nanodiscs using bio-templates and neutral beam etching.

The first damage-free top-down fabrication processes for a two-dimensional array of 7 nm GaAs nanodiscs was developed by using ferritin (a protein which includes a 7 nm diameter iron core) bio-templates and neutral beam etching. The photoluminescence of GaAs etched with a neutral beam clearly revealed that the processes could accomplish defect-free etching for GaAs. In the bio-template process, to remove the ferritin protein shell without thermal damage to the GaAs, we firstly developed an oxygen-radical treatment method with a low temperature of 280 °C. Then, the neutral beam etched the defect-free nanodisc structure of the GaAs using the iron core as an etching mask. As a result, a two-dimensional array of GaAs quantum dots with a diameter of ∼ 7 nm, a height of ∼ 10 nm, a high taper angle of 88° and a quantum dot density of more than 7 × 10(11) cm(-2) was successfully fabricated without causing any damage to the GaAs.

Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature.

We have systematically investigated the structural properties, carrier lifetimes, namely, photoluminescence (PL) lifetimes (τPL), and electron spin relaxation times (τs) in (110) GaAs/AlGaAs multiple quantum wells (MQWs) by using time-resolved PL measurements. The MQWs were grown by molecular beam epitaxy within a wide range of the growth temperature Tg (430-600 °C) and a high V/III flux ratio using As2. At 530 °C < Tg < 580 °C, we found that the quality of the heterointerfaces is significantly improved, resulting in τPL~40 ns at RT, one order of magnitude longer than those reported so far. Long τs (~6 ns) is also observed at RT.

A novel identification method using perceptual degree of concordance of occlusal surfaces calculated by a Python program.

One of the important issues during the response to a mass disaster is the identification of victims. In this study, we verified the use of the occlusal morphology of molars for individual identification. The aim of this study was to establish a simple new method for identifying individuals from molar data. Using Python, we developed programming that included the perceptual Hash (pHash) function and the Hamming distance (HD) between antemortem data (AMD) and postmortem data (PMD). The AMD comprised 2,215 dental models. The PMD were selected from the AMD set and comprised 17 models from the same individual with changes over time. As a result, 16 PMD models (over 90%) were ranked in the top 5%. Although identification using only a single molar is difficult, there is the possibility of narrowing down victims' identity with high accuracy through verification using multiple teeth. This system is expected to be useful as a very simple method of identification.

Influence of novel resin monomer on viability of L-929 mouse fibroblasts in vitro.

We have previously synthesized a novel acrylic resin monomer, methacryloyloxyethyl methyl succinate (TA). The aim of this in vitro study, therefore, was to examine its influence on cell viability using L-929 mouse fibroblasts and then compare the results with MMA, EMA, and LMA. Medium containing each monomer was changed every 15 minutes as some monomers were volatile. After one hour of exposure, these mediums were replaced with a normal medium and cells were further incubated for 72 hours. IC50 value for each monomer was determined, and chronological cell viability and cytomorphologic observation were evaluated. Viability was impaired in a dose-dependent manner. All monomers, except TA, tended to correlate between molecular weight and cell viability. On the other hand, TA showed excellent viability and did not impair growth abruptly. These results thus demonstrated that cellular damage by TA was much lower than that by other monomers.

Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field.

Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton-exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72 ± 0.05.

Decomposition of 1/f noise in Al(x)Ga(1-x)As/GaAs Hall devices.

We present a systematic study of the low-frequency noise in micron and submicron Hall devices made from Al(x)Ga(1-x)As/GaAs heterostructures. In a sample with feature size as small as 0.45 microm we observe a nonmonotonic temperature dependence of the noise power spectral densities (PSD's) at temperatures where surface states and deep-level excitations are frozen out. Near the temperature where the noise peaks, the PSD's can be described by a thermally activated two-level random telegraph signal, i.e., the 1/f noise originating from switching events in the highly doped Al(x)Ga(1-x) layer is resolved into a single Lorentzian spectrum.

Modulation of noise in submicron GaAs/AlGaAs hall devices by gating.

We present a systematic characterization of fluctuations in submicron Hall devices based on GaAs/AlGaAs two-dimensional electron gas heterostructures at temperatures between 1.5 to 60 K. A large variety of noise spectra, from 1/f to Lorentzian, are obtained by gating the Hall devices. The noise level can be reduced by up to several orders of magnitude with a moderate gate voltage of 0.2 V, whereas the carrier density increases less than 60% in the same range. The significant dependence of the Hall noise spectra on temperature and gate voltage is explained in terms of the switching processes related to impurities in n-AlGaAs.