RESUMEN
Defects such as oxygen vacancy in the nanostructures have paramount importance in tuning the optical and electronic properties of a metal oxide. Here we report the growth of oxygen deficit tungsten oxide (W18O49) nanorods modified with ruthenium oxide (RuO2) using a simple and economical hydrothermal approach for energy storage application. In this work, a novel approach of hybridizing the W18O49 nanostructure with RuO2 to control the electrochemical performance for energy storage applications has been proposed. The result displays that the hybridization of the nanostructures plays an important role in yielding high specific capacitance of the electrode material. Due to the augmentation of W18O49 and RuO2 nanostructures, the galvanostatic charging and discharging (GCD) mechanism exhibited the transformation from the battery type characteristics of W18O49 into the typical pseudocapacitor feature of hybrid architect nanostructure due to defect creations. The electrochemical measurement of hybrid nanomaterial shows the doubling of specific capacitance to 1126 F/g and 1050 F/g in cyclic voltammetry (CV) and GCD, respectively, in comparison with W18O49 and RuO2 and earlier reports. The enhancement in the stability performance up to 3000 cycles of hybrid is indebted to the stable nature of W18O49 and the high conductivity of RuO2.
RESUMEN
The current research focuses on the Intracellular biosynthesis of Ag/AgCl nanohybrids in microalgae, Scenedesmus sp. The effect of biosynthesis process on growth and lipid profile of cells is key element of this study. Ag/AgCl nanohybrids synthesized intracellularly were characterized by UV-Vis spectrophotometer, Powder X-Ray Diffraction (P-XRD), Scanning Electron Microscopy (SEM), High Resolution Transmission Electron Microscopy (HRTEM). 10-20 nm and 10-50 nm sized spherical shaped nanoparticles of polycrystalline nature were grown using 0.5 and 1 mM of AgNO3 precursor, respectively and Scenedesmus sp. as reducing agent. Total lipid content of the cells treated with 0.5 mM and 1 mM AgNO3 was static and found to be 43.2 ± 0.01 µg/mL and 48.2 ± 0.02 µg/mL respectively at 120 h of Ag/AgCl nanoparticles biosynthesis. FAME (Fatty Acid Methyl Ester) profile was improved due to intracellular nanoparticles biosynthesis with maximum C16:0 (palmitic acid) (35.7%) in cells treated with 0.5 mM AgNO3 used for Ag/AgCl nanohybrids synthesis. Palmitic acid in cells exposed to 0.5 mM concentration of metallic precursor increased by 75.86%. Synthesized nanoparticles were tested on four bacterial strains to establish its antibacterial efficiency showing appropriate zone of inhibition at varying concentrations. Present study efficiently demonstrates the utility of microalgae integrating nanoparticles biosynthesis and lipid accumulation.
Asunto(s)
Nanopartículas del Metal , Scenedesmus , Antibacterianos/farmacología , Lípidos , PlataRESUMEN
We have used transient electron-beam-induced current (EBIC) to map minority carrier lifetime distributions in multicrystalline Silicon (mc-Si). In this technique, the electron beam from a scanning transmission electron microscope was on-off modulated while the sample was scanned. The resulting transient EBIC was analyzed to form a lifetime map. An analytical function was introduced as part of the analysis in determining this map. We have verified this approach using numerical simulations and have reproduced a lifetime map for an mc-Si wafer.
Asunto(s)
Electrones , Compuestos de Silicona/química , Microscopía Electrónica de Rastreo/métodos , Modelos Teóricos , MigrantesRESUMEN
For SiO2 layers underneath the SiN x antireflection/passivation layers of front-emitter p-type c-Si solar cells, this paper presents an investigation into their effects on polarization-type potential-induced degradation (PID), in addition to a comparison of polarization-type PID behavior in front-emitter p-type c-Si cells and front-emitter n-type c-Si cells. After PID tests with a bias of +1000 V, p-type c-Si cells without SiO2 layers underneath the SiN x layers showed no degradation, although p-type c-Si cells with approx. 10 nm thick SiO2 layers showed polarization-type PID, which is characterized by a reduction of the short-circuit current density and the open-circuit voltage. This result implies that highly insulating layers such as SiO2 layers play an important role in the occurrence of polarization-type PID. Comparison of polarization-type PID in p-type and n-type c-Si cells with SiO2 layers indicated that degradation in the n-type cells is greater and saturates in a shorter time than in the p-type cells. This result is consistent with an earlier proposed model based on the assumption that polarization-type PID is caused by charge accumulation at K centers in SiN x layers. The findings described herein are crucially important for elucidating polarization-type PID and verifying the degradation model.
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In this work, we have successfully proclaimed the importance of defect prone nanostructure on to the electrode surface for the promising glucose sensing applications. Oxygen-deficient W18O49 moieties with multiple valences W6+ and W5+ have been investigated as an efficient electrocatalyst for the nonenzymatic glucose sensing. In order to highlight the importance of the defect, WO3 nanomaterial's electrode has also been synthesized and tested for glucose sensing. W18O49 delivers a larger Brunauer-Emmett-Teller (BET) surface area and mesoporous pores which have contributed to the high sensitivity performances. The oxygen vacant W18O49 nanostructure has been synthesized by a facile solvothermal route and has retained interconnected nanorods morphology. Compared with non-oxygen-deficient WO3, this defect prone version of tungsten oxide (W18O49) possesses a doubled linearity range up to 1.6 mM maximum electrooxidation toward glucose by giving a 1.6 times higher sensitivity of 167 µA mM-1 cm-2, 0.5 times lower detection limit of 0.02 µM (S/N = 3), and a swift response time of 5 s.
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Nanoestructuras , Nanotubos , Electrodos , GlucosaRESUMEN
Although crystalline silicon is widely used as substrate material for solar cell, many defects occur during crystal growth. In this study, the generation of crystalline defects in silicon substrates was evaluated. The distributions of small-angle grain boundaries were observed in substrates sliced parallel to the growth direction. Many precipitates consisting of light elemental impurities and small-angle grain boundaries were confirmed to propagate. The precipitates mainly consisted of Si, C, and N atoms. The small-angle grain boundaries were distributed after the precipitation density increased. Then, precipitates appeared at the small-angle grain boundaries. We consider that the origin of the small-angle grain boundaries was lattice mismatch and/or strain caused by the high-density precipitation.