Improved Vth Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O2 Plasma Treatment.

The Vth stability and gate reliability of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with alternating O2 plasma treatment were systematically investigated in this article. It was found that the conduction band offset at the Al2O3/AlGaN interface was elevated to 2.4 eV, which contributed to the suppressed gate leakage current. The time-dependent dielectric breakdown (TDDB) test results showed that the ALD-Al2O3 with the alternating O2 plasma treatment had better quality and reliability. The AlGaN/GaN MIS-HEMT with the alternating O2 plasma treatment demonstrated remarkable advantages in higher Vth stability under high-temperature and long-term gate bias stress.

Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication.

A systematic study of epi-AlGaN/GaN on a SiC substrate was conducted through a comprehensive analysis of material properties and device performance. In this novel epitaxial design, an AlGaN/GaN channel layer was grown directly on the AlN nucleation layer, without the conventional doped thick buffer layer. Compared to the conventional epi-structures on the SiC and Si substrates, the non-buffer epi-AlGaN/GaN structure had a better crystalline quality and surface morphology, with reliable control of growth stress. Hall measurements showed that the novel structure exhibited comparable transport properties to the conventional epi-structure on the SiC substrate, regardless of the buffer layer. Furthermore, almost unchanged carrier distribution from room temperature to 150 °C indicated excellent two-dimensional electron gas (2DEG) confinement due to the pulling effect of the conduction band from the nucleation layer as a back-barrier. High-performance depletion-mode MIS-HEMTs were demonstrated with on-resistance of 5.84 Ω·mm and an output current of 1002 mA/mm. The dynamic characteristics showed a much smaller decrease in the saturation current (only ~7%), with a quiescent drain bias of 40 V, which was strong evidence of less electron trapping owing to the high-quality non-buffer AlGaN/GaN epitaxial growth.

A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication.

A novel atomic-level post-etch-surface-reinforcement (PESR) process is developed to recover the p-GaN etching induced damage region for high performance p-GaN gate HEMTs fabrication. This process is composed of a self-limited surface modification step with O2 plasma, following by an oxide removal step with BCl3 plasma. With PESR process, the AlGaN surface morphology after p-GaN etching was comparable to the as-epitaxial level by AFM characterization, and the AlGaN lattice crystallization was also recovered which was measured in a confocal Raman system. The electrical measurement further confirmed the significant improvement of AlGaN surface quality, with one-order of magnitude lower surface leakage in a metal-semiconductor (MS) Schottky-diode and 6 times lower interface density of states (Dit) in a MIS C-V characterization. The XPS analysis of Al2O3/AlGaN showed that the p-GaN etching induced F-byproduct and Ga-oxide was well removed and suppressed by PESR process. Finally, the developed PESR process was successfully integrated in p-GaN gate HEMTs fabrication, and the device performance was significantly enhanced with ~20% lower of on-resistance and ~25% less of current collapse at Vds,Q bias of 40 V, showing great potential of leverage p-GaN gate HEMTs reliability.

In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication.

In this work, we demonstrated a low current collapse normally on Al2O3/AlGaN/GaN MIS-HEMT with in situ H-radical surface treatment on AlGaN. The in situ atomic pretreatment was performed in a specially designed chamber prior to the thermal ALD-Al2O3 deposition, which improved the Al2O3/AlGaN interface with Dit of ~2 × 1012 cm-2 eV-1, and thus effectively reduced the current collapse and the dynamic Ron degradation. The devices showed good electrical performance with low Vth hysteresis and peak trans-conductance of 107 mS/mm. Additionally, when the devices operated under 25 °C pulse-mode stress measurement with VDS,Q = 40 V (period of 1 ms, pulse width of 1 µs), the dynamic Ron increase of ~14.1% was achieved.

A Low-Code Framework for Complex Crowdsourcing Work Based on Process Modeling.

Crowdsourcing has become a new distributed paradigm, which uses online crowds to solve complex problems. Recently, in order to reduce the development workload and research threshold of crowdsourcing applications, crowdsourcing process modeling is attracting more and more attention. However, complex crowdsourcing processes used for creative and open-ended work have remained out of reach for process modeling, because this type of process usually has a dynamic execution, in which the type, number, and order of tasks and subtasks are often unknown in advance but are determined dynamically at runtime. In this paper, we propose a modeling approach and supporting framework to fill this gap. Specifically, we provide a task model composition to allow task creation on demand, while collaborating on tasks in a tree structure to adapt to the dynamic execution. Moreover, we introduce a set of message communication modes to support data exchange among tasks. Finally, we construct a framework named CrowdModeller to embody this approach. Through two evaluations, we demonstrate its effectiveness.

High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application.

A systematic study of the selective etching of p-GaN over AlGaN was carried out using a BCl3/SF6 inductively coupled plasma (ICP) process. Compared to similar chemistry, a record high etch selectivity of 41:1 with a p-GaN etch rate of 3.4 nm/min was realized by optimizing the SF6 concentration, chamber pressure, ICP and bias power. The surface morphology after p-GaN etching was characterized by AFM for both selective and nonselective processes, showing the exposed AlGaN surface RMS values of 0.43 nm and 0.99 nm, respectively. MIS-capacitor devices fabricated on the AlGaN surface with ALD-Al2O3 as the gate dielectric after p-GaN etch showed the significant benefit of BCl3/SF6 selective etch process.

QRS Detection Based on Improved Adaptive Threshold.

Cardiovascular disease is the first cause of death around the world. In accomplishing quick and accurate diagnosis, automatic electrocardiogram (ECG) analysis algorithm plays an important role, whose first step is QRS detection. The threshold algorithm of QRS complex detection is known for its high-speed computation and minimized memory storage. In this mobile era, threshold algorithm can be easily transported into portable, wearable, and wireless ECG systems. However, the detection rate of the threshold algorithm still calls for improvement. An improved adaptive threshold algorithm for QRS detection is reported in this paper. The main steps of this algorithm are preprocessing, peak finding, and adaptive threshold QRS detecting. The detection rate is 99.41%, the sensitivity (Se) is 99.72%, and the specificity (Sp) is 99.69% on the MIT-BIH Arrhythmia database. A comparison is also made with two other algorithms, to prove our superiority. The suspicious abnormal area is shown at the end of the algorithm and RR-Lorenz plot drawn for doctors and cardiologists to use as aid for diagnosis.