Vertically tapered waveguide spot size converters fabricated via a linewidth controlled grey tone lithography for InP-based photonic integrated circuits.

We report a novel and simple fabrication process to realize vertically tapered spot size converters (SSC) on InP photonic integrated circuits. The vertical tapering was achieved via a linewidth controlled local optical dose variation, leading to a grey tone photoresist profile. The fabricated SSCs are compact, polarization insensitive and demonstrate a very high mode conversion efficiency of 95%. Integrated SSCs improved the overall loss by 5 dB giving a coupling loss as low as 1.3 dB/facet, for a lensed fibre with a mode field diameter of 3.0 µm. A good agreement was found between the fibre-to-fibre optical loss measurements and those predicted from simulations.

Two-photon photodetector in a multiquantum well GaAs laser structure at 1.55 microm.

We report two-photon photocurrent in a GaAs/AlGaAs multiple quantum well laser at 1.55 microm. Using 1ps pulses, a purely quadratic photocurrent is observed. We measure the device efficiency, sensitivity, as well as the two-photon absorption coefficient. The results show that the device has potential for signal processing, autocorrelation and possibly two-photon source applications at sub-Watt power levels.

Quantum dots for terahertz generation.

Nanostructures made of semiconductors, such as quantum wells and quantum dots (QD), are well known, and some have been incorporated in practical devices. Here we focus on novel structures made of QDs and related devices for terahertz (THz) generation. Their potential advantages, such as low threshold current density, high characteristic temperature, increased differential gain, etc, make QDs promising candidates for light emitting applications in the THz region. Our idea of using resonant tunneling through QDs is presented, and initial results on devices consisting of self-assembled InAs QDs in an undoped GaAs matrix, with a design incorporating a GaInNAs/GaAs short period superlattice, are discussed. Moreover, shallow impurities are also being explored for possible THz emission: the idea is based on the tunneling through bound states of individual donor or acceptor impurities in the quantum well. Initial results on devices having an AlGaAs/GaAs double-barrier resonant tunneling structure are discussed.

Two-photon absorption-induced self-phase modulation in GaAs-AlGaAs waveguides for surface-emitted second-harmonic generation.

Performance-limiting asymmetric distortion is observed in the spectra of fundamental pulses transmitted through GaAs-Al(0.9)Ga(0.1)As multilayer waveguides designed for surface-emitted second-harmonic generation. This behavior is attributed to refractive-index changes resulting from the accumulation of free carriers created by two-photon absorption in the GaAs layers. Numerical simulations of the intensity-dependent spectra by use of the separately measured two-photon absorption coefficient are shown to be in good agreement with the observed spectra.

Coupled electron-phonon modes in optically pumped resonant intersubband lasers.

Intersubband lasing at 12-16 microm based on a CO2 laser pumped stimulated resonant Raman process in GaAs/AlGaAs three-level double-quantum-well structures is reported. The presence, or lack of, lasing action provides evidence for resonantly coupled modes of collective electronic intersubband transitions and longitudinal optical phonons. An anticrossing behavior of these modes is clearly seen when the difference between the pump and lasing energies (i.e., Stokes Raman shift) is compared with the subband separation. This work reveals the significance of the strong coupling between intersubband transitions and phonons and raises a new possibility of realizing a phonon "laser."