Tuning bulk and surface conduction in the proposed topological Kondo insulator SmB(6).

Bulk and surface state contributions to the electrical resistance of single-crystal samples of the topological Kondo-insulator compound SmB_{6} are investigated as a function of crystal thickness and surface charge density, the latter tuned by ionic liquid gating with electrodes patterned in a Corbino disk geometry on a single (100) surface. By separately tuning bulk and surface conduction channels, we show conclusive evidence for a model with an insulating bulk and metallic surface states, with a crossover temperature that depends solely on the relative contributions of each conduction channel. The surface conductance, on the order of 100 e^{2}/h, exhibits a field-effect mobility of 133 cm^{2}/Vs and a large carrier density of ∼2×10^{14} cm^{-2}, in good agreement with recent photoemission results. With the ability to gate modulate surface conduction by more than 25%, this approach provides promise for both fundamental and applied studies of gate-tuned devices structured on bulk crystal samples.

Ambipolar surface state thermoelectric power of topological insulator Bi2Se3.

We measure gate-tuned thermoelectric power of mechanically exfoliated Bi2Se3 thin films in the topological insulator regime. The sign of the thermoelectric power changes across the charge neutrality point as the majority carrier type switches from electron to hole, consistent with the ambipolar electric field effect observed in conductivity and Hall effect measurements. Near the charge neutrality point and at low temperatures, the gate-dependent thermoelectric power follows the semiclassical Mott relation using the expected surface state density of states but is larger than expected at high electron doping, possibly reflecting a large density of states in the bulk gap. The thermoelectric power factor shows significant enhancement near the electron-hole puddle carrier density ∼0.5 × 10(12) cm(-2) per surface at all temperatures. Together with the expected reduction of lattice thermal conductivity in low-dimensional structures, the results demonstrate that nanostructuring and Fermi level tuning of three-dimensional topological insulators can be promising routes to realize efficient thermoelectric devices.

Topological insulator quantum dot with tunable barriers.

Thin (6-7 quintuple layer) topological insulator Bi(2)Se(3) quantum dot devices are demonstrated using ultrathin (2-4 quintuple layer) Bi(2)Se(3) regions to realize semiconducting barriers which may be tuned from ohmic to tunneling conduction via gate voltage. Transport spectroscopy shows Coulomb blockade with large charging energy >5 meV and additional features implying excited states.

Intrinsic electron-phonon resistivity of Bi2Se3 in the topological regime.

We measure the temperature-dependent carrier density and resistivity of the topological surface state of thin exfoliated Bi(2)Se(3) in the absence of bulk conduction. When the gate-tuned chemical potential is near or below the Dirac point, the carrier density is strongly temperature-dependent, reflecting thermal activation from the nearby bulk valence band, while, above the Dirac point, unipolar n-type surface conduction is observed with negligible thermal activation of bulk carriers. In this regime, linear resistivity vs temperature reflects intrinsic electron-acoustic phonon scattering. A quantitative comparison with a theoretical transport calculation including both phonon and disorder effects gives the ratio of deformation potential to Fermi velocity D/hν(F)=4.7 Å(-1). This strong phonon scattering in the Bi(2)Se(3) surface state gives intrinsic limits for the conductivity and charge carrier mobility at room temperature of ~550 µS per surface and ~10,000 cm(2)/V s.

Beyond triplet: Unconventional superconductivity in a spin-3/2 topological semimetal.

In all known fermionic superfluids, Cooper pairs are composed of spin-1/2 quasi-particles that pair to form either spin-singlet or spin-triplet bound states. The "spin" of a Bloch electron, however, is fixed by the symmetries of the crystal and the atomic orbitals from which it is derived and, in some cases, can behave as if it were a spin-3/2 particle. The superconducting state of such a system allows pairing beyond spin-triplet, with higher spin quasi-particles combining to form quintet or septet pairs. We report evidence of unconventional superconductivity emerging from a spin-3/2 quasi-particle electronic structure in the half-Heusler semimetal YPtBi, a low-carrier density noncentrosymmetric cubic material with a high symmetry that preserves the p-like j = 3/2 manifold in the Bi-based Γ8 band in the presence of strong spin-orbit coupling. With a striking linear temperature dependence of the London penetration depth, the existence of line nodes in the superconducting order parameter Δ is directly explained by a mixed-parity Cooper pairing model with high total angular momentum, consistent with a high-spin fermionic superfluid state. We propose a k ⋅ p model of the j = 3/2 fermions to explain how a dominant J = 3 septet pairing state is the simplest solution that naturally produces nodes in the mixed even-odd parity gap. Together with the underlying topologically nontrivial band structure, the unconventional pairing in this system represents a truly novel form of superfluidity that has strong potential for leading the development of a new series of topological superconductors.

Topological RPdBi half-Heusler semimetals: A new family of noncentrosymmetric magnetic superconductors.

We report superconductivity and magnetism in a new family of topological semimetals, the ternary half-Heusler compound RPdBi (R: rare earth). In this series, tuning of the rare earth f-electron component allows for simultaneous control of both lattice density via lanthanide contraction and the strength of magnetic interaction via de Gennes scaling, allowing for a unique tuning of the normal-state band inversion strength, superconducting pairing, and magnetically ordered ground states. Antiferromagnetism with ordering vector (½,½,½) occurs below a Néel temperature that scales with de Gennes factor dG, whereas a superconducting transition is simultaneously supressed with increasing dG. With superconductivity appearing in a system with noncentrosymmetric crystallographic symmetry, the possibility of spin-triplet Cooper pairing with nontrivial topology analogous to that predicted for the normal-state electronic structure provides a unique and rich opportunity to realize both predicted and new exotic excitations in topological materials.

Air-stable electron depletion of Bi(2)Se(3) using molybdenum trioxide into the topological regime.

We perform high-resolution photoelectron spectroscopy on in situ cleaved topological insulator Bi2Se3 single crystals and in situ transport measurements on Bi2Se3 films grown by molecular beam epitaxy. We demonstrate efficient electron depletion of Bi2Se3 via vacuum deposition of molecular MoO3, lowering the surface Fermi energy to within ∼100 meV of the Dirac point, well into the topological regime. A 100 nm MoO3 film provides an air-stable doping and passivation layer.

Coherent topological transport on the surface of Bi2Se3.

The two-dimensional surface of the three-dimensional topological insulator is in the symplectic universality class and should exhibit perfect weak antilocalization reflected in positive weak-field magneto-resistance. Previous studies in topological insulator thin films suffer from high level of bulk n-type doping making quantitative analysis of weak antilocalization difficult. Here we measure the magneto-resistance of bulk-insulating Bi2Se3 thin films as a function of film thickness and gate-tuned carrier density. For thick samples, the magnitude of weak antilocalization indicates two decoupled (top and bottom) symplectic surfaces. On reducing thickness, we observe first a crossover to a single symplectic channel, indicating coherent coupling of top and bottom surfaces via interlayer tunnelling, and second, a complete suppression of weak antilocalization. The first crossover is governed by the ratio of phase coherence time to the inter-surface tunnelling time, and the second crossover occurs when the hybridization gap becomes comparable to the disorder strength.