Fabrications of the Flexible Non-Enzymatic Glucose Sensors Using Au-CuO-rGO and Au-CuO-rGO-MWCNTs Nanocomposites as Carriers.

A flexible, non-enzymatic glucose sensor was developed and tested on a polyethylene terephthalate (PET) substrate. The sensor's design involved printing Ag (silver) as the electrode and utilizing mixtures of either gold-copper oxide-modified reduced graphene oxide (Au-CuO-rGO) or gold-copper oxide-modified reduced graphene oxide-multi-walled carbon nanotubes (Au-CuO-rGO-MWCNTs) as the carrier materials. A one-pot synthesis method was employed to create a nanocomposite material, consisting of Au-CuO-rGO mixtures, which was then printed onto pre-prepared flexible electrodes. The impact of different weight ratios of MWCNTs (0~75 wt%) as a substitute for rGO was also investigated on the sensing characteristics of Au-CuO-rGO-MWCNTs glucose sensors. The fabricated electrodes underwent various material analyses, and their sensing properties for glucose in a glucose solution were measured using linear sweep voltammetry (LSV). The LSV measurement results showed that increasing the proportion of MWCNTs improved the sensor's sensitivity for detecting low concentrations of glucose. However, it also led to a significant decrease in the upper detection limit for high-glucose concentrations. Remarkably, the research findings revealed that the electrode containing 60 wt% MWCNTs demonstrated excellent sensitivity and stability in detecting low concentrations of glucose. At the lowest concentration of 0.1 µM glucose, the nanocomposites with 75 wt% MWCNTs showed the highest oxidation peak current, approximately 5.9 µA. On the other hand, the electrode without addition of MWCNTs displayed the highest detection limit (approximately 1 mM) and an oxidation peak current of about 8.1 µA at 1 mM of glucose concentration.

Synthesis of ZnO Nanoflower Arrays on a Protrusion Sapphire Substrate and Application of Al-Decorated ZnO Nanoflower Matrix in Gas Sensors.

In this study, we utilized a sapphire substrate with a matrix protrusion structure as a template. We employed a ZnO gel as a precursor and deposited it onto the substrate using the spin coating method. After undergoing six cycles of deposition and baking, a ZnO seed layer with a thickness of 170 nm was formed. Subsequently, we used a hydrothermal method to grow ZnO nanorods (NRs) on the aforementioned ZnO seed layer for different durations. ZnO NRs exhibited a uniform outward growth rate in various directions, resulting in a hexagonal and floral morphology when observed from above. This morphology was particularly evident in ZnO NRs synthesized for 30 and 45 min. Due to the protrusion structure of ZnO seed layer, the resulting ZnO nanorods (NRs) displayed a floral and matrix morphology on the protrusion ZnO seed layer. To further enhance their properties, we utilized Al nanomaterial to decorate the ZnO nanoflower matrix (NFM) using a deposition method. Subsequently, we fabricated devices using both undecorated and Al-decorated ZnO NFMs and deposited an upper electrode using an interdigital mask. We then compared the gas-sensing performance of these two types of sensors towards CO and H2 gases. The research findings indicate that sensors based on Al-decorated ZnO NFM exhibit superior gas-sensing properties compared to undecorated ZnO NFM for both CO and H2 gases. These Al-decorated sensors demonstrate faster response times and higher response rates during the sensing processes.

Synthesis of ZnO Nanoflower Arrays on Patterned Cavity Substrate and Their Application in Methylene Blue Degradation.

A novel method was proposed to fabricate a ZnO seed layer with a protrusion and matrix structure, and then ZnO nanorods could be synthesized on it using the hydrothermal method to form ZnO nanoflower arrays (NFAs) easily. A patterned sapphire with a matrix cavity was used as the template, ZnO gel was deposited on the multilayer substrates using spinning coating, and the prepared seed layer with a protrusion and an array-patterned structure was moved to a Si substrate using the lift-off method. Because the ZnO seed layer exhibited a matrix and protrusion structure, ZnO nanorods were grown vertically downwards and formed ZnO NFAs. The XRD patterns resulting from analyses showed that the diffraction peaks of the five growth directions of ZnO NFAs increased as growth time increased. Furthermore, SEM and FIB analyses indicated that the length, width, aspect ratio, and total surface area of ZnO NFAs grown on the transferred seed layer increased as the synthesis time increased. Different ZnO NFAs synthesized for varying synthesis times were used to investigate methylene blue degradation, with the effect of ZnO NFAs on methylene blue degradation determined using the Beer-Lambert law. Our results demonstrate that the effect of ZnO NFAs on methylene blue degradation was enhanced with increasing synthesis time.

Investigations of a Statistical and Analytical Method to Find the Relationship between the Morphological and Optical Properties of ZnO Nanoflower Arrays.

In this study, a sapphire substrate with a patterned concave structure was used to prepare ZnO film/A-B glue, and the ZnO film/A-B glue with a patterned convex matrix was transferred onto a silicon wafer using the lift-off technology as the seed layer. Then, the hydrothermal method with different Zn(CH3COO)2 and C6H12N4 concentrations as precursors was used to synthesize ZnO nanoflower arrays on the patterned convex ZnO seed layer. XRD pattern, FESEM, FIB, and photoluminescence (PL) spectrometry were employed to observe and analyze the properties of the synthesized ZnO nanoflower arrays. When Zn(CH3COO)2 and C6H12N4 concentrations were 0.01, 0.02, 0.03, and 0.04 M, the average heights of the ZnO nanorods in the ZnO nanoflower arrays were 993, 1500, 1550, and 1650 nm, the average diameters of the ZnO nanorods were 50, 90, 105, and 225 nm, and the aspect ratios (H/D) of the ZnO nanorods were 19.9, 16.7, 14.8, and 7.33, respectively. A simple statistical and analytical method was investigated to estimate the densities (number of nanorods) of the ZnO nanoflower arrays in one 1 µm × 1 µm area. The total surface area (S) of the ZnO nanoflower arrays first increased from 5.05 × 106 and then reached a maximum value of 1.20 × 107 nm2 as Zn(CH3COO)2 and C6H12N4 concentrations increased from 0.01 to 0.02 M. For the systhesized ZnO nanoflower arrays, as the Zn(CH3COO)2 and C6H12N4 concentrations increased from 0.01 to 0.04 M, their total volume (V) increased from the 6.23 × 107 to 5.90 × 108 nm3 and the S/V ratio decreased from 8.10 × 10-2 to 1.84 × 10-2. We found that ZnO nanoflower arrays with Zn(CH3COO)2 and C6H12N4 concentrations of 0.2 M presented the maximum PL emission intensities. The calculated S/V ratios and X-ray photoelectron spectroscopy analyses are used to discuss the reasons for these results.

A Novel Synthesis of ZnO Nanoflower Arrays Using a Lift-Off Technique with Different Thicknesses of Al Sacrificial Layers on a Patterned Sapphire Substrate.

A novel method to synthesize large-scale ZnO nanoflower arrays using a protrusion patterned ZnO seed layer was investigated. Different thicknesses of aluminum (Al) film were deposited on the concave patterned sapphire substrate as a sacrificial layer. ZnO gel was layered onto the Al film as a seed layer and OE-6370HF AB optical glue was used as the adhesive material. A lift-off technique was used to transfer the protrusion patterned ZnO/AB glue seed layer to a P-type Si <100> wafer. The hydrothermal method using Zn(CH3COO)2 and C6H12N4 solutions as liquid precursors was used to synthesize ZnO nanoflower arrays on the patterned seed layer. X-ray diffraction spectra, field-effect scanning electron microscopy, focused ion beam milling (for obtaining cross-sectional views), and photoluminescence (PL) spectrometry were used to analyze the effects that different synthesis times and different thicknesses of Al sacrificial layer had on the properties of ZnO nanoflower arrays. These effects included an increased diameter, and a decreased height, density (i.e., number of nanorods in µm-2), total surface area, total volume, and maximum emission intensity of PL spectrum. We showed that when the synthesis time and the thickness of the Al sacrificial layer were increased, the emission intensities of the ultraviolet light and visible light had different variations.

Fabrication of carbon nanotubes field emission cathode by composite plating.

Carbon nanotubes (CNTs) have high aspect ratio and have great potential to be applied as the field emission cathode because of its large field enhancement factor. In this work, a high performance carbon nanotube field emission cathode (CNTFC) was fabricated by using a composite plating method. The CNTs were purified by acid solutions and then dispersed in electrobath with nickel ions at temperatures of 60, 70, or 80 degrees C for the electroless plating process on glass substrate. The resulting CNT-Ni composite film has strong adhesion on the glass substrate. The degree of graphitization and the microstructure of the CNTFCs were studied by Raman spectroscopy and scanning electron microscopy. The field emission properties of the CNTFCs show a low turn-on electric field E(on) of about 1.2 V/microm, and a low threshold electric field E(th) of about 1.9 V/microm. Such a composite plating method could be applied to the fabrication of large area CNT field-emission displays.

Using Oxygen Plasma Pretreatment to Enhance the Properties of F-Doped ZnO Films Prepared on Polyimide Substrates.

In this study, a radio frequency magnetron sputtering process was used to deposit F-doped ZnO (FZO) films on polyimide (PI) substrates. The thermal expansion effect of PI substrates induces distortion and bending, causing FZO films to peel and their electrical properties and crystallinity to deteriorate. To address these shortcomings, oxygen (O2) plasma was used to pretreat the surface of PI substrates using a plasma-enhanced chemical vapor deposition system before the FZO films were deposited. The effects of O2 plasma pretreatment time on the surface water contact angle, surface morphologies, and optical properties of the PI substrates were investigated. As the pretreatment time increased, so did the roughness of the PI substrates. After the FZO films had been deposited on the PI substrates, variations in the surface morphologies, crystalline structure, composition, electrical properties, and optical properties were investigated as a function of the O2 plasma pretreatment time. When this was 30 s, the FZO films had optimal optical and electrical properties. The resistivity was 3.153 × 10-3 Ω-cm, and the transmittance ratios of all films were greater than 90%. The X-ray photoelectron spectroscopy spectra of the FZO films, particularly the peaks for O1s, Zn 2p1/2, and Zn 2p3/2, were determined for films with O2 plasma pretreatment times of 0 and 30 s. Finally, a HCl solution was used to etch the surfaces of the deposited FZO films, and silicon-based thin-film solar cells were fabricated on the FZO/PI substrates. The effect of O2-plasma pretreatment time on the properties of the fabricated solar cells is thoroughly discussed.

Investigation of the Structural, Electrical, and Optical Properties of the Nano-Scale GZO Thin Films on Glass and Flexible Polyimide Substrates.

In this study, Ga2O3-doped ZnO (GZO) thin films were deposited on glass and flexible polyimide (PI) substrates at room temperature (300 K), 373 K, and 473 K by the radio frequency (RF) magnetron sputtering method. After finding the deposition rate, all the GZO thin films with a nano-scale thickness of about 150 ± 10 nm were controlled by the deposition time. X-ray diffraction patterns indicated that the GZO thin films were not amorphous and all exhibited the (002) peak, and field emission scanning electron microscopy showed that only nano-scale particles were observed. The dependences of the structural, electrical, and optical properties of the GZO thin films on different deposition temperatures and substrates were investigated. X-ray photoemission spectroscopy (XPS) was used to measure the elemental composition at the chemical and electronic states of the GZO thin films deposited on different substrates, which could be used to clarify the mechanism of difference in electrical properties of the GZO thin films. In this study, the XPS binding energy spectra of Ga2p3/2 and Ga2p1/2 peaks, Zn2p3/2 and Zn2p1/2 peaks, the Ga3d peak, and O1s peaks for GZO thin films on glass and PI substrates were well compared.

Deposition of F-doped ZnO transparent thin films using ZnF2-doped ZnO target under different sputtering substrate temperatures.

Highly transparent and conducting fluorine-doped ZnO (FZO) thin films were deposited onto glass substrates by radio-frequency (RF) magnetron sputtering, using 1.5 wt% zinc fluoride (ZnF2)-doped ZnO as sputtering target. Structural, electrical, and optical properties of the FZO thin films were investigated as a function of substrate temperature ranging from room temperature (RT) to 300°C. The cross-sectional scanning electron microscopy (SEM) observation and X-ray diffraction analyses showed that the FZO thin films were of polycrystalline nature with a preferential growth along (002) plane perpendicular to the surface of the glass substrate. Secondary ion mass spectrometry (SIMS) analyses of the FZO thin films showed that there was incorporation of F atoms in the FZO thin films, even if the substrate temperature was 300°C. Finally, the effect of substrate temperature on the transmittance ratio, optical energy gap, Hall mobility, carrier concentration, and resistivity of the FZO thin films was also investigated.

Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells.

In this study, silicon nitride (SiNx) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiNx/PI substrates at room temperature (RT), 100 and 200 °C by radio frequency (RF) magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10-3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~1000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si) thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells' properties were also investigated. We had found that substrates to get the optimally solar cells' efficiency were 200 °C-deposited GZO-SiNx/PI.

Developing high-transmittance heterojunction diodes based on NiO/TZO bilayer thin films.

In this study, radio frequency magnetron sputtering was used to deposit nickel oxide thin films (NiO, deposition power of 100 W) and titanium-doped zinc oxide thin films (TZO, varying deposition powers) on glass substrates to form p(NiO)-n(TZO) heterojunction diodes with high transmittance. The structural, optical, and electrical properties of the TZO and NiO thin films and NiO/TZO heterojunction devices were investigated with scanning electron microscopy, X-ray diffraction (XRD) patterns, UV-visible spectroscopy, Hall effect analysis, and current-voltage (I-V) analysis. XRD analysis showed that only the (111) diffraction peak of NiO and the (002) and (004) diffraction peaks of TZO were observable in the NiO/TZO heterojunction devices, indicating that the TZO thin films showed a good c-axis orientation perpendicular to the glass substrates. When the sputtering deposition power for the TZO thin films was 100, 125, and 150 W, the I-V characteristics confirmed that a p-n junction characteristic was successfully formed in the NiO/TZO heterojunction devices. We show that the NiO/TZO heterojunction diode was dominated by the space-charge limited current theory.