Resonantly enhanced lumped-element O-band Mach-Zehnder modulator with an ultra-wide operating wavelength range.

We demonstrate an O-band resonantly enhanced Mach-Zehnder modulator utilizing highly overcoupled resonators with staggered resonance wavelengths that achieves an operating range of 6.6 nm (7.1 nm) with a 1 dB (3 dB) optical modulation amplitude penalty. It can be operated in a power-efficient lumped-element configuration without any tuning of the resonators in an extended temperature range of 80°C.

Wideband SiN pulse interleaver for optically-enabled analog-to-digital conversion: a device-to-system analysis with cyclic equalization.

We present the design and experimental characterization of a silicon nitride pulse interleaver based on coupled resonator optical waveguide filters. In order to achieve a targeted free spectral range of 1.44 THz, which is large given the reduced optical confinement of the silicon nitride platform, individual ring resonators are designed with tapered waveguides. Its application to time-interleaved photonically-assisted ADCs is analyzed by combining experimental characterization of the photonic integrated circuit with a comprehensive model of the entire ADC. The impact of fundamental signal distortion and noise sources affecting the converter is investigated and suitable equalization techniques at the digital signal processing level are evaluated. The novel application of a simple but powerful equalization filter in the DSP domain allows for a significant improvement of the digitized signal SNR. An ENOB of 5 over a 75 GHz bandwidth (150 GS/s) and an ENOB of 4.3 over a 100 GHz bandwidth (200 GS/s) are expected to be achievable with compact and off-the-shelf single-section semiconductor mode locked lasers, that can be further improved with lower noise light sources.

Sub-wavelength tunneling barrier in rib waveguide microring modulators with vanishing bending losses.

Silicon photonics ring resonators in rib waveguide configuration are among the most important components for wavelength-division-multiplexed communication networks. While the rib waveguide enables simple electrical connectivity in microring modulators and add-drop multiplexers, it also results in unacceptable bending losses once the circumference is shrunk below a few micrometers, limiting achievable free spectral ranges and resonant enhancements. We introduce a sub-wavelength tunneling barrier at the critical radius at which the conformally mapped effective index of the slab exceeds that of the waveguide in order to suppress these bending losses, while increasing the resonator's resistance only slightly. The fundamental working principle is explained and illustrated with a design study based on the finite difference eigenmode method. Three-dimensional finite difference time domain simulations verify the design and a proof-of-concept microring modulator is modeled based on the novel geometry.

Optically clocked switched-emitter-follower THA in a photonic SiGe BiCMOS technology.

In this paper a novel opto-electronic Track-and-Hold Amplifier (OE-THA) is presented. The OE-THA can be used as a sampler in a photonic analog-to-digital-converter (ADC). It is fabricated in a silicon photonic 250 nm SiGe BiCMOS technology to allow for monolithic integration of photonic and electronic components. The OE-THA chip exhibits a small signal bandwidth of over 65 GHz, a total harmonic distortion below -34 dB up to 75 GHz and a signal-to-noise and distortion ratio (SINAD) of over 35 dB (5.5 effective bits, ENOB) up to 45 GHz. The measured resolution bandwidth products result in a corresponding equivalent jitter of below 80 fs rms from 20 to 70 GHz. The best equivalent jitter is achieved at 41 GHz with a value of 55.8 fs rms. This is enabled by using a low-jitter optical pulse train, generated by a Mode-Locked-Laser (MLL), as an optical sampling clock. The circuit integrates all optical and electronic components besides the MLL. It draws 110 mA operated from a supply voltage of -4.6 V and occupies a silicon area of only 0.59 mm2.

Silicon nitride PIC-based multi-color laser engines for life science applications.

We implement a multi-color laser engine with silicon nitride photonic integrated circuit technology, that combines four fluorophore excitation wavelengths (405 nm, 488 nm, 561 nm, 640 nm) and splits them with variable attenuation among two output fibers used for different microscope imaging modalities. With the help of photonic integrated circuit technology, the volume of the multi-color laser engine's optics is reduced by two orders of magnitude compared to its commercially available discrete optics counterpart. Light multiplexing is implemented by means of a directional coupler based device and variable optical attenuation as well as fiber switching with thermally actuated Mach-Zehnder interferometers. Total insertion losses from lasers to output fibers are in the order of 6 dB at 488 nm, 561 nm, and 640 nm. Higher insertion losses at 405 nm can be further improved on. In addition to the system level results, spectrally resolved performance has been characterized for each of the developed devices.

Fundamental limitations of spectrally-sliced optically enabled data converters arising from MLL timing jitter.

The effect of phase noise introduced by optical sources in spectrally-sliced optically enabled DACs and ADCs is modeled and analyzed in detail. In both data converter architectures, a mode-locked laser is assumed to provide an optical comb whose lines are used to either synthesize or analyze individual spectral slices. While the optical phase noise of the central MLL line as well as of other optical carriers used in the analyzed system architectures have a minor impact on the system performance, the RF phase noise of the MLL fundamentally limits it. In particular, the corresponding jitter of the MLL pulse train is transferred almost one-to-one to the system-level timing jitter of the data converters. While MLL phase noise can in principle be tracked and removed by electronic signal processing, this results in electric oscillator phase noise replacing the MLL jitter and is not conducive in systems leveraging the ultra-low jitter of low-noise mode-locked lasers. Precise analytical models are derived and validated by detailed numerical simulations.

Broadband couplers for hybrid silicon-chalcogenide glass photonic integrated circuits.

We report on the design, fabrication and testing of three types of coupling structures for hybrid chalcogenide glass Ge23Sb7S70-Silicon (GeSbS-Si) photonic integrated circuit platforms. The first type is a fully etched GeSbS grating coupler defined directly in the GeSbS film. Coupling losses of 5.3 dB and waveguide-to-waveguide back-reflections of 3.4% were measured at a wavelength of 1553 nm. Hybrid GeSbS-to-Si butt couplers and adiabatic couplers transmitting light between GeSbS and Si single-mode waveguides were further developed. The hybrid butt couplers (HBCs) feature coupling losses of 2.7 dB and 9.2% back-reflection. The hybrid adiabatic couplers (HACs) exhibit coupling losses of 0.7 dB and negligible back-reflection. Both HBCs and HACs have passbands exceeding the 100 nm measurement range of the test setup. GeSbS grating couplers and GeSbS-to-Si waveguide couplers can be co-fabricated in the same process flow, providing, for example, a means to first couple high optical power levels required for nonlinear signal processing directly into GeSbS waveguides and to later transition into Si waveguides after attenuation of the pump. Moreover, GeSbS waveguides and HBC transitions have been fabricated on post-processed silicon photonics chips obtained from a commercially available foundry service, with a previously deposited 2 µm thick top waveguide cladding. This fabrication protocol demonstrates the compatibility of the developed integration scheme with standard silicon photonics technology with a complete back-end-of-line process.

Wideband multi-stage CROW filters with relaxed fabrication tolerances.

We present wideband and large free spectral range optical filters with steep passband edges for the selection of adjacent WDM communication channels that can be reliably fabricated with mainstream silicon photonics technology. The devices are based on three cascaded stages of coupled resonator optical waveguides loaded on a common bus waveguide. These stages differ in the number of resonators but are implemented with exactly identical unit cells, comprised of a matched racetrack resonator layout and a uniform spacing between cells. The different number of resonators in each stage allows a high rejection in the through port response enabled by the interleaved distribution of zeros. Furthermore, the exact replication of a unique cell avoids the passband ripple and high lobes in the stopband that typically arise in apodized coupled resonator optical waveguide based filters due to fabrication and coupling induced variations in the effective path length of each resonator. Silicon photonics filters designed for the selection of 9 adjacent optical carriers generated by a 100 GHz free spectral range comb laser have been successfully fabricated with 248 nm DUV lithography, achieving an out-of-band rejection above 11 dB and an insertion loss of less than 0.5 dB for the worst channels.

High-Q inverted silica microtoroid resonators monolithically integrated into a silicon photonics platform.

We report on the monolithic integration of a new class of reflown silica microtoroid resonators with silicon nanowaveguides fabricated on top of the silica film. Connectivity with other silicon photonics devices is enabled by inversion of the toroid geometry, defined by etching a circular opening rather than a disk in an undercut silica membrane. Intrinsic quality factors of up to 2 million are achieved and several avenues of process improvement are identified that can help attain the higher quality factors (> 108) that are possible in reflown microtoroids. Moreover, due to the microtoroid being formed by standard microfabrication and post-processing by local laser induced heating, these devices are in principle compatible with monolithic co-fabrication with other electro-optic components.

Air-clad suspended nanocrystalline diamond ridge waveguides.

A hybrid group IV ridge waveguide platform is demonstrated, with potential application across the optical spectrum from ultraviolet to the far infrared wavelengths. The waveguides are fabricated by partial etching of sub-micron ridges in a nanocrystalline diamond thin film grown on top of a silicon wafer. To create vertical confinement, the diamond film is locally undercut by exposing the chip to an isotropic fluorine plasma etch via etch holes surrounding the waveguides, resulting in a mechanically stable suspended air-clad waveguide platform. Optical characterization of the waveguides at 1550 nm yields an average optical loss of 4.67 ± 0.47 dB/mm. Further improvement to the fabrication process is expected to significantly reduce this waveguide loss.

8-channel WDM silicon photonics transceiver with SOA and semiconductor mode-locked laser.

We demonstrate an integrated 8 by 14 Gbps dense wavelength division multiplexed silicon photonics transceiver that makes use of an external mode-locked laser as a light source and a single semiconductor optical amplifier for post-modulation signal amplification. Remaining components necessary for modulation, filtering and (de­)multiplexing are monolithically integrated in a single chip. In all system experiments, all eight channels are jointly operated with independent data streams in order to include impairments arising out of nonlinear effects inside the SOA while benchmarking the system performance. The transmitter, measured with a commercial reference receiver, supports on-off keying data transmission with an uncorrected BER ranging between 1e-5 and 5e-7 for all channels in back-to-back configuration and between 8e-4 and 1e-5 after 10 km transmission (both PRBS 231-1). The three best channels of the full link consisting in the silicon photonics transmitter operated with the silicon photonics receiver in back-to-back configuration maintain a BER better than the targeted 5e-5. Based on link budget modeling, we expect this target to be reached for all 8 channels pending improvement of the receiver offset compensation loop.

High-speed resonantly enhanced silicon photonics modulator with a large operating temperature range.

We present a novel resonant Mach-Zehnder modulator whose arms are each loaded with five identical resonators. Size and power consumption are aggressively reduced compared to conventional modulators based on linear phase shifters. At the same time, a large optical bandwidth of 3.8 nm is maintained. We experimentally demonstrate open eye diagrams at 30 Gbps with a signal Q-factor remaining within a factor of 2 of its peak value in an operational temperature range spanning 55°C.

Low V(π) Silicon photonics modulators with highly linear epitaxially grown phase shifters.

We report on the design of Silicon Mach-Zehnder carrier depletion modulators relying on epitaxially grown vertical junction diodes. Unprecedented spatial control over doping profiles resulting from combining local ion implantation with epitaxial overgrowth enables highly linear phase shifters with high modulation efficiency and comparatively low insertion losses. A high average phase shifter efficiency of VπL = 0.74 V⋅cm is reached between 0 V and 2 V reverse bias, while maintaining optical losses at 4.2 dB/mm and the intrinsic RC cutoff frequency at 48 GHz (both at 1 V reverse bias). The fabrication process, the sensitivity to fabrication tolerances, the phase shifter performance and examples of lumped element and travelling wave modulators are modeled in detail. Device linearity is shown to be sufficient to support complex modulation formats such as 16-QAM.

Silicon nitride CMOS-compatible platform for integrated photonics applications at visible wavelengths.

Silicon nitride is demonstrated as a high performance and cost-effective solution for dense integrated photonic circuits in the visible spectrum. Experimental results for nanophotonic waveguides fabricated in a standard CMOS pilot line with losses below 0.71dB/cm in an aqueous environment and 0.51dB/cm with silicon dioxide cladding are reported. Design and characterization of waveguide bends, grating couplers and multimode interference couplers (MMI) at a wavelength of 660 nm are presented. The index contrast of this technology enables high integration densities with insertion losses below 0.05 dB per 90° bend for radii as small as 35 µm. By a proper design of the buried oxide layer thickness, grating couplers with efficiencies above 38% for the TE polarization have been obtained.

Silicon photonics plasma-modulators with advanced transmission line design.

We have investigated two novel concepts for the design of transmission lines in travelling wave Mach-Zehnder interferometer based Silicon Photonics depletion modulators overcoming the analog bandwidth limitations arising from cross-talk between signal lines in push-pull modulators and reducing the linear losses of the transmission lines. We experimentally validate the concepts and demonstrate an E/O -3 dBe bandwidth of 16 GHz with a 4V drive voltage (in dual drive configuration) and 8.8 dB on-chip insertion losses. Significant bandwidth improvements result from suppression of cross-talk. An additional bandwidth enhancement of ~11% results from a reduction of resistive transmission line losses. Frequency dependent loss models for loaded transmission lines and E/O bandwidth modeling are fully verified.

Visible wavelength silicon nitride focusing grating coupler with AlCu/TiN reflector.

High-performance silicon nitride focusing grating couplers with AlCu/TiN reflectors for a visible wavelength (660 nm) have been designed and fabricated in a standard complementary metal-oxide-semiconductor pilot line. The influence of the bottom oxide cladding thickness on the grating decay length and efficiency is theoretically and experimentally investigated. It is shown how the metal reflector not only increases the efficiency but also allows reduction of the radiated beam size. Coupling efficiencies above 59% have been measured for compact focusing gratings.

Multi-color flow cytometer with PIC-based structured illumination.

We demonstrate a flow cytometer in which structured light illumination is used to attribute fluorescent and scattering signals to their excitation wavelength. A suitable multi-color light source emitting structured illumination patterns at 405, 488, 561 and 640 nm is developed based on a silicon nitride photonic integrated circuit and cytometry experiments are conducted with calibration beads. Performance metrics of the novel cytometer are compared with those of a mature, commercial device. While the experimental device still features a slightly higher sensitivity floor than the commercial one, all but the most weakly stained beads can be categorized. These promising results validate the feasibility of the proposed concept.

Optical detection of target molecule induced aggregation of nanoparticles by means of high-Q resonators.

We theoretically investigate a novel scheme to detect target molecule induced, or suppressed, aggregation of nanoparticles. High-Q optical resonators are used to both optically trap gold nanoparticle clusters and to detect their presence via a shift in the resonance wavelength. The well depth of the optical trap is chosen to be relatively low compared to the thermal energy of the nanoparticles, so that trapping of single nanoparticles is marginal and results in a comparatively small wavelength shift. Aggregation of functionalized gold nanoparticles is mediated or suppressed via binding to a target molecule. The well depth for the resulting nanoparticle clusters scales much more favorably relative to Brownian motion, resulting in large nanoparticle concentration enhancements in the evanescent field region of the resonator. We predict a target molecule sensitivity in the tens of fM range. In order to predict the resonator response, a complete theory of time resolved nanoparticle cluster trapping dynamics is derived. In particular, the formalism of Kramers' escape time is adapted to 2D (silicon wire) and 3D (ring resonator) optical traps.

Design of transmission line driven slot waveguide Mach-Zehnder interferometers and application to analog optical links.

Slot waveguides allow joint confinement of the driving electrical radio frequency field and of the optical waveguide mode in a narrow slot, allowing for highly efficient polymer based interferometers. We show that the optical confinement can be simply explained by a perturbation theoretical approach taking into account the continuity of the electric displacement field. We design phase matched transmission lines and show that their impedance and RF losses can be modeled by an equivalent circuit and linked to slot waveguide properties by a simple set of equations, thus allowing optimization of the device without iterative simulations. We optimize the interferometers for analog optical links and predict record performance metrics (V(pi) = 200 mV @ 10 GHz in push-pull configuration) assuming a modest second order nonlinear coefficient (r(33) = 50 pm/V) and slot width (100 nm). Using high performance optical polymers (r(33) = 150 pm/V), noise figures of state of the art analog optical links can be matched while reducing optical power levels by approximately 30 times. With required optical laser power levels predicted at 50 mW, this could be a game changing improvement by bringing high performance optical analog link power requirements in the reach of laser diodes. A modified transmitter architecture allows shot noise limited performance, while reducing power levels in the slot waveguides and enhancing reliability.

Hybrid multi-chip assembly of optical communication engines by in situ 3D nano-lithography.

Three-dimensional (3D) nano-printing of freeform optical waveguides, also referred to as photonic wire bonding, allows for efficient coupling between photonic chips and can greatly simplify optical system assembly. As a key advantage, the shape and the trajectory of photonic wire bonds can be adapted to the mode-field profiles and the positions of the chips, thereby offering an attractive alternative to conventional optical assembly techniques that rely on technically complex and costly high-precision alignment. However, while the fundamental advantages of the photonic wire bonding concept have been shown in proof-of-concept experiments, it has so far been unclear whether the technique can also be leveraged for practically relevant use cases with stringent reproducibility and reliability requirements. In this paper, we demonstrate optical communication engines that rely on photonic wire bonding for connecting arrays of silicon photonic modulators to InP lasers and single-mode fibres. In a first experiment, we show an eight-channel transmitter offering an aggregate line rate of 448 Gbit/s by low-complexity intensity modulation. A second experiment is dedicated to a four-channel coherent transmitter, operating at a net data rate of 732.7 Gbit/s - a record for coherent silicon photonic transmitters with co-packaged lasers. Using dedicated test chips, we further demonstrate automated mass production of photonic wire bonds with insertion losses of (0.7 ± 0.15) dB, and we show their resilience in environmental-stability tests and at high optical power. These results might form the basis for simplified assembly of advanced photonic multi-chip systems that combine the distinct advantages of different integration platforms.