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1.
Materials (Basel) ; 12(15)2019 Aug 01.
Artículo en Inglés | MEDLINE | ID: mdl-31374963

RESUMEN

Carbon, a compensator in GaN, is an inherent part of the organometallic vapor phase epitaxy (OMVPE) environment due to the use of organometallic sources. In this study, the impact of growth conditions are explored on the incorporation of carbon in GaN prepared via OMVPE on pseudo-bulk GaN wafers (in several cases, identical growths were performed on GaN-on-Al2O3 templates for comparison purposes). Growth conditions with different growth efficiencies but identical ammonia molar flows, when normalized for growth rate, resulted in identical carbon incorporation. It is concluded that only trimethylgallium which contributes to growth of the GaN layer contributes to carbon incorporation. Carbon incorporation was found to decrease proportionally with increasing ammonia molar flow, when normalized for growth rate. Ammonia molar flow divided by growth rate is proposed as a reactor independent predictor of carbon incorporation as opposed to the often-reported input V/III ratio. A low carbon concentration of 7.3 × 1014 atoms/cm3 (prepared at a growth rate of 0.57 µm/h) was obtained by optimizing growth conditions for GaN grown on pseudo-bulk GaN substrates.

2.
Appl Phys Lett ; 103(1): 13701, 2013 Jul 01.
Artículo en Inglés | MEDLINE | ID: mdl-23918992

RESUMEN

A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The Au NP/HEMT biosensor system electrically detected 1 pM SRC kinase in ionic solutions. These results are pertinent to drug development applications associated with kinase sensing.

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