Risk factors for gingival invagination: A retrospective study.

AIM: This study aimed to identify the risk factors for gingival invagination during orthodontic treatment after premolar extraction. MATERIALS AND METHODS: The medical records of 135 patients who had undergone interdental space closure after premolar extraction were collected, and cone beam computed tomography was performed to determine the presence of gingival invagination. The risk factors were examined using mixed-effects models and generalized propensity score weighting (GPSW) to develop a predictive model. RESULTS: Univariate analysis revealed that the extraction site, buccal bone thickness 4 mm apical to the cemento-enamel junction (MB1), mid-root buccal bone thickness (MB2) and vertical skeletal relationships were related to gingival invagination (p < .05). Furthermore, a subsequent multivariable mixed-effects model analysis indicated a significantly increased risk of gingival invagination at MB1 < 1 mm (p < .001; odds ratio [ORMB1≤0.5mm] = 29.304; 95% confidence interval [CI]: 8.986-93.807; OR0.5

[Development and application of Japanese kampo medicine granules].

This article explores the development process of Japanese kampo medicine granules, which may be related to the popularization of convenience coffee in Japan in the 1940s. The development achievements were made mainly by two people: Itakura Takeshi and Watanabe Takeshi.Itakura Takeshi made the granule in 1944, and Watanabe Takeshi published an article about granule in 1947. In 1950, the granules were applied to clinic by Hosoya Shirou. In 1957, Kotaro pharmaceutical Co. Ltd was the first to sell granules in the market. Ten years later, in 1967, five classes and six kinds of drugs entered the Japanese medical insurance system, which has epoch-making significance in the history of the development of kampo medicine. Later, the guidelines of application and management for granules-The Handbook of Kampo Medicine Prescriptions for General Use-were formulated by experts convened by the Ministry of Health and Welfare of Japan, it had a great influence on clinical application. At the same time, Japan Pharmaceutical Manufacturers Association played a good coordinating role in the process of drug production and marketing.

Catalyst-free synthesis of well-aligned ZnO nanowires on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N substrates.

Well-aligned ZnO nanowires have been synthesized vertically on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N substrates, using a catalyst-free carbon thermal-reduction vapor phase deposition method for the first time. The as-synthesized nanowires are single crystalline wurtzite structure, and have a growth direction of [0001]. Each nanowire has a smooth surface, and uniform diameter along the growth direction. The average diameter and length of these nanowires are 120-150 nm, and 3-10 )m, respectively. We suggest that the growth mechanism follow a self-catalyzing growth model. Excitonic emission peaked around 385 nm dominates the room-temperature photoluminescence spectra of these nanowires. The room-temperature photoluminescence and Raman scattering spectra show that these nanowires have good optical quality with very less structural defects.

Synthesis and optical properties of ZnTe single-crystalline nanowires.

Single-crystalline ZnTe nanowires with the zincblende structure have been synthesized on silicon (Si) substrates via a vapor phase transport method. The ZnTe (99.99%) powders were used as the source, and 10 nm-thick thermal evaporated gold (Au) film was used as the catalyst. The as-prepared ZnTe nanowires have diameters of 30-80 nm and lengths of more than 10 microm. The products were analyzed by X-ray diffraction, field emission scanning electron microscopy, and high-resolution transmission electron microscopy. Optical properties of these nanowires were investigated by room-temperature Raman scattering spectrum and temperature-dependent photoluminescence measurements. The results show that the as-prepared ZnTe nanowires are of high crystal quality.

Strong enhancement of Er(3+) 1.54 µm electroluminescence through amorphous Si nanoparticles.

The roles of amorphous Si nanoparticles in light-emitting diodes (LEDs) based on Er-doped Si(1+x)O(2) films (x representing the degree of Si content, and varying widely from 0 to 4.50) have been investigated. In the aspect of the LEDs' electrical performance, it was found that the incorporation of Si nanoparticles facilitates the electrical conductivity of the films by improving the carrier mobility. With x increasing from 0 to 4.50, the mobility increases monotonically up to 5 times. The efficiency of Er(3+) electroluminescence (EL) at 1.54 µm can be enhanced by as much as 160 times when the degree of Si content x is 2.00, coincident with the value at which the rate of mobility increasing versus x slows down. The fact that the maximum of EL efficiency and the slowing down of the rate of increase of mobility occur at the same x value can be explained by coalescence of Si nanoparticles starting at x = 2.

Blueshift of electroluminescence from single n-InP nanowire/p-Si heterojunctions due to the Burstein-Moss effect.

Single-crystalline n-type InP nanowires (NWs) with different electron concentrations were synthesized on Si substrates via the vapor phase transport method. The electrical properties of the InP nanowires were investigated by fabricating and measuring single NW field-effect transistors (FETs). Single InP NW/p(+)-Si heterojunctions were fabricated, and electroluminescence (EL) spectra from them were studied. It was found that both the photoluminescence (PL) spectra of the InP NWs and the EL spectra of the heterojunctions blueshift from 920 to 775 nm when the electron concentrations of the InP NWs increase from 2 × 10(17) to 1.4 × 10(19) cm(-3). The blueshifts can be attributed to the Burstein-Moss effect rather than the quantum confinement effect in the InP NWs. The large blueshifts observed in this study indicate a potential application of InP NWs in nano-multicolour displays.

Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique.

GaN nanotip triangle pyramids were synthesized on 3C-SiC epilayer via an isoelectronic In-doping technique. The synthesis was carried out in a specially designed two-hot-boat chemical vapor deposition system. In (99.999%) and molten Ga (99.99%) with a mass ratio of about 1:4 were used as the source, and pieces of Si (111) wafer covered with 400-500 nm 3C-SiC epilayer were used as the substrates. The products were analyzed by x-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, selected area electron diffraction, Raman spectroscopy, and photoluminescence measurements. Our results show that the as-synthesized GaN pyramids are perfect single crystal with wurtzite structure, which may have potential applications in electronic/photonic devices.