A hybrid topological quantum state in an elemental solid.

Topology1-3 and interactions are foundational concepts in the modern understanding of quantum matter. Their nexus yields three important research directions: (1) the competition between distinct interactions, as in several intertwined phases, (2) the interplay between interactions and topology that drives the phenomena in twisted layered materials and topological magnets, and (3) the coalescence of several topological orders to generate distinct novel phases. The first two examples have grown into major areas of research, although the last example remains mostly unexplored, mainly because of the lack of a material platform for experimental studies. Here, using tunnelling microscopy, photoemission spectroscopy and a theoretical analysis, we unveil a 'hybrid' topological phase of matter in the simple elemental-solid arsenic. Through a unique bulk-surface-edge correspondence, we uncover that arsenic features a conjoined strong and higher-order topology that stabilizes a hybrid topological phase. Although momentum-space spectroscopy measurements show signs of topological surface states, real-space microscopy measurements unravel a unique geometry of topologically induced step-edge conduction channels revealed on various natural nanostructures on the surface. Using theoretical models, we show that the existence of gapless step-edge states in arsenic relies on the simultaneous presence of both a non-trivial strong Z2 invariant and a non-trivial higher-order topological invariant, which provide experimental evidence for hybrid topology. Our study highlights pathways for exploring the interplay of different band topologies and harnessing the associated topological conduction channels in engineered quantum or nano-devices.

Large Field-like Spin-Orbit Torque and Enhanced Magnetization Switching Efficiency Utilizing Amorphous Mo.

Spin-orbit torque magnetic random access memory (SOT-MRAM) has great promise in high write speed and low power consumption. Mo can play a vital role in constructing a CoFeB/MgO-based MRAM cell because of its ability to enhance the perpendicular magnetic anisotropy (PMA), thermal tolerance, and tunneling magnetoresistance. However, Mo is often considered as a less favorable candidate among SOT materials because of its weak spin-orbit coupling. In this study, we experimentally investigate the SOT efficiencies in Mo/CoFeB/MgO heterostructures over a wide range of Mo thicknesses and temperature. Decent damping-like SOT efficiency |ξDL| = 0.015 ± 0.001 and field-like SOT efficiency |ξFL| = 0.050 ± 0.001 are found in amorphous Mo. The ξFL/ξDL ratio is greater than 3. Furthermore, efficient current-induced magnetization switching is demonstrated with the critical current density comparable with heavy metal Ir and W. Our work reveals new understanding and possibilities for Mo as both an SOT source component and PMA buffer layer in the implementation of SOT-MRAMs.

Magneto-ionic Control of Ferrimagnetic Order by Oxygen Gating.

Ferrimagnets are considered an excellent spintronic material candidate which combines ultrafast magnetic dynamics and straightforward electrical detectability. However, efficient routes toward magneto-ionic control of ferrimagnetic order remain elusive. In this study, a solid-state oxygen gating device was designed to control the magnetic properties of the ferrimagnetic CoTb alloy. Experimental results show that applying a small voltage can irreversibly tune a Tb-dominant device to a stable Co-dominant state and decrease the magnetization compensation temperature by 130 K. In addition, a reversible voltage control of the magnetization axis between out-of-plane and in-plane states is observed, which indicates that the migrated oxygen ions can bond to both Tb and Co sublattices. First-principles calculations indicate that voltage can dynamically control the flow-in and flow-out of oxygen ions that bond to the Co sublattice. Our work provides an effective means to manipulate ferrimagnetic order and contributes to the development of ultra-low-power spintronic devices.

Coexistence of Magnon-Induced and Rashba-Induced Unidirectional Magnetoresistance in Antiferromagnets.

Unidirectional magnetoresistance (UMR) has been intensively studied in ferromagnetic systems, which is mainly induced by spin-dependent and spin-flip electron scattering. Yet, UMR in antiferromagnetic (AFM) systems has not been fully understood to date. In this work, we reported UMR in a YFeO3/Pt heterostructure where YFeO3 is a typical AFM insulator. Magnetic-field dependence and temperature dependence of transport measurements indicate that magnon dynamics and interfacial Rashba splitting are two individual origins for AFM UMR, which is consistent with the UMR theory in ferromagnetic systems. We further established a comprehensive theoretical model that incorporates micromagnetic simulation, density functional theory calculation, and the tight-binding model, which explain the observed AFM UMR phenomenon well. Our work sheds light on the intrinsic transport property of the AFM system and may facilitate the development of AFM spintronic devices.

Direct Observation of Magnetic Skyrmions and Their Current-Induced Dynamics in Epitaxial Single-Crystal Oxide Films.

Magnetic skyrmions are scarcely investigated for single-crystal quality films, for which skyrmions may have a remarkable performance. Even in the limited studies in this aspect, the skyrmions are usually probed by the topological Hall effect, missing important information on dynamic properties. Here, we present a comprehensive investigation on the generation/manipulation of magnetic skyrmions in La0.67Ba0.33MnO3 single-crystal films. Using the technique of magnetic force microscopy, the current-driven skyrmion dynamics are directly observed. Unlike isolated skyrmions produced by magnetic field alone, closely packed skyrmions can be generated by electric pulses in a magnetic background, with a high density (∼60/µm2) and a small size (dozens of nanometers). The threshold current moving skyrmions is ∼2.3 × 104 A/cm2, 2-3 orders of magnitude lower than that required by metallic multilayers or van der Waals ferromagnetic heterostructures. Our work demonstrates the great potential of single-crystal oxide films in developing skyrmion-based devices.

Spin-charge interconversion of two-dimensional electron gases at oxide interfaces.

Oxide two-dimensional electron gas (2DEG) is a low-dimensional carrier system formed at the interface of oxide heterojunctions with strong and tunable Rashba spin-orbit coupling which makes oxide 2DEG an ideal platform for converting spin current and charge current. This review provides a summary of the recent advances on the 2DEGs at oxide interfaces for spin-charge interconversion. On one hand, we analyze properties and the efficiency of the spin-to-charge conversion through different ways of spin current injection. On the other hand, the conversion of charge current to spin current under different experimental methods has been summarized. These research achievements provide perspectives and methods for understanding and regulating the spin-charge interconversion of the 2DEG at the oxide interface.

Unidirectional spintronic terahertz emitters with high efficiency.

Due to the high performance and low cost, spintronic terahertz emitters (STEs) have been a hot topic in the field of terahertz sources. However, most of the research focuses on the THz generation process and little attention has been paid to the control and modulation of the THz wave generated by the STE. In this Letter, a unidirectional spintronic terahertz emitter (USTE) integrating a common STE with a metal grating is proposed to manipulate the THz emission process. The dyadic Green's function method and finite element method are adopted to survey the characteristics of the USTE. Simulations show that the metal grating not only has a transmission larger than 97% in the optical band, but also has a higher reflectivity larger than 99% in the THz band. As a result, the USTE has a unidirectional THz emission along the direction of the pump beam with a larger than 4-fold enhancement in intensity. Moreover, the USTE has the capability of tuning the central frequency and THz wave steering by adjusting the distance and angle between the STE and the metal grating. We believe that this USTE can be used in THz wireless communications and holographic imaging, especially in the field of THz bio-sensing, which needs some resonance frequencies to sense.

Sign Change of Spin-Orbit Torque in Pt/NiO/CoFeB Structures.

Antiferromagnetic insulators have recently been proved to support spin current efficiently. Here, we report the dampinglike spin-orbit torque (SOT) in Pt/NiO/CoFeB has a strong temperature dependence and reverses the sign below certain temperatures, which is different from the slight variation with temperature in the Pt/CoFeB bilayer. The negative dampinglike SOT at low temperatures is proposed to be mediated by the magnetic interactions that tie with the "exchange bias" in Pt/NiO/CoFeB, in contrast to the thermal-magnon-mediated scenario at high temperatures. Our results highlight the promise to control the SOT through tuning the magnetic structure in multilayers.

Generation of tailored terahertz waves from monolithic integrated metamaterials onto spintronic terahertz emitters.

Recently emerging spintronic terahertz (THz) emitters, featuring many appreciable merits such as low-cost, high efficiency, ultrabroadband, and ease of integration, offer multifaceted capabilities not only in understanding the fundamental ultrafast magnetism physics but also for exploring multifarious practical applications. Integration of various flexible and tunable functions at the source such as polarization manipulation, amplitude tailoring, phase modulation, and radiation beam steering with the spintronic THz emitters and their derivatives can yield more compact and elegant devices. Here, we demonstrate a monolithic metamaterial integrated onto a W/CoFeB/Pt THz nanoemitter for a purpose-designed functionality of the electromagnetically induced transparency analog. Through elaborate engineering the asymmetry degree and geometric parameters of the metamaterial structure, we successfully verified the feasibility of monolithic modulations for the radiated THz waves. The integrated device was eventually compared with a set of stand-alone metamaterial positioning scenarios, and the negligible frequency difference between two of the positioning schemes further manifests almost an ideal realization of the proposed monolithic integrated metamaterial device with a spintronic THz emitter. We believe that such adaptable and scalable devices may make valuable contributions to the designable spintronic THz devices with pre-shaping THz waves and enable chip-scale spintronic THz optics, sensing, and imaging.

Fully controllable three-dimensional light-induced longitudinal magnetization using a single objective lens.

With features of fast and energy-efficient data writing, all-optical helicity-dependent switching (AO-HDS) has emerged as a competitive technology to satisfy the demand for the next-generation volume data storage. Unfortunately, to switch the magnetizations in different positions of the magnetic-optic film, the laser beam, the objective lens, or the magnetic recording film should be moved, limiting the advantage of AO-HDS in fast data writing. To achieve on-the-fly magnetization switching, the induced magnetization should be fully controllable. In this Letter, by focusing an azimuthally polarized vortex beam (APVB) and introducing an additional phase, a feasible strategy constructing subwavelength light-induced pure longitudinal multi-magnetization spots is proposed. In addition, the position of the multi-magnetization spots can be dynamically controlled. The distributions of the focused APVBs with different orbital angular momentum, and the induced magnetizations are surveyed. We believe that this is a practical and flexible three-dimensional magnetic recording technique with dynamic control of the recording position.

Robust phase shift keying modulation method for spin torque nano-oscillator.

The spin torque nano-oscillator (STNO) is a very promising candidate for next generation telecommunication systems due to its small size ~100 nm and high output frequency range. However, it still suffers low output power, usually smaller than µW, and very high phase noise. Also, the modulation method for the STNO should be further developed. The frequency modulation and amplitude modulation method for STNO can be easily applied because of the non-linear nature of STNO, yet it is very rare to see the proposal of a phase modulation method. In this work, we propose a robust phase shift keying modulation method for STNO. Its feasibility is demonstrated with both theoretical and numerical analysis, and its robustness is investigated under room temperature thermal noise. It is shown that our proposed phase modulation method can tune the phase arbitrarily, while the modulation speed can be as fast as 10 ns at room temperature. Comparing with the other phase modulation method, our approach has advantages of larger phase tuning range and stronger robustness against thermal noise.

Enhanced interfacial Dzyaloshinskii-Moriya interactions in annealed Pt/Co/MgO structures.

The interfacial Dzyaloshinskii-Moriya interaction (iDMI) is attracting great interest for spintronics. An iDMI constant larger than 3 mJ m-2 is expected to minimize the size of skyrmions and to optimize the domain-wall dynamics. In this study, we experimentally demonstrate a giant iDMI in Pt/Co/X/MgO ultra-thin film structures with perpendicular magnetization. The iDMI constants were measured using a field-driven creep regime domain expansion method. The enhancement of iDMI with an atomically thin insertion of Ta and Mg is comprehensively understood with the help of ab-initio calculations. Thermal annealing has been used to crystallize the MgO thin layer to improve the tunneling magneto-resistance (TMR), but interestingly it also provides a further increase of the iDMI constant. An increase of the iDMI constant of up to 3.3 mJ m-2 is shown, which is promising for the scaling down of skyrmion electronics.

Amplitude and frequency modulation based on memristor-controlled spin nano-oscillators.

Spin transfer nano-oscillators (STNOs) are a new type of radio frequency (RF) oscillators that utilize the current-induced magnetization precession in a magnetic tunnel junction device to generate high frequency microwave signal. Since both the frequency and the amplitude of STNOs can be tuned by changing the current, they are potentially used for amplitude shift keying and frequency shift keying modulation without the need for an RF mixer, which leads to compact RF components. In this letter, a novel strategy is proposed to modulate the frequency and the amplitude by memristor-controlled spin nano-oscillators, whereby the STNO is responsible for microwave emitting and memristor serves as a current regulator which further modulates the frequency and amplitude. In addition, the I-V curves show that a multilevel resistance behavior can also be achieved in the same architecture.

Monitoring the failure forms of a composite laminate system by using panda polarization maintaining fiber Bragg gratings.

In this paper, the property of panda polarization maintaining fiber Bragg gratings (PPM-FBGs) embedded in a composite laminate system (CLS) under a transversal force from 1 × 105 Pa to 5 × 105 Pa is explored. Both the wavelengths shift and the rotation angle of the principal axes of the PPM-FBGs are surveyed theoretically. We investigate the corresponding relation between the direction of external force and the rotation angle of principal axes of the PPM-FBGs and prove that the magnitude and direction of the strain distribution in the CLS can be monitored simultaneously, which can realize the detection of interlaminar damage of the CLS. We find that the strain, which corresponds to the shift of wavelengths of the PPM-FBGs, has a different angular dependence, and therefore the potential failure forms of the CLS can be differentiated.

Ultra-efficient spin-orbit torque induced magnetic switching in W/CoFeB/MgO structures.

Spin-orbit torque (SOT) induced magnetic switching in heavy metal/ferromagnet structures with perpendicular magnetic anisotropy (PMA) is promising for energy efficient spintronic devices. Here, we studied the SOT induced magnetic switching in perpendicular W/Co20Fe60B20/MgO structures. We demonstrated the critical current density for the SOT induced switching is as low as 1.15 × 106 A cm-2 in the presence of an in-plane magnetic field, which is very energy efficient in terms of magnetic switching. We attribute this ultra-efficient magnetic switching to the high spin Hall angle of the W layer and the ultra-low domain wall pinning field of the CoFeB. The SOT induced switching procedure was directly observed by a high-resolution Kerr microscopy. Furthermore, the weak Dzyaloshinsky-Moriya interactions are shown to be favorable for switching. Our experiments physically explained the ultra-efficient SOT induced magnetic switching in W/CoFeB/MgO structures, and direct observation of the switching procedure can improve the comprehensive understanding of this dynamic process and further promote the study of SOT based memory devices.

Field-free spin-orbit-torque switching of perpendicular magnetization aided by uniaxial shape anisotropy.

It has been demonstrated that the switching of perpendicular magnetization can be achieved with spin-orbit torque (SOT) at an ultrafast speed and low energy consumption. However, to make the switching deterministic, an undesirable magnetic field or unconventional device geometry is required to break the structure inverse symmetry. Here we propose a novel scheme for SOT-induced field-free deterministic switching of perpendicular magnetization. The proposed scheme can be implemented in a simple magnetic tunnel junction (MTJ)/heavy-metal system, without the need of complicated device structure. The perpendicular-anisotropy MTJ is patterned into elliptical shape and misaligned with the axis of the heavy metal, so that the uniaxial shape anisotropy aids the magnetization switching. Furthermore, unlike the conventional switching scheme where the switched final magnetization state is dependent on the direction of the applied current, in our scheme the bipolar switching is implemented by choosing different current paths, which offers a new freedom for developing novel spintronics memories or logic devices. Through the macrospin simulation, we show that a wide operation window of the applied current pulse can be obtained in the proposed scheme. The precise control of pulse amplitude or pulse duration is not required. The influences of key parameters such as damping constant and field-like torque strength are discussed as well.

Polarization-maintaining fiber composed of an elliptical ring core and two circular air holes.

In this paper, a new polarization-maintaining fiber (PMF) composed of an elliptical ring core and two circular air holes is exploited. The PMF could support 10 guided modes with refractive index differences $\Delta {n_{{\rm eff}}}$Δneff of all the adjacent modes larger than ${{10}^{ - 4}}$10-4. Moreover, the optimum parameters of the PMF covering the entire $C + L$C+L band are obtained. Last, the chromatic dispersion $D$D of the designed elliptical ring core fiber, the confinement loss $\alpha $α, and the power fraction $\chi $χ of the two-air core are calculated. The calculation results show that $D$D, $\alpha $α, and $\chi $χ are compatible with traditional step-index fiber, and the designed elliptical ring core fiber is suitable for mode-division multiplexing and optical fiber sensors.

Magnetic Cell Centrifuge Platform Performance Study with Different Microsieve Pore Geometries.

The detection and analysis of circulating tumor cells (CTCs) plays a crucial role in clinical practice. However, the heterogeneity and rarity of CTCs make their capture and separation from peripheral blood very difficult while maintaining their structural integrity and viability. We previously demonstrated the effectiveness of the Magnetic Cell Centrifuge Platform (MCCP), which combined the magnetic-labeling cell separation mechanism with the size-based method. In this paper, a comparison of the effectiveness of different microsieve pore geometries toward MCCP is demonstrated to improve the yield of the target cell capture. Firstly, models of a trapped cell with rectangular and circular pore geometries are presented to compare the contact force using finite element numerical simulations. The device performance is then evaluated with both constant pressure and constant flow rate experimental conditions. In addition, the efficient isolation of magnetically labeled Hela cells with red fluorescent proteins (target cells) from Hela cells with green fluorescent protein (background cells) is validated. The experimental results show that the circular sieves yield 97% purity of the target cells from the sample with a throughput of up to 2 µL/s and 66-fold sample enrichment. This finding will pave the way for the design of a higher efficient MCCP systems.

Strain sensing based on a microbottle resonator with cleaned-up spectrum.

In this Letter, a microbottle-resonator-based strain sensor with individual mode distribution and recognizable resonance spectrum was proposed and demonstrated. A cleaned-up spectrum was achieved by inscribing horizontal microgroove scars close to the bottle center. The inscribing parameters of these grooves were designed according to the field distribution of the modes, and the obtained spectrum showed excellent consistency with theoretical analysis. The shift in the resonance peak with increasing stretching force was investigated, and the corresponding strain sensitivities were 0.085 pm/µÏµ for transverse electric polarization and 0.136 pm/µÏµ for transverse magnetic polarization, which could be further increased by using materials with smaller elastic moduli.

Magnetoresistive sensors based on the elasticity of domain walls.

Magnetic sensors based on magnetoresistance effects have promising application prospects due to their excellent sensitivity and their advantages in terms of integration. However, the competition between higher sensitivity and a larger measuring range remains a problem. Here, we propose a novel mechanism for designing magnetoresistive sensors: probing the perpendicular field by detecting the expansion of the elastic magnetic domain wall in the free layer of a spin valve or a magnetic tunnel junction. The performances of devices based on this mechanism, such as the sensitivity and the measuring range, can be tuned by manipulating the geometry of the device. This can be achieved without changing the intrinsic properties of the material, thus promising a higher integration level and a better performance. The mechanism is theoretically explained based on the experimental results. Two examples are proposed and their functionality and performances are verified via a micromagnetic simulation.