RESUMEN
Improving power conversion efficiencies (PCEs) and stability are two main tasks for organic photovoltaic (OPV) cells. In the past few years, although the PCE of the OPV cells has been considerably improved, the research on device stability is limited. Herein, a cross-linkable material, cross-linked [6,6]-phenyl-C61-butyric styryl dendron ester (c-PCBSD), is applied as an interfacial modification layer on the surface of zinc oxide and as the third component into the PBDB-TF:Y6-based OPV cells to enhance photovoltaic performance and long-term stability. The PCE of the OPV cells that underwent the two-step modification increased from 15.1 to 16.1%. In particular, such OPV cells exhibited much better stability under both thermal and air conditions because of the decreased number of interfacial defects and stable interfacial and active layer morphologies. The results demonstrated that the introduction of a cross-linkable fullerene derivative into the interfacial and active layers is a feasible method to improve the PCE and stability of OPV cells.
RESUMEN
The meta-stable active layer morphology of organic solar cells (OSCs) is identified as the main cause of the rapid burn-in loss of power conversion efficiency (PCE) during long-term device operation. However, effective strategies to eliminate the associated loss mechanisms from the initial stage of device operation are still lacking, especially for high-efficiency material systems. Herein, the introduction of molecularly engineered dimer acceptors with adjustable thermal transition properties into the active layer of OSCs to serve as supramolecular stabilizers for regulating the thermal transitions and optimizing the crystallization of the absorber composites is reported. By establishing intimate π-π interactions with small-molecule acceptors, these stabilizers can effectively reduce the trap-state density (Nt) in the devices to achieve excellent PCEs over 19%. More importantly, the low Nt associated with an initially optimized morphology can be maintained under external stresses to significantly reduce the PCE burn-in loss in devices. This research reveals a judicious approach to improving OPV stability by establishing a comprehensive correlation between material properties, active-layer morphology, and device performance, for developing burn-in-free OSCs.
RESUMEN
All-polymer solar cells (All-PSCs) are considered the most promising candidate in achieving both efficient and stable organic photovoltaic devices, yet the field has rarely presented an in-depth understanding of corresponding device stability while efficiency is continuously boosted via the innovation of polymer acceptors. Herein, a ternary matrix is built for all-PSCs with optimized morphology, improved film ductility and importantly, boosted efficiency and better operational stability than its parental binary counterparts, as a platform to study the underlying mechanism. The target system PQM-Cl:PTQ10:PY-IT (0.8:0.2:1.2) exhibits an alleviated burn-in loss of morphology and efficiency under light soaking, which supports its promoted device lifetime. The comprehensive characterizations of fresh and light-soaked active layers lead to a clear illustration of opposite morphological and physical degradation direction of PQM-Cl and PTQ10, thus resulting in a delicate balance at the optimal ternary system. Specifically, the enlarging tendency of PQM-Cl and shrinking preference of PTQ10 in terms of phase separation leads to a stable morphology in their mixing phase; the hole transfer kinetics of PQM-Cl:PY-IT host is stabilized by incorporating PTQ10. This work succeeds in reaching a deep insight into all-PSC's stability promotion by a rational ternary design, which booms the prospect of gaining high-performance all-PSCs.
RESUMEN
Stable and robust open-circuit voltage (VOC) is essential to achieve a long lifetime for polymer solar cells (PSCs). Here, we investigate the VOC burn-in loss mechanism on the basis of the analysis of electroluminescence quantum efficiency (EQEEL) and impedance measurements in amorphous PSCs, with an inverted structure having different electron transport layers (ETLs) of ZnO nanoparticles (NPs) and the sol-gel processed ZnO layer. We found that both charge recombination and energetic disorder account for a substantial proportion of the VOC burn-in loss. Moreover, varying the ETL significantly affected the degree of VOC burn-in loss, although relative contribution of these two factors remained constant. To accurately extract charge recombination-induced VOC loss, we applied a novel yet effective method that relates the EQEEL of PSCs to charge recombination-induced VOC loss. Additional analyses, including those focused on light intensity (Plight)-dependent VOC and density of states, will provide an inclusive perspective on the degradation mechanism of VOC and development of stable PSCs.