Light and elevated temperature induced degradation and recovery of gallium-doped Czochralski-silicon solar cells.

The fast-firing step commonly applied at the end of solar cell production lines is known to trigger light-induced degradation effects on solar cells made on different silicon materials. In this study, we examine degradation phenomena on high-efficiency solar cells with poly-Si passivating contacts made on Ga-doped Czochralski-grown silicon (Cz-Si) base material under one-sun illumination at elevated temperatures ranging from 80 to 160 °C. The extent of degradation is demonstrated to increase with the applied temperature up to 140 °C. Above 140 °C, the degradation extent decreases with increasing temperature. The degradation of the energy conversion efficiency can be ascribed foremost to a reduction of the short-circuit current and the fill factor and to a lesser extent to a reduction of the open-circuit voltage. The extent of degradation at 140 °C amounts to 0.4%abs of the initial conversion efficiency of 22.1% compared to 0.15%abs at 80 °C. The extent of the efficiency degradation in the examined solar cells is significantly lower (by a factor of ~ 5) compared to solar cells made on B-doped Cz-Si wafers. Importantly, through prolonged illumination at elevated temperatures (e.g. 5 h, 1 sun, 140 °C), an improvement of the conversion efficiency by up to 0.2%abs compared to the initial value is achievable in combination with a permanent regeneration resulting in long-term stable conversion efficiencies above 22%.

Simulation-based roadmap for the integration of poly-silicon on oxide contacts into screen-printed crystalline silicon solar cells.

We present a simulation-based study for identifying promising cell structures, which integrate poly-Si on oxide junctions into industrial crystalline silicon solar cells. The simulations use best-case measured input parameters to determine efficiency potentials. We also discuss the main challenges of industrially processing these structures. We find that structures based on p-type wafers in which the phosphorus diffusion is replaced by an n-type poly-Si on oxide junction (POLO) in combination with the conventional screen-printed and fired Al contacts show a high efficiency potential. The efficiency gains in comparsion to the 23.7% efficiency simulated for the PERC reference case are 1.0% for the POLO BJ (back junction) structure and 1.8% for the POLO IBC (interdigitated back contact) structure. The POLO BJ and the POLO IBC cells can be processed with lean process flows, which are built on major steps of the PERC process such as the screen-printed Al contacts and the [Formula: see text] passivation. Cell concepts with contacts using poly-Si for both polarities ([Formula: see text]-concepts) show an even higher efficiency gain potential of 1.3% for a [Formula: see text] BJ cell and 2.2% for a [Formula: see text] IBC cell in comparison to PERC. For these structures further research on poly-Si structuring and screen-printing on p-type poly-Si is necessary.

Instrumentation-related uncertainty of reflectance and transmittance measurements with a two-channel spectrophotometer.

Spectrophotometers are operated in numerous fields of science and industry for a variety of applications. In order to provide confidence for the measured data, analyzing the associated uncertainty is valuable. However, the uncertainty of the measurement results is often unknown or reduced to sample-related contributions. In this paper, we describe our approach for the systematic determination of the measurement uncertainty of the commercially available two-channel spectrophotometer Agilent Cary 5000 in accordance with the Guide to the expression of uncertainty in measurements. We focus on the instrumentation-related uncertainty contributions rather than the specific application and thus outline a general procedure which can be adapted for other instruments. Moreover, we discover a systematic signal deviation due to the inertia of the measurement amplifier and develop and apply a correction procedure. Thereby we increase the usable dynamic range of the instrument by more than one order of magnitude. We present methods for the quantification of the uncertainty contributions and combine them into an uncertainty budget for the device.

Experimental setup for camera-based measurements of electrically and optically stimulated luminescence of silicon solar cells and wafers.

We report in detail on the luminescence imaging setup developed within the last years in our laboratory. In this setup, the luminescence emission of silicon solar cells or silicon wafers is analyzed quantitatively. Charge carriers are excited electrically (electroluminescence) using a power supply for carrier injection or optically (photoluminescence) using a laser as illumination source. The luminescence emission arising from the radiative recombination of the stimulated charge carriers is measured spatially resolved using a camera. We give details of the various components including cameras, optical filters for electro- and photo-luminescence, the semiconductor laser and the four-quadrant power supply. We compare a silicon charged-coupled device (CCD) camera with a back-illuminated silicon CCD camera comprising an electron multiplier gain and a complementary metal oxide semiconductor indium gallium arsenide camera. For the detection of the luminescence emission of silicon we analyze the dominant noise sources along with the signal-to-noise ratio of all three cameras at different operation conditions.

Layer Transfer from Chemically Etched 150 mm Porous Si Substrates.

We demonstrate for the first time the successful layer transfer of an epitaxially grown monocrystalline Si film from a purely chemically etched porous Si substrate of 150 mm diameter to a glass carrier. The surface conditioning for all Si layer transfer processes based on porous Si has been, up to now without exception, carried out by electrochemical etching. In contrast, our chemical stain etching process uses an aqueous HF-rich HF/HNO3 solution. The porosity increases with increasing doping concentration of the Si substrate wafer and with increasing porous layer thickness. In contrast to the electrochemically etched double layers, the porosity profile of the stain etched substrates is highest at the original wafer surface and lowest at the interface between the porous layer and the Si bulk. The epitaxy process is adapted to the high porosity at the surface with regard to the reorganization of the porous layer.