RESUMO
Perovskite solar cells (PSCs) comprise a solid perovskite absorber sandwiched between several layers of different charge-selective materials, ensuring unidirectional current flow and high voltage output of the devices1,2. A 'buffer material' between the electron-selective layer and the metal electrode in p-type/intrinsic/n-type (p-i-n) PSCs (also known as inverted PSCs) enables electrons to flow from the electron-selective layer to the electrode3-5. Furthermore, it acts as a barrier inhibiting the inter-diffusion of harmful species into or degradation products out of the perovskite absorber6-8. Thus far, evaporable organic molecules9,10 and atomic-layer-deposited metal oxides11,12 have been successful, but each has specific imperfections. Here we report a chemically stable and multifunctional buffer material, ytterbium oxide (YbOx), for p-i-n PSCs by scalable thermal evaporation deposition. We used this YbOx buffer in the p-i-n PSCs with a narrow-bandgap perovskite absorber, yielding a certified power conversion efficiency of more than 25%. We also demonstrate the broad applicability of YbOx in enabling highly efficient PSCs from various types of perovskite absorber layer, delivering state-of-the-art efficiencies of 20.1% for the wide-bandgap perovskite absorber and 22.1% for the mid-bandgap perovskite absorber, respectively. Moreover, when subjected to ISOS-L-3 accelerated ageing, encapsulated devices with YbOx exhibit markedly enhanced device stability.
RESUMO
Obtaining micron-thick perovskite films of high quality is key to realizing efficient and stable positive (p)-intrinsic (i)-negative (n) perovskite solar cells1,2, but it remains a critical challenge. Here, we report an effective method for producing high-quality, micron-thick formamidinium-based perovskite films by forming coherent grain boundaries, where high-Miller-index-oriented grains grow on the low-Miller-index-oriented grains in a stabilized atmosphere. The resulting micron-thick perovskite films, with enhanced grain boundaries and grains, showed stable material properties and outstanding optoelectronic performances. The small-area solar cells achieved efficiencies of 26.1%. The 1-square-centimeter devices and 5 cm × 5 cm minimodules delivered efficiencies of 24.3% and 21.4%, respectively. The devices processed in a stabilized atmosphere presented a high reproducibility across all four seasons. The encapsulated devices exhibited superior long-term stability under both light and thermal stressors in ambient air.
RESUMO
Recently, there has been an extensive focus on inverted perovskite solar cells (PSCs) with a p-i-n architecture due to their attractive advantages, such as exceptional stability, high efficiency, low cost, low-temperature processing, and compatibility with tandem architectures, leading to a surge in their development. Single-junction and perovskite-silicon tandem solar cells (TSCs) with an inverted architecture have achieved certified PCEs of 26.15% and 33.9% respectively, showing great promise for commercial applications. To expedite real-world applications, it is crucial to investigate the key challenges for further performance enhancement. We first introduce representative methods, such as composition engineering, additive engineering, solvent engineering, processing engineering, innovation of charge transporting layers, and interface engineering, for fabricating high-efficiency and stable inverted PSCs. We then delve into the reasons behind the excellent stability of inverted PSCs. Subsequently, we review recent advances in TSCs with inverted PSCs, including perovskite-Si TSCs, all-perovskite TSCs, and perovskite-organic TSCs. To achieve final commercial deployment, we present efforts related to scaling up, harvesting indoor light, economic assessment, and reducing environmental impacts. Lastly, we discuss the potential and challenges of inverted PSCs in the future.
RESUMO
Controlling topological phases of light allows the observation of abundant topological phenomena and the development of robust photonic devices. The prospect of more sophisticated control with topological photonic devices for practical implementations requires high-level programmability. Here we demonstrate a fully programmable topological photonic chip with large-scale integration of silicon photonic nanocircuits and microresonators. Photonic artificial atoms and their interactions in our compound system can be individually addressed and controlled, allowing the arbitrary adjustment of structural parameters and geometrical configurations for the observation of dynamic topological phase transitions and diverse photonic topological insulators. Individual programming of artificial atoms on the generic chip enables the comprehensive statistical characterization of topological robustness against relatively weak disorders, and counterintuitive topological Anderson phase transitions induced by strong disorders. This generic topological photonic chip can be rapidly reprogrammed to implement multifunctionalities, providing a flexible and versatile platform for applications across fundamental science and topological technologies.
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Label-free sensors are highly desirable for biological analysis and early-stage disease diagnosis. Optical evanescent sensors have shown extraordinary ability in label-free detection, but their potentials have not been fully exploited because of the weak evanescent field tails at the sensing surfaces. Here, we report an ultrasensitive optofluidic biosensor with interface whispering gallery modes in a microbubble cavity. The interface modes feature both the peak of electromagnetic-field intensity at the sensing surface and high-Q factors even in a small-sized cavity, enabling a detection limit as low as 0.3 pg/cm2 The sample consumption can be pushed down to 10 pL due to the intrinsically integrated microfluidic channel. Furthermore, detection of single DNA with 8 kDa molecular weight is realized by the plasmonic-enhanced interface mode.
Assuntos
Técnicas Biossensoriais/métodos , Microfluídica/métodos , Nanotecnologia/métodosRESUMO
High emission rate, high collection efficiency, and immunity to defects are the requirements of implementing on-chip single photon sources. Here, we theoretically demonstrate that both cascade enhancement and high collection efficiency of emitted photons from a single emitter can be achieved simultaneously in a topological photonic crystal containing a resonant dielectric nanodisk. The nanodisk excited by a magnetic emitter can be regarded as a large equivalent magnetic dipole. The near-field overlapping between this equivalent magnetic dipole and edge state enables achieving a cascade enhancement of single-photon emission with a Purcell factor exceeding 4 × 103. These emitted photons are guided into edge states with a collection efficiency of more than 90%, which is also corresponding to quantum yield due to topological antiscattering and the absence of absorption. The proposed mechanism under topological protection has potential applications in on-chip light-matter interactions, quantum light sources, and nanolasers.
RESUMO
Surface ligand chemistry is vital to control the synthesis, diminish surface defects, and improve the electronic coupling of quantum dots (QDs) toward emerging applications in optoelectronic devices. Here, we successfully develop highly homogeneous and dispersed AgBiS2 QDs, focus on the control of interdot spacing, and substitute the long-chain ligands with ammonium iodide in solution. This results in improved electronic coupling of AgBiS2 QDs with excellent surface passivation, which greatly facilitates carrier transport within the QD films. Based on the stable AgBiS2 QD dispersion with the optimal ligand state, a homogeneous and densely packed QD film is prepared by a facile one-step coating process, delivering a champion power conversion efficiency of approximately 8% in the QD solar cells with outstanding shelf life stability. The proposed surface engineering strategy holds the potential to become a universal preprocessing step in the realm of high-performance QD optoelectronic devices.
RESUMO
Plasmon-induced hot-electron transfer at the metallic nanoparticle/semiconductor interface is the basis of plasmon-enhanced photocatalysis and energy harvesting. However, limited by the nanoscale size of hot spots and femtosecond time scale of hot-electron transfer, direct observation is still challenging. Herein, by using spatiotemporal-resolved photoemission electron microscopy with a two-color pump-probe beamline, we directly observed such a process with a concise system, the Au nanoparticle/monolayer transition-metal dichalcogenide (TMD) interface. The ultrafast hot-electron transfer from Au nanoparticles to monolayer TMDs and the plasmon-enhanced transfer process were directly measured and verified through an in situ comparison with the Au film/TMD interface and free TMDs. The lifetime at the Au nanoparticle/MoSe2 interface decreased from 410 to 42 fs, while the photoemission intensities exhibited a 27-fold increase compared to free MoSe2. We also measured the evolution of hot electrons in the energy distributions, indicating the hot-electron injection and decay happened in an ultrafast time scale of â¼50 fs without observable electron cooling.
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Quantum-limited timing jitter of soliton microcombs has long been recognized as their fundamental noise limit. Here, we surpass such limit by utilizing dispersive wave dynamics in multimode microresonators. Through the viscous force provided by these dispersive waves, the quantum-limited timing jitter can be suppressed to a much lower level that forms the ultimate fundamental noise limit of soliton microcombs. Our findings enable coherence engineering of soliton microcombs in the quantum regime, providing critical guidelines for using soliton microcombs to synthesize ultralow-noise microwave and optical signals.
RESUMO
Orbital angular momentum (OAM) provides an additional degree of freedom for optical communication systems, and manipulating on-chip OAM is important in integrated photonics. However, there is no effective method to realize OAM topological charge conversion on chip. In this Letter, we propose a way to convert OAM by encircling two groups of exceptional points in different Riemann sheets. In our framework, any OAM conversion can be achieved on demand just by manipulating adiabatic and nonadiabatic evolution of modes in two on-chip waveguides. More importantly, the chiral OAM conversion is realized, which is of great significance since the path direction can determine the final topological charge order. Our Letter presents a special chiral behavior and provides a new method to manipulate OAM on the chip.
RESUMO
High power femtosecond laser pulses launched in air undergo nonlinear filamentary propagation, featuring a bright and thin plasma channel in air with its length much longer than the Rayleigh length of the laser beam. During this nonlinear propagation process, the laser pulses experience rich and complex spatial and temporal transformations. With its applications ranging from supercontinuum generation, laser pulse compression, remote sensing to triggering of lightning, the underlying physical mechanism of filamentation has been intensively studied. In this review, we will focus on the fluorescence and cavity-free lasing effect of the plasma filaments in air. The different mechanisms underlying the fluorescence of the excited neutral nitrogen molecules will be throughly examined and it is concluded that the electron collision excitation is the dominant channel for the formation of the excited nitrogen molecules. The recently discovered "air lasing" effect, a cavity-free bidirectional lasing emission emitted by the filaments, will be introduced and its main properties will be emphasized. The applications of the fluorescence and lasing effect of the neutral nitrogen molecules will be introduced, with two examples on spectroscopy and detection of electric field. Finally, we discuss the quenching effect of the lasing effect in atmosphere and the mechanisms responsible will be analyzed. An outlook for the achievement of backward lasing in air will be briefly presented.
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Microlasers in near-degenerate supermodes lay the cornerstone for studies of non-Hermitian physics, novel light sources, and advanced sensors. Recent experiments of the stimulated scattering in supermode microcavities reported beating phenomena, interpreted as dual-mode lasing, which, however, contradicts their single-mode nature due to the clamped pump field. Here, we investigate the supermode Raman laser in a whispering-gallery microcavity and demonstrate experimentally its single-mode lasing behavior with a side-mode suppression ratio (SMSR) up to 37 dB, despite the emergence of near-degenerate supermodes by the backscattering between counterpropagating waves. Moreover, the beating signal is recognized as the transient interference during the switching process between the two supermode lasers. Self-injection is exploited to manipulate the lasing supermodes, where the SMSR is further improved by 15 dB and the laser linewidth is below 100 Hz.
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Understanding ultrafast electronic dynamics of the interlayer excitonic states in atomically thin transition metal dichalcogenides is of importance in engineering valleytronics and developing excitonic integrated circuits. In this work, we experimentally explored the ultrafast dynamics of indirect interlayer excitonic states in monolayer type II WSe2/ReS2 heterojunctions using time-resolved photoemission electron microscopy, which reveals its anisotropic behavior. The ultrafast cooling and decay of excited-state electrons exhibit significant linear dichroism. The ab initio theoretical calculations provide unambiguous evidence that this linear dichroism result is primarily associated with the anisotropic nonradiative recombination of indirect interlayer excitonic states. Measuring time-resolved photoemission energy spectra, we have further revealed the ultrafast evolution of excited-state electrons in anisotropic indirect interlayer excitonic states. The findings have important implications for controlling the interlayer moiré excitonic effects and designing anisotropic optoelectronic devices.
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We experimentally study photoemission from gold nanodisk arrays using space-, time-, and energy-resolved photoemission electron microscopy. When excited by a plasmonic resonant infrared (IR) laser pulse, plasmonic hotspots are generated owing to local surface plasmon resonance. Photoelectrons emitted from each plasmonic hotspot form a nanoscale and ultrashort electron pulse. When the system is excited by an extreme ultraviolet (EUV) laser pulse, a uniformly distributed photoelectron cloud is formed across the sample surface. When excited by the IR and EUV laser pulses together, both the photoemission image and kinetic energy vary significantly for the IR laser-generated electrons depending on the time delay between the two laser pulses. These observations are well explained by the Coulomb interaction with the EUV laser-generated electron cloud. Our study offers a feasible approach to manipulate the energy of electron pulse emitted from a plasmonic nanostructure on an ultrafast time scale.
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Exploring ultrafast carrier dynamics is crucial for the materials' fundamental properties and device design. In this work, we employ time- and energy-resolved photoemission electron microscopy with tunable pump wavelengths from visible to near-infrared to reveal the ultrafast carrier dynamics of the elemental semiconductor tellurium. We find that two discrete sub-bands around the Γ point of the conduction band are involved in excited-state electron ultrafast relaxation and reveal that hot electrons first go through ultrafast intra sub-band cooling on a time scale of about 0.3 ps and then transfer from the higher sub-band to the lower one on a time scale of approximately 1 ps. Additionally, theoretical calculations reveal that the lower one has flat-band characteristics, possessing a large density of states and a long electron lifetime. Our work demonstrates that TR- and ER-PEEM with broad tunable pump wavelengths are powerful techniques in revealing the details of ultrafast carrier dynamics in time and energy domains.
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As the initial synthesized colloidal quantum dots (CQDs) are generally capped with insulating ligands, ligand exchange strategies are essential in the fabrication of CQD films for solar cells, which can regulate the surface chemical states of CQDs to make them more suitable for thin-film optoelectronic devices. However, uncontrollable surface adsorption of water molecules during the ligand exchange process introduces new defect sites, thereby impairing the resultant device performance, which attracts more efforts devoted to it but remains a puzzle. Here, we develop a solvent-engineering-assisted ligand exchange strategy to revamp the surface adsorption, improve the exchange efficiency, and modulate the surface chemistry for the environmentally friendly lead-free silver bismuth disulfide (AgBiS2) CQDs. The optimized AgBiS2 CQD solar cells deliver an outstanding champion power conversion efficiency (PCE) of up to 8.95 % and improved long-term stability. Our strategy is less environment-dependent and can produce solar cells with negligible performance variance for several batches across several months. Our work demonstrates the critical role of solvents for ligand exchange in the surface chemistry of CQDs and the realization of high-performance photovoltaic devices in a highly reproducible manner.
RESUMO
Nitrogen ions pumped by intense femtosecond laser pulses give rise to optical amplification in the ultraviolet range. Here, we demonstrated that a seed light pulse carrying orbital angular momentum (OAM) can be significantly amplified in nitrogen plasma excited by a Gaussian femtosecond laser pulse. With the topological charge of â = ±1, we observed an energy amplification of the seed light pulse by two orders of magnitude, while the amplified pulse carries the same OAM as the incident seed pulse. Moreover, we show that a spatial misalignment of the plasma amplifier with the OAM seed beam leads to an amplified emission of Gaussian mode without OAM, due to the special spatial profile of the OAM seed pulse that presents a donut-shaped intensity distribution. Utilizing this misalignment, we can implement an optical switch that toggles the output signal between Gaussian mode and OAM mode. This work not only certifies the phase transfer from the seed light to the amplified signal, but also highlights the important role of spatial overlap of the donut-shaped seed beam with the gain region of the nitrogen plasma for the achievement of OAM beam amplification.
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We experimentally and theoretically study high-order harmonic generation in zinc oxide crystals irradiated by mid-infrared lasers. The trajectories are mapped to the far field spatial distribution of harmonics. The divergence angles of on-axis and off-axis parts exhibit different dependences on the order of the harmonics. This observation can be theoretically reproduced by the coherent interference between the short and long trajectories with dephasing time longer than 0.5 optical cycle. Further, the relative contribution of the short and long trajectories is demonstrated to be accurately controlled by a one-color or two-color laser on the attosecond time scale. This work provides a reliable method to determine the electron dephasing time and demonstrates a versatile control of trajectory interference in the solid high-order harmonic generation.
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We report the slow-light enhanced spin-resolved in-plane emission from a single quantum dot (QD) in a photonic crystal waveguide (PCW). The slow light dispersions in PCWs are designed to match the emission wavelengths of single QDs. The resonance between two spin states emitted from a single QD and a slow light mode of a waveguide is investigated under a magnetic field with Faraday configuration. Two spin states of a single QD experience different degrees of enhancement as their emission wavelengths are shifted by combining diamagnetic and Zeeman effects with an optical excitation power control. A circular polarization degree up to 0.81 is achieved by changing the off-resonant excitation power. Strongly polarized photon emission enhanced by a slow light mode shows great potential to attain controllable spin-resolved photon sources for integrated optical quantum networks on chip.
RESUMO
Parity-time (PT)-symmetry brings various opportunities for electromagnetic field manipulation and light-matter interaction, such as modification of spontaneous emission. However, previous works mainly focused on the behavior of spontaneous emission at exceptional points or in the PT-symmetry situation. Here, we theoretically demonstrate loss-induced Purcell enhancement in PT-broken whispering gallery microcavities. In the PT-broken phase, one of the supermodes decays slowly thereby playing a leading role in spontaneous emission. As the loss increases, the quality factor of this supermode is higher and the mode volume is smaller, so that the Purcell factors will be larger if the emitter is placed near the lossless cavity. Our findings indicate that loss can enhance the interaction between light and matter, which could be applied to single photon emission, non-Hermitian photonic devices, etc.