Defect-Selective Charge-Density-Wave Condensation in 2H-NbSe_{2}.

Defects have been known to substantially affect quantum states of materials including charge density wave (CDW). However, the microscopic mechanism of the influence of defects is often elusive due partly to the lack of atomic scale characterization of defects themselves. We investigate native defects of a prototypical CDW material 2H-NbSe_{2} and their microscopic interaction with CDW. Three prevailing types of atomic scale defects are classified by scanning tunneling microscope, and their atomic structures are identified by density functional theory calculations as Se vacancies and Nb intercalants. Above the transition temperature, two distinct CDW structures are found to be induced selectively by different types of defects. This intriguing phenomenon is explained by competing CDW ground states and local lattice strain fields induced by defects, providing a clear microscopic mechanism of the defect-CDW interaction.

Topological Landscape of Competing Charge Density Waves in 2H-NbSe_{2}.

Despite decades of studies of the charge density wave (CDW) of 2H-NbSe_{2}, the origin of its incommensurate CDW ground state has not been understood. We discover that the CDW of 2H-NbSe_{2} is composed of two different, energetically competing, structures. The lateral heterostructures of two CDWs are entangled as topological excitations, which give rise to a CDW phase shift and the incommensuration without a conventional domain wall. A partially melted network of topological excitations and their vertices explain an unusual landscape of domains. The unconventional topological role of competing phases disclosed here can be widely applied to various incommensuration or phase coexistence phenomena in materials.

Correlated electronic states at domain walls of a Mott-charge-density-wave insulator 1T-TaS2.

Domain walls in interacting electronic systems can have distinct localized states, which often govern physical properties and may lead to unprecedented functionalities and novel devices. However, electronic states within domain walls themselves have not been clearly identified and understood for strongly correlated electron systems. Here, we resolve the electronic states localized on domain walls in a Mott-charge-density-wave insulator 1T-TaS2 using scanning tunneling spectroscopy. We establish that the domain wall state decomposes into two nonconducting states located at the center of domain walls and edges of domains. Theoretical calculations reveal their atomistic origin as the local reconstruction of domain walls under the strong influence of electron correlation. Our results introduce a concept for the domain wall electronic property, the walls own internal degrees of freedom, which is potentially related to the controllability of domain wall electronic properties.The electronic states within domain walls in an interacting electronic system remain elusive. Here, Cho et al. report that the domain wall state in a charge-density-wave insulator 1T-TaS2 decomposes into two localized but nonconducting states at the center or edges of domain walls.

Moiré Superstructure and Dimensional Crossover of 2D Electronic States on Nanoscale Lead Quantum Films.

We investigate using scanning tunneling microscopy and spectroscopy electronic aspects of Moiré superstructures in nanoscale Pb quantum films grown on IrTe2, which is a unique layered material with charge-order transitions into stripe phases. Pb ultrathin films exhibit a Moiré superstructure due to the lattice mismatch of Pb and IrTe2, which produces strong lateral electronic modulation of hexagonal symmetry and discreet subbands. Moreover, strongly anisotropic or 1D electronic states are formed in Pb films as modulated by the stripe charge order. Present results indicate the controllability of lateral electronic structures of various ultrathin films by extra interfacial potentials due not only to Moiré superstructures but also to novel electronic orderings of substrates.