Polarization loss in the organic ferroelectric trialkylbenzene-1,3,5-tricarboxamide (BTA).

We investigate the polarization loss in the archetypical molecular organic ferroelectric trialkylbenzene-1,3,5-tricarboxamide (BTA). We prove that the polarization loss is due to thermally activated R-relaxation, which is a collective reversal of the amide dipole moments in ferroelectric domains. By applying a weak electrostatic field both the polarization loss and the R-relaxation are suppressed, leading to an enhancement of the retention time by at least several orders of magnitude. Alternative loss mechanisms are discussed and ruled out. By operating the thin-film devices slightly above the crystalline to liquid crystalline phase transition temperature the retention time of one compound becomes more than 12 hours even in absence of supportive bias, which is among the longest reported so far for organic ferroelectric materials.

True ferroelectric switching in thin films of trialkylbenzene-1,3,5-tricarboxamide (BTA).

We have investigated the ferroelectric polarization switching properties of trialkylbenzene-1,3,5-tricarboxamide (BTA), which is a model system for a large class of novel organic ferroelectric materials. In the solid state BTAs form a liquid crystalline columnar hexagonal phase that provides long range order that was previously shown to give rise to hysteretic dipolar switching. In this work the nature of the polar switching process is investigated by a combination of dielectric relaxation spectroscopy, depth-resolved pyroelectric response measurements, and classical frequency- and time-dependent electrical switching. We show that BTAs, when brought in a homeotropically aligned hexagonal liquid crystalline phase, are truly ferroelectric. Analysis of the transient switching behavior suggests that the ferroelectric switching is limited by a highly dispersive nucleation process, giving rise to a wide distribution of switching times.

Unusual thermoelectric behavior indicating a hopping to bandlike transport transition in pentacene.

An unusual increase in the Seebeck coefficient with increasing charge carrier density is observed in pentacene thin film transistors. This behavior is interpreted as being due to a transition from hopping transport in static localized states to bandlike transport, occurring at temperatures below ∼250 K. Such a transition can be expected for organic materials in which both static energetic disorder and dynamic positional disorder are important. While clearly visible in the temperature and density dependent Seebeck coefficient, the transition hardly shows up in the charge carrier mobility.

Morphological device model for organic bulk heterojunction solar cells.

We present a numerical model for calculating current-voltage characteristics of polymer:fullerene bulk hetrojunction solar cells at different degrees of nanoscale phase separation. We show that the short-circuit current enhancement with finer phase separation is due to a reduction in bimolecular recombination caused by lateral movement of photogenerated electrons to the fullerene-rich phase. At high bias, vertical electron transport is enhanced and lateral movement is reduced, causing a significant field-dependent carrier extraction for coarse morphologies.

The Role of Delocalization and Excess Energy in the Quantum Efficiency of Organic Solar Cells and the Validity of Optical Reciprocity Relations.

The photon energy dependence of long-range charge separation is studied for two prototypical polymer:fullerene systems. The internal quantum efficiency (IQE) of PCDTBT:PC61BM is experimentally shown to be independent of the excitation energy. In contrast, for TQ1:PC71BM the IQE is strongly energy-dependent for excitation energies close to charge transfer (CT) electroluminescence peak maximum while it becomes energy-independent at higher excitation energies. Kinetic Monte Carlo simulations reproduce the experimental IQE and reveal that the photon energy-dependence of the IQE is governed by charge delocalization. Efficient long-range separation at excitation energies corresponding to the CT electroluminescence peak maximum or lower requires an initial separation of the hole-electron pair by ∼4-5 nm, whereas delocalization is less important for charge separation at higher photon energies. Our modeling results suggest that a phenomenological reciprocity between CT electroluminescence and external quantum efficiency does not necessarily prove that commonly employed reciprocity relations between these spectra are valid from a fundamental perspective.

The optimal structure-conductivity relation in epoxy-phthalocyanine nanocomposites.

Phthalcon-11 (aquocyanophthalocyaninatocobalt (III)) forms semiconducting nanocrystals that can be dispersed in epoxy coatings to obtain a semiconducting material with a low percolation threshold. We investigated the structure-conductivity relation in this composite and the deviation from its optimal realization by combining two techniques. The real parts of the electrical conductivity of a Phthalcon-11/epoxy coating and of Phthalcon-11 powder were measured by dielectric spectroscopy as a function of frequency and temperature. Conducting atomic force microscopy (C-AFM) was applied to quantify the conductivity through the coating locally along the surface. This combination gives an excellent tool to visualize the particle network. We found that a large fraction of the crystals is organized in conducting channels of fractal building blocks. In this picture, a low percolation threshold automatically leads to a conductivity that is much lower than that of the filler. Since the structure-conductivity relation for the found network is almost optimal, a drastic increase in the conductivity of the coating cannot be achieved by changing the particle network, but only by using a filler with a higher conductivity level.

Tuning organic magnetoresistance in polymer-fullerene blends by controlling spin reaction pathways.

Harnessing the spin degree of freedom in semiconductors is generally a challenging, yet rewarding task. In recent years, the large effect of a small magnetic field on the current in organic semiconductors has puzzled the young field of organic spintronics. Although the microscopic interaction mechanisms between spin-carrying particles in organic materials are well understood nowadays, there is no consensus as to which pairs of spin-carrying particles are actually influencing the current in such a drastic manner. Here we demonstrate that the spin-based particle reactions can be tuned in a blend of organic materials, and microscopic mechanisms are identified using magnetoresistance lineshapes and voltage dependencies as fingerprints. We find that different mechanisms can dominate, depending on the exact materials choice, morphology and operating conditions. Our improved understanding will contribute to the future control of magnetic field effects in organic semiconductors.

Sign inversion of magnetoresistance in space-charge limited organic devices.

In this Letter, we explain the puzzling sign change of organic magnetoresistance in space-charge limited devices by device physics. We prove analytically and numerically that in the case of bipolar conduction with an Ohmic majority carrier and an injection limited minority carrier contact, a decrease in minority carrier mobility may give rise to an increase in the device current. It is shown that when the magnetic field acts to decrease the mobility of both carriers, a sign change in the magnetoconductivity as a function of applied bias may result. This behavior is in agreement with experimental observations.

Separating positive and negative magnetoresistance in organic semiconductor devices.

We study the transition between positive and negative organic magnetoresistance (OMAR) in tris-(8 hydroxyquinoline) aluminium (Alq_{3}), in order to identify the elementary mechanisms governing this phenomenon. We show how the sign of OMAR changes as function of the applied voltage and temperature. The transition from negative to positive magnetoresistance (MR) is found to be accompanied by an increase in slope of log(I) versus log(V). ac admittance measurements show this transition coincides with the onset of minority charge (hole) injection in the device. All these observations are consistent with two simultaneous contributions with opposite sign of MR, which may be assigned to holes and electrons having different magnetic field responses.

Optical detection of ballistic electrons injected by a scanning-tunneling microscope.

We demonstrate a spectroscopic technique which is based on ballistic injection of minority carriers from the tip of a scanning-tunneling microscope into a semiconductor heterostructure. By analyzing the resulting electroluminescence spectrum as a function of tip-sample bias, both the injection barrier height and the carrier scattering rate in the semiconductor can be determined. This technique is complementary to ballistic electron emission spectroscopy since minority instead of majority carriers are injected, which give the opportunity to study the carrier trajectory after injection.

Real-space measurement of the potential distribution inside organic semiconductors.

We demonstrate that the soft nature of organic semiconductors can be exploited to directly measure the potential distribution inside such an organic layer by scanning-tunneling microscope (STM) based spectroscopy. Keeping the STM feedback system active while reducing the tip-sample bias forces the tip to penetrate the organic layer. From an analysis of the injection and bulk transport processes it follows that the tip height versus bias trace obtained in this way directly reflects the potential distribution in the organic layer.