Growth and sintering of fullerene nanotubes.

Carbon nanotubes produced in arcs have been found to have the form of multiwalled fullerenes, at least over short lengths. Sintering of the tubes to each other is the predominant source of defects that limit the utility of these otherwise perfect fullerene structures. The use of a water-cooled copper cathode minimized such defects, permitting nanotubes longer than 40 micrometers to be attached to macroscopic electrodes and extracted from the bulk deposit. A detailed mechanism that features the high electric field at (and field-emission from) open nanotube tips exposed to the arc plasma, and consequent positive feedback effects from the neutral gas and plasma, is proposed for tube growth in such arcs.

Synthesis of Au-MoS(2) nanocomposites: thermal and friction-induced changes to the structure.

The synthesis of Au-MoS2 nanocomposite thin films and the evolution of their structures during film growth, in situ transmission electron microscopy (TEM) heating, and sliding contact were investigated. TEM revealed that the films deposited at ambient (room) temperature (RT) consisted of 2-4 nm size Au particles in a matrix of MoS2. With increasing growth temperatures, the nanocomposite film exhibited structural changes: the Au nanoparticles coarsened by diffusion-driven Ostwald ripening to 5-10 nm size and the MoS2 basal planes encapsulated the Au nanoparticles thereby forming a solid Au-core MoS2 structure. However, when the RT deposited film was heated inside the TEM, the highly ordered MoS2 basal planes did not encapsulate the Au, suggesting that MoS2 surface diffusivity during film growth is different than MoS2 bulk diffusion. Increases in MoS2 crystallinity and coarsening of Au nanoparticles (up to 10 nm at 600 °C) were observed during in situ TEM heating of the RT deposited film. Sliding contact during friction and wear tests resulted in a pressure-induced reorientation of MoS2 basal planes parallel to the sliding direction. The subsurface coarsened Au nanoparticles also provide an underlying load support allowing shear of surface MoS2 basal planes.

Controlled fabrication of nanopores using a direct focused ion beam approach with back face particle detection.

We report a direct, ion drilling technique that enables the reproducible fabrication and placement of nanopores in membranes of different thickness. Using a 30 keV focused Ga ion beam column combined with an in situ, back face, multi-channelplate particle detector, nanopores are sputtered in Si(3)N(4) and W/Si(3)N(4) to have diameters as small as 12 nm. Transmission electron microscopy shows that focused ion beam-drilled holes are near-conical with the diameter decreasing from entry to exit side. By monitoring the detector signal during ion exposure, the drilled hole width can be minimized such that the exit-side diameter is smaller than the full width at half-maximum of the nominally Gaussian-shaped incident beam. Judicious choice of the beam defining aperture combined with back face particle detection allows for reproducible exit-side hole diameters between 18 and 100 nm. The nanopore direct drilling technique does not require potentially damaging broad area exposure to tailor hole sizes. Moreover, this technique successfully achieves breakthrough despite the effects of varying membrane thickness, redeposition, polycrystalline grain structure, and slight ion beam current fluctuations.

Multivariate statistical analysis of three-spatial-dimension TOF-SIMS raw data sets.

Three-spatial-dimension (3D) time-of-flight-secondary ion mass spectrometry (TOF-SIMS) analysis can be performed if an X-Y image is saved at each depth of a depth profile. In this paper, we will show how images reconstructed from specified depths, depth profiles generated from specific X-Y coordinates, as well as three-spatial-dimensional rendering provide for a better understanding of the sample than traditional depth profiling where only a single spectrum is collected at each depth. We will also demonstrate, for the first time, that multivariate statistical analysis (MVSA) tools can be used to perform a rapid, unbiased analysis of the entire 3D data set. In the example shown here, retrospective analysis and MVSA revealed a more complete picture of the 3D chemical distribution of the sample than did the as-measured depth profiling alone. Color overlays of the MVSA components as well as animated movies allowing for visualization (in 3D) from various angles will be provided.

Multivariate statistical analysis of concatenated time-of-flight secondary ion mass spectrometry spectral images. Complete description of the sample with one analysis.

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) instruments are capable of saving an entire mass spectrum at each pixel of an image, allowing for retrospective analysis of masses that were not selected for analysis during data collection. These TOF-SIMS spectral images contain a wealth of information, but few tools are available to assist the analyst in visualizing the entire raw data set and as a result, most of the data are not analyzed. Automated, nonbiased, multivariate statistical analysis (MVSA) techniques are useful for converting the massive amount of data into a smaller number of chemical components (spectra and images) that are needed to fully describe the TOF-SIMS measurement. Many samples require two back-to-back TOF-SIMS measurements in order to fully characterize the sample, one measurement of the fraction of positively charged secondary ions (positive ion fraction) and one measurement of the fraction of negatively charged secondary ions (negative ion fraction). Each measurement then needs to be individually evaluated. In this paper, we report the first MVSA analysis of a concatenated TOF-SIMS data set comprising positive ion and negative ion spectral images collected on the same region of a sample. MVSA of concatenated data sets provides results that are intuitive and fully describe the sample. The analytical insight provided by MVSA of the concatenated data set was not obtained when either polarity data set was analyzed separately.

Origins of growth stresses in amorphous semiconductor thin films.

Stress evolution during deposition of amorphous Si and Ge thin films is remarkably similar to that observed for polycrystalline films. Amorphous semiconductors were used as model materials to study the origins of deposition stresses in continuous films, where suppression of both strain relaxation and epitaxial strain inheritance provides considerable simplification. Our data show that bulk compression is established by surface stress, while a subsequent return to tensile stress arises from elastic coalescence processes occurring on the kinetically roughened surface.

Using the FIB to characterize nanoparticle materials.

In the 1-100-nm size regime, the properties of materials can differ significantly from those of their bulk counterparts. The present study applies the focused ion beam (FIB) tool to the characterization of nanoscale structures for scanning and transmission electron microscopy. The strength of this method is its ability to manufacture samples that cannot be produced using traditional means. The films of nanoparticles examined here are examples of such systems; the films are found to be not fully dense, composed of chemically heterogeneous areas and mechanically different from the substrate. Distinct advantages of the application of the FIB for characterization of nanoscale structures are highlighted for several nanoparticle structures. This successful application of FIB techniques provides a pathway to integrate the study of nanoscale production techniques and their resulting structure-property relationships.