Exciton Dynamics in MoS2-Pentacene and WSe2-Pentacene Heterojunctions.

We measured the exciton dynamics in van der Waals heterojunctions of transition metal dichalcogenides (TMDCs) and organic semiconductors (OSs). TMDCs and OSs are semiconducting materials with rich and highly diverse optical and electronic properties. Their heterostructures, exhibiting van der Waals bonding at their interfaces, can be utilized in the field of optoelectronics and photovoltaics. Two types of heterojunctions, MoS2-pentacene and WSe2-pentacene, were prepared by layer transfer of 20 nm pentacene thin films as well as MoS2 and WSe2 monolayer crystals onto Au surfaces. The samples were studied by means of transient absorption spectroscopy in the reflectance mode. We found that A-exciton decay by hole transfer from MoS2 to pentacene occurs with a characteristic time of 21 ± 3 ps. This is slow compared to previously reported hole transfer times of 6.7 ps in MoS2-pentacene junctions formed by vapor deposition of pentacene molecules onto MoS2 on SiO2. The B-exciton decay in WSe2 shows faster hole transfer rates for WSe2-pentacene heterojunctions, with a characteristic time of 7 ± 1 ps. The A-exciton in WSe2 also decays faster due to the presence of a pentacene overlayer; however, fitting the decay traces did not allow for the unambiguous assignment of the associated decay time. Our work provides important insights into excitonic dynamics in the growing field of TMDC-OS heterojunctions.

Energy-Level Alignment at Interfaces between Transition-Metal Dichalcogenide Monolayers and Metal Electrodes Studied with Kelvin Probe Force Microscopy.

We studied the energy-level alignment at interfaces between various transition-metal dichalcogenide (TMD) monolayers, MoS2, MoSe2, WS2, and WSe2, and metal electrodes with different work functions (WFs). TMDs were deposited on SiO2/silicon wafers by chemical vapor deposition and transferred to Al and Au substrates, with significantly different WFs to identify the metal-semiconductor junction behavior: oxide-terminated Al (natural oxidation) and Au (UV-ozone oxidation) with a WF difference of 0.8 eV. Kelvin probe force microscopy was employed for this study, based on which electronic band diagrams for each case were determined. We observed the Fermi-level pinning for MoS2, while WSe2/metal junctions behaved according to the Schottky-Mott limit. WS2 and MoSe2 exhibited intermediate behavior.