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1.
5.
Phys Rev Lett ; 102(13): 137202, 2009 Apr 03.
Artigo em Inglês | MEDLINE | ID: mdl-19392398

RESUMO

We report the direct measurement of the nonadiabatic component of the spin torque in domain walls. Our method is independent of both the pinning of the domain wall in the wire as well as of the Gilbert damping parameter. We demonstrate that the ratio between the nonadiabatic and the adiabatic components can be as high as 1, and explain this high value by the importance of the spin-flip rate to the nonadiabatic torque. In addition to their fundamental significance these results open the way for applications by demonstrating a significant increase of the spin torque efficiency.

6.
Phys Rev Lett ; 95(3): 031101, 2005 Jul 15.
Artigo em Inglês | MEDLINE | ID: mdl-16090732

RESUMO

We report on the observation of a previously unknown resonance at E(lab)(R)=194.1+/-0.6 keV in the 17O(p,alpha)14N reaction, with a measured resonance strength omegagamma(palpha)=1.6 +/- 0.2 meV. We studied in the same experiment the 17O(p,gamma)18F reaction by an activation method and the resonance-strength ratio was found to be omegagamma(palpha)/omegagamma(pgamma) = 470 +/- 50. The corresponding excitation energy in the 18F compound nucleus was determined to be 5789.8 +/- 0.3 keV by gamma-ray measurements using the 14N(alpha, gamma)18F reaction. These new resonance properties have important consequences for 17O nucleosynthesis and gamma-ray astronomy of classical novae.

7.
Phys Rev Lett ; 93(10): 106602, 2004 Sep 03.
Artigo em Inglês | MEDLINE | ID: mdl-15447433

RESUMO

The direct impact of the electronic structure on spin-polarized transport has been experimentally proven in high-quality Fe/MgO/Fe epitaxial magnetic tunnel junctions, with an extremely flat bottom Fe/MgO interface. The voltage variation of the conductance points out the signature of an interfacial resonance state located in the minority band of Fe(001). When coupled to a metallic bulk state, this spin-polarized interfacial state enhances the band matching at the interface and therefore increases strongly the conductivity in the antiparallel magnetization configuration. Consequently, the tunnel magnetoresistance is found to be positive below 0.2 V and negative above. On the other hand, when the interfacial state is either destroyed by roughness-related disorder or not coupled to the bulk, the magnetoresistance is almost independent on the bias voltage.

8.
Phys Rev Lett ; 89(10): 107206, 2002 Sep 02.
Artigo em Inglês | MEDLINE | ID: mdl-12225223

RESUMO

Magnetic interactions involving ferromagnetic layers separated by an insulating barrier have been studied experimentally on a fully epitaxial hard-soft magnetic tunnel junction: Fe/MgO/Fe/Co. For a barrier thickness below 1 nm, a clear antiferromagnetic interaction is observed. Moreover, when reducing the MgO thickness from 1 to 0.5 nm, the coupling strength increases up to J=-0.26 erg.cm(-2). This behavior, well fitted by theoretical models, provides an unambiguous signature of the interlayer exchange coupling by spin-polarized quantum tunneling.

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