Epitaxial Nanoflag Photonics: Semiconductor Nanoemitters Grown with Their Nanoantennas.

Semiconductor nanostructures are desirable for electronics, photonics, quantum circuitry, and energy conversion applications as well as for fundamental science. In photonics, optical nanoantennas mediate the large size difference between photons and semiconductor nanoemitters or detectors and hence are instrumental for exhibiting high efficiency. In this work we present epitaxially grown InP nanoflags as optically active nanostructures encapsulating the desired characteristics of a photonic emitter and an efficient epitaxial nanoantenna. We experimentally characterize the polarized and directional emission of the nanoflag-antenna and show the control of these properties by means of structure, dimensions, and constituents. We analyze field enhancement and light extraction by the semiconductor nanoflag antenna, which yield comparable values to enhancement factors of metallic plasmonic antennas. We incorporated quantum emitters within the nanoflag structure and characterized their emission properties. Merging of active nanoemitters with nanoantennas at a single growth process enables a new class of devices to be used in nanophotonics applications.

Doubly Resonant Nanoantennas on Diamond for Spatial Addressing of Spin States.

The negatively charged nitrogen-vacancy (NV) color center in diamond is an important atom-like system for emergent quantum technologies and sensing at room temperature. The light emission rates and collection efficiency are key issues toward realizing NV-based quantum devices. In that aspect, we propose and experimentally demonstrate a selective and spatially localized method for enhancing the light-matter interaction of shallow NV centers in bulk diamonds. This was achieved by polarized doubly resonant plasmonic antennas, tuned to the NV phonon sideband transition peak in the red and the narrowband near infrared (NIR) singlet transition. We obtained a photoluminescence (PL) enhancement factor of about 10 from NV centers within the hot spot of the antenna area (excluding the extraction efficiency enhancement) and similar emission lifetime reduction. The functionality of the double resonance antenna is controlled by the impinging light polarization.

InP Nanoflag Growth from a Nanowire Template by in Situ Catalyst Manipulation.

Quasi-two-dimensional semiconductor materials are desirable for electronic, photonic, and energy conversion applications as well as fundamental science. We report on the synthesis of indium phosphide flag-like nanostructures by epitaxial growth on a nanowire template at 95% yield. The technique is based on in situ catalyst unpinning from the top of the nanowire and its induced migration along the nanowire sidewall. Investigation of the mechanism responsible for catalyst movement shows that its final position is determined by the structural defect density along the nanowire. The crystal structure of the "flagpole" nanowire is epitaxially transferred to the nanoflag. Pure wurtzite InP nanomembranes with just a single stacking fault originating from the defect in the flagpole that pinned the catalyst were obtained. Optical characterization shows efficient highly polarized photoluminescence at room temperature from a single nanoflag with up to 90% degree of linear polarization. Electric field intensity enhancement of the incident light was calculated to be 57, concentrated at the nanoflag tip. The presented growth method is general and thus can be employed for achieving similar nanostructures in other III-V semiconductor material systems with potential applications in active nanophotonics.

First demonstration of plasmonic GaN quantum cascade detectors with enhanced efficiency at normal incidence.

We have designed, fabricated and measured the first plasmon-assisted normal incidence GaN/AlN quantum cascade detector (QCD) making use of the surface plasmon resonance of a two-dimensional nanohole Au array integrated on top of the detector absorption region. The spectral response of the detector at room temperature is peaked at the plasmon resonance of 1.82 µm. We show that the presence of the nanohole array induces an absolute enhancement of the responsivity by a factor of ~30 over that of the bare device at normal incidence and by a factor of 3 with respect to illumination by the 45° polished side facet. We show that this significant improvement arises from two phenomena, namely, the polarization rotation of the impinging light from tangential to normal induced by the plasmonic structure and from the enhancement of the absorption cross-section per quantum well due to the near-field optical intensity of the plasmonic wave.

Plasmonic nanoantennas for broad-band enhancement of two-photon emission from semiconductors.

We demonstrate experimentally and theoretically a broad-band enhancement of the spontaneous two-photon emission from AlGaAs at room temperature by plasmonic nanoantenna arrays fabricated on the semiconductor surface. Plasmonic structures with inherently low quality factors but very small effective volumes are shown to be optimal. A 20-fold enhancement was achieved for the entire antenna array, corresponding to an enhancement of nearly 3 orders of magnitude for charge carriers emitting at the near field of a plasmonic antenna.