Vertically Stacked Transparent Organic Photodetectors for Light Intensity-Independent Wavelength Recognition.

Wavelength recognition is one of the important functions of photodetectors. However, wavelength recognition of the reported photodetectors generally depends on light intensity, which limits the practical applications. Here, a light intensity-independent wavelength recognition scheme based on vertically stacked transparent photodetectors is reported. By analyzing light intensity attenuation behavior in the multiple stacked photodetectors, the wavelength of incident light can be accurately determined. Due to the high transparency of the detectors, the multiple stacked detectors allow incident light to pass through. Meanwhile, since the attenuation coefficients at different wavelengths are attributed to the detector's absorption characteristics, the intensity of incident light and its wavelength can be determined by analyzing the attenuation coefficients measured through each stacked detector. Consistent wavelength values obtained at different light intensities verify the light intensity-independence of the multistacked detector system.

Bias-Switchable Dual-Mode Organic Photodetector with High Operational Stability Using Self-Trapped Cs3Cu2I5 Interfacial Layer.

Conventional photovoltaic (PV)-photodetectors are hard to detect fainted signals, while photomultiplication (PM)-capable devices indispensable for detecting weak light and are prone to degrade under strong light illumination and large bias, and it is urgent to realize highly efficient integrated detecting system with both PM and PV operation modes. In this work, one lead-free Cs3Cu2I5 nanocrystals with self-trapping exciton nature was introduced as interfacial layer adjacent to bulk and layer-by-layer heterojunction structure, and corresponding organic photodetectors with bias-switchable dual modes are demonstrated. The fabricated device exhibits low operating bias (0 V for PV mode and 0.8 V for PM mode), high specific detectivity (~1013 Jones), fast response speed as low as 1.59 µs, large bandwidth over 0.2 MHz and long-term operational stability last for 4 months in ambient condition. This synergy strategy also validated in different materials and device architectures, providing a convenient and scalable production process to develop highly efficient bias-switchable multi-functional organic optoelectrical applications.

Spectrally Selective Full-Color Single-Component Organic Photodetectors Based on Donor-Acceptor Conjugated Molecules.

Photodetectors based on organic materials are attractive due to their tunable spectral response and biocompatibility, meaning that they are a promising platform for an artificial human eye. To mimic the photoelectric response of the human eye, narrowband spectrally-selective organic photodetectors are in great demand, and single-component organic photodetectors based on donor-acceptor conjugated molecules are a noteworthy candidate. In this work, we present single-component selective full-color organic photodetectors based on donor-acceptor conjugated molecules synthetized to mimic the spectral response of the cones and rods of a human eye. The photodetectors demonstrated a high responsivity (up to 70 mA/W) with a response time of less than 1 µs, which is three orders of magnitude faster than that of human eye photoreceptors. Our results demonstrate the possibility of the creation of an artificial eye or photoactive eye "prostheses".

NIR-II Absorbing Monodispersed Oligomers Based on N-B←N Unit.

Organic molecules with near-infrared II (NIR II) light absorption are essential for many biological and opto-electronic applications. Herein, we report monodispersed oligomers as NIR II light absorber using a new molecular design strategy of resonant N-B←N unit, i.e. balanced resonant boron-nitrogen covalent bond (B-N) and boron-nitrogen coordination bond (B←N). We synthesize a series of monodispersed oligomers with thiophene-fused 4,4-difluoro-4-bora-3a,4a-diaza-s-indacene (TB), which contains resonant N-B←N unit, as the repeating unit. The TB pentamer exhibits the maximum absorption wavelength of 1169 nm, which is the longest for oligomers reported so far. Organic photodetectors (OPDs) with the TB tetramer as the electron acceptor shows the specific detectivity of 2.98×1011 Jones at 1180 nm under zero bias. This performance is among the best for NIR II OPDs. These results indicate a new kind of NIR II absorbing molecules as excellent opto-electronic materials.

Infrared Organic Photodetectors Employing Ultralow Bandgap Polymer and Non-Fullerene Acceptors for Biometric Monitoring.

Recent efforts in the field of organic photodetectors (OPD) have been focused on extending broadband detection into the near-infrared (NIR) region. Here, two blends of an ultralow bandgap push-pull polymer TQ-T combined with state-of-the-art non-fullerene acceptors, IEICO-4F and Y6, are compared to obtain OPDs for sensing in the NIR beyond 1100 nm, which is the cut off for benchmark Si photodiodes. It is observed that the TQ-T:IEICO-4F device has a superior IR responsivity (0.03 AW-1 at 1200 nm and -2 V bias) and can detect infrared light up to 1800 nm, while the TQ-T:Y6 blend shows a lower responsivity of 0.01 AW-1 . Device physics analyses are tied with spectroscopic and morphological studies to link the superior performance of TQ-T:IEICO-4F OPD to its faster charge separation as well as more favorable donor-acceptor domains mixing. In the polymer blend with Y6, the formation of large agglomerates that exceed the exciton diffusion length, which leads to high charge recombination, is observed. An application of these devices as biometric sensors for real-time heart rate monitoring via photoplethysmography, utilizing infrared light, is demonstrated.

In Operando Visualization of Interfacial Band Bending in Photomultiplying Organic Photodetectors.

Charge injection is a basic transport process that strongly affects performance of optoelectronic devices such as light-emitting diodes and photodetectors. In these devices, the charge injection barrier is related to the band bending at the active layer/electrode interface and exhibits sophisticated dependence on interface structure and device operating conditions, making it difficult to determine via either theoretical prediction or experimental measurements. Here, in operando cross-sectional scanning Kelvin probe microscopy (SKPM) has been applied in organic photodetectors to visualize the interfacial band bending. The photoinduced interfacial band bending becomes more significant with increasing reverse bias voltage, resulting in reduced charge injection barrier and facilitated charge injection. The photoinduced injection current is orders of magnitude higher than the photocurrent directly generated from light absorption and thus leads to significant photomultiplication. Furthermore, the interfacial structure is tuned to further enhance photoinduced interfacial band bending and the photomultiplication factor.

The Synthesis and Optoelectronic Applications for Tellurophene-Based Small Molecules and Polymers.

Tellurophene-based small molecules and polymers have received great attentions owing to their applications in thin-film transistors, solar cells, and sensors. This article reviews the current progress of the synthesis and applications of tellurophene-based small molecules and polymers. The physicochemical properties and optoelectronic applications of tellurophene-based materials are summarized and discussed. In the end, the challenges and outlook of tellurophene-based materials are presented.

A Simple, Small-Bandgap Porphyrin-Based Conjugated Polymer for Application in Organic Electronics.

A simple, small-bandgap porphyrin-based conjugated polymer with ethylnyl linkers is prepared for application in organic electronics. Beneficial from quinoid resonance form, the polymer showed near-infrared absorption up to 1000 nm and strong photoluminescence emission with a quantum yield of 0.2%. The polymer can be successfully applied to several electronic devices, such as organic field-effect transistors with ambipolar charge transport, organic solar cells with a high external quantum efficiency of 0.58 at 970 nm, and organic photodetectors with high responsibility and detectivity.

Highly Narrowband Photomultiplication Type Organic Photodetectors.

Filterless narrowband response organic photodetectors (OPDs) present a great challenge due to the broad absorption range of organic semiconducting materials. The reported narrowband response OPDs also suffer from low external quantum efficiency (EQE) in the desired response window and low rejection ratio. Here, we report highly narrowband photomultiplication (PM) type OPDs based on P3HT:PC71BM (100:1, wt/wt) as active layer without an optical filter. The full width at half-maximum (fwhm) of the PM-type OPDs can be well retained less than 30 nm under different biases. Meanwhile, the champion EQE and rejection ratio approach 53 500% and 2020 at -60 V bias, respectively. The small fwhm should be attributed to the sharp absorption edge of active layer with small amount of PC71BM. The PM phenomenon is attributed to hole tunneling injection from the external circuit assisted by trapped electron in PC71BM near the Al electrode under light illumination. These highly narrowband PM-type OPDs should have great potential applications in sensitively detecting specific wavelength light and be blind to light outside of the desired response window.

High-Performance Wearable Organic Photodetectors by Molecular Design and Green Solvent Processing for Pulse Oximetry and Photoplethysmography.

White-light detection from the visible to the near-infrared region is central to many applications such as high-speed cameras, autonomous vehicles, and wearable electronics. While organic photodetectors (OPDs) are being developed for such applications, several challenges must be overcome to produce scalable high-detectivity OPDs. This includes issues associated with low responsivity, narrow absorption range, and environmentally friendly device fabrication. Here, an OPD system processed from 2-methyltetrahydrofuran (2-MeTHF) sets a record in light detectivity, which is also comparable with commercially available silicon-based photodiodes is reported. The newly designed OPD is employed in wearable devices to monitor heart rate and blood oxygen saturation using a flexible OPD-based finger pulse oximeter. In achieving this, a framework for a detailed understanding of the structure-processing-property relationship in these OPDs is also developed. The bulk heterojunction (BHJ) thin films processed from 2-MeTHF are characterized at different length scales with advanced techniques. The BHJ morphology exhibits optimal intermixing and phase separation of donor and acceptor moieties, which facilitates the charge generation and collection process. Benefitting from high charge carrier mobilities and a low shunt leakage current, the newly developed OPD exhibits a specific detectivity of above 1012  Jones over 400-900 nm, which is higher than those of reference devices processed from chlorobenzene and ortho-xylene.

Flexible Broadband Organic Photodetectors with Ternary Planar-Mixed Heterojunction Semiconductors and Solution-Processed Polymeric Electrode.

Flexible organic photodetectors (OPDs) hold immense promise in health monitoring sensors, flexible imaging sensors, and portable optical communication. Nevertheless, the actualization of high-performance flexible electronics has been hindered by rigid electrodes such as metals or metal oxides. In this work, we constructed a flexible broadband organic photodetector using a solution-processed polymeric electrode, which exhibits flexibility surpassing that of conventional indium tin oxide (ITO) electrodes. Additionally, we employed a planar-mixed heterojunction (PMHJ) through a sequential deposition method and introduced PC71BM as the third constituent into the PM6/Y6 binary active layer, resulting in enhanced photodetection performance and a broadend spectral range. The optimized OPDs demonstrated remarkable detectivity (D*) exceeding 1012 Jones in brodband from 300 to 900 nm, with a champion D* of 6.31 × 1012 Jones at 790 nm. Furthermore, after undergoing 500 cycles of bending, the D* retained approximately 78% of its original performance, highlighting the outstanding mechanical stability. This work presents a promising pathway toward the development of flexible broadband OPDs using a straightforward method, offering enhanced compatibility in diverse application scenarios and propelling the frontier of flexible optoelectronic research.

Advancing Detectivity and Stability of Near-Infrared Organic Photodetectors via a Facile and Efficient Cathode Interlayer.

Near-infrared (NIR) organic photodetectors (OPDs) are pivotal in numerous technological applications due to their excellent responsivity within the NIR region. Polyethylenimine ethoxylated (PEIE) has conventionally been employed as an electron transport layer (hole-blocking layer) to suppress dark current (JD) and enhance charge transport. However, the limitations of PEIE in chemical stability, processing conditions, environmental impact, and absorption range have spurred the development of alternative materials. In this study, we introduced a novel solution: a hybrid of sol-gel zinc oxide (ZnO) and N,N'-bis(N,N-dimethylpropan-1-amine oxide)perylene-3,4,9,10-tetracarboxylic diimide (PDINO) as the electron transport layer for NIR-OPDs. Our fabricated OPD exhibited significantly improved responsivity, reduced internal traps, and enhanced charge transfer efficiency. The detectivity, spanning from 400 to 1100 nm, surpassed ∼5 × 1012 Jones, reaching ∼1.1 × 1012 Jones at 1000 nm, accompanied by an increased responsivity of 0.47 A/W. Also, the unpackaged OPD remarkedly demonstrated stable JD and external quantum efficiency (EQE) over 1000 h under dark storage conditions. This innovative approach not only addresses the drawbacks of conventional PEIE-based OPDs but also offers promising avenues for the development of high-performance OPDs in the future.

An A-D-A'-D-A-Type Narrow Bandgap Electron Acceptor Based on Selenophene-Flanked Diketopyrrolopyrrole for Sensitive Near-Infrared Photodetection.

Near-infrared organic photodetectors possess great application potential in night vision, optical communication, and image sensing, but their development is limited by the lack of narrow bandgap organic semiconductors. A-D-A'-D-A-type molecules, featuring multiple intramolecular charge transfer effects, offer a robust framework for achieving near-infrared light absorption. Herein, we report a novel A-D-A'-D-A-type narrow bandgap electron acceptor named DPPSe-4Cl, which incorporates a selenophene-flanked diketopyrrolopyrrole (Se-DPP) unit as its central A' component. This molecule demonstrates exceptional near-infrared absorption properties with an absorption onset reaching 1120 nm and a low optical bandgap of 1.11 eV, owing to the strong electron-withdrawing ability and quinoidal resonance effect induced by the Se-DPP unit. By implementing a doping compensation strategy assisted by Y6 to reduce the trap density in the photoactive layer, the optimized organic photodetector based on DPPSe-4Cl exhibited efficient spectral response and remarkable sensitivity in the range of 300-1100 nm. Particularly, a specific detectivity surpassing 1012 Jones in the wavelength range of 410-1030 nm is achieved. This work offers a promising approach for developing highly sensitive visible to near-infrared broadband photodetection technology using organic semiconductors.

Highly-Polarized Solar-Blind Ultraviolet Organic Photodetectors.

Developing high-performance polarization-sensitive ultraviolet photodetectors is crucial for their application in military remote sensing, detection, bio-inspired navigation, and machine vision. However, the significant absorption in the visible light range severely limits the application of polarization-sensitive ultraviolet photodetectors, such as high-quality anti-interference imaging. Here, based on a wide-bandgap organic semiconductor single crystal (trans-1,2-bis(5-phenyldithieno[2,3-b:3',2'-d]thiophen-2-yl)ethene, BPTTE), high-performance polarization-sensitive solar-blind ultraviolet photodetectors with a dichroic ratio close to 4.26 are demonstrated. The strong anisotropy of 2D grown BPTTE single crystals in molecular vibration and optical absorption is characterized by various techniques. Under voltage modulation, stable and efficient detection of polarized light is demonstrated, attributed to the intrinsic anisotropy of transition dipole moment in the bc crystal plane, rather than other factors. Finally, high-contrast polarimetric imaging and anti-interference imaging are successfully demonstrated based on BPTTE single crystal photodetectors, highlighting the potential of organic semiconductors for polarization-sensitive solar-blind ultraviolet photodetectors.

Dual-Band Photomultiplication-Type Organic Photodetectors with Ultrahigh Signal-to-Noise Ratios.

A series of dual-band photomultiplication (PM)-type organic photodetectors (OPDs) were fabricated by employing a donor(s)/acceptor (100:1, wt/wt) mixed layer and an ultrathin Y6 layer as the active layers, as well as by using PNDIT-F3N as an interfacial layer near the indium tin oxide (ITO) electrode. The dual-band PM-type OPDs exhibit the response range of 330-650 nm under forward bias and the response range of 650-850 nm under reverse bias. The tunable spectral response range of dual-band PM-type OPDs under forward or reverse bias can be explained well from the trapped electron distribution near the electrodes. The dark current density (JD) of the dual-band PM-type OPDs can be efficiently suppressed by employing PNDIT-F3N as the anode interfacial layer and the special active layers with hole-only transport characteristics. The light current density (JL) of the dual-band PM-type OPDs can be slightly increased by incorporating wide-bandgap polymer P-TPDs with relatively large hole mobility (µh) in the active layers. The signal-to-noise ratios of the optimized dual-band PM-type OPDs reach 100,980 under -50 V bias and white light illumination with an intensity of 1.0 mW·cm-2, benefiting from the ultralow JD by employing wide-bandgap PNDIT-F3N as the anode interfacial buffer layer and the increased JL by incorporating appropriate P-TPD in the active layers.

Sensitive Organic Photodetectors With Spectral Response up to 1.3 µm Using a Quinoidal Molecular Semiconductor.

Detecting short-wavelength infrared (SWIR) light has underpinned several emerging technologies. However, the development of highly sensitive organic photodetectors (OPDs) operating in the SWIR region is hindered by their poor external quantum efficiencies (EQEs) and high dark currents. Herein, the development of high-sensitivity SWIR-OPDs with an efficient photoelectric response extending up to 1.3 µm is reported. These OPDs utilize a new ultralow-bandgap molecular semiconductor featuring a quinoidal tricyclic electron-deficient central unit and multiple non-covalent conformation locks. The SWIR-OPD achieves an unprecedented EQE of 26% under zero bias and an even more impressive EQE of up to 41% under a -4 V bias at 1.10 µm, effectively pushing the detection limit of silicon photodetectors. Additionally, the low energetic disorder and trap density in the active layer lead to significant suppression of thermal-generation carriers and dark current, resulting in excellent detectivity (Dsh *) exceeding 1013 Jones from 0.50 to 1.21 µm and surpassing 1012 Jones even at 1.30 µm under zero bias, marking the highest achievements for OPDs beyond the silicon limit to date. Validation with photoplethysmography measurements, a spectrometer prototype in the 0.35-1.25 µm range, and image capture under 1.20 µm irradiation demonstrate the extensive applications of this SWIR-OPD.

Near-Infrared Organic Photodetectors with Spectral Response over 1200 nm Adopting a Thieno[3,4-c]thiadiazole-Based Acceptor.

The nonclassical ten-pi-electron 5,5-fused thieno[3,4-c]thiadiazole (TTD) unit is an excellent building block for constructing sub-silicon-band gap organic semiconductors. However, no small molecule acceptor (SMA) materials based on TTD have been reported despite the fact that high-sensitivity near-infrared organic photodetectors (OPDs) are generally achieved by using SMAs. In this work, we report a TTD-based narrow band gap (0.95 eV) SMA material TTD(DTC-2FIC)2 with strong near-infrared absorption. Employing PTB7-Th as a donor, OPDs based on TTD(DTC-2FIC)2 exhibit an optimized responsivity of 0.095 (±0.007) A W-1 at 1100 nm and sustain a decent responsivity of 0.074 (±0.008) A W-1 at 1200 nm. Moreover, a good specific detectivity over 1 × 1011 Jones is achieved at a wavelength of 1200 nm. Detailed characterizations imply that the performance of TTD(DTC-2FIC)2-based OPDs may be substantially improved by choosing lower-mixing donors with shallower energy levels. This work demonstrates that SMAs incorporating TTD as the core unit hold promise for constructing high-sensitivity sub-silicon-band gap OPDs.

High Performance Polarization-Resolved Photodetectors Based on Intrinsically Stretchable Organic Semiconductors.

Polarization-sensitive photodetectors based on anisotropic semiconductors sense both the intensity and polarization state information without extra optical components. Here, a self-powered organic photodetector (OPD) composed of intrinsically stretchable polymer donor PNTB6-Cl and non-fullerene acceptor Y6 is reported. The PNTB6-Cl:Y6 photoactive film accommodates a remarkable 100% strain without fracture, exhibiting a high optical anisotropy of 1.8 after strain alignment. The resulting OPD not only shows an impressive faint-light detection capability (high spectral responsivity of 0.45 A W-1 and high specific detectivity of 1012 Jones), but also has a high anisotropic responsivity ratio of 1.42 under the illumination of parallel and traversed polarized light. To the best of the authors' knowledge, both the detector performance and polarization features are among the best-performing OPDs and polarization-sensitive photodetectors. As a proof-of-concept, polarization-sensitive OPDs are also utilized to set up a polarimetric imaging system and full-Stokes polarimeter. This work explores the potential of highly stretchable organic semiconductors for state-of-art polarization imaging and spectroscopy applications.

The State-of-the-Art Solution-Processed Single Component Organic Photodetectors Achieved by Strong Quenching of Intermolecular Emissive State and High Quadrupole Moment in Non-Fullerene Acceptors.

A bulk-heterojunction (BHJ) blend is commonly used as the photoactive layer in organic photodetectors (OPDs) to utilize the donor (D)/acceptor (A) interfacial energetic offset for exciton dissociation. However, this strategy often complicates optimization procedures, raising serious concerns over device processability, reproducibility, and stability. Herein, highly efficient OPDs fabricated with single-component organic semiconductors are demonstrated via solution-processing. The non-fullerene acceptors (NFAs) with strong intrinsic D/A character are used as the photoactive layer, where the emissive intermolecular charge transfer excitonic (CTE) states are formed within <1 ps, and efficient photocurrent generation is achieved via strong quenching of these CTE states by reverse bias. Y6 and IT-4F-based OPDs show excellent OPD performances, low dark current density (≈10-9 A cm-2 ), high responsivity (≥0.15 A W-1 ), high specific detectivity (>1012 Jones), and fast photo-response time (<10 µs), comparable to the state-of-the-art BHJ OPDs. Together with strong CTE state quenching by electric field, these excellent OPD performances are also attributed to the high quadrupole moments of NFA molecules, which can lead to large interfacial energetic offset for efficient CTE dissociation. This work opens a new way to realize efficient OPDs using single-component systems via solution-processing and provides important molecular design rules.

High-Quality Artery Monitoring and Pathology Imaging Achieved by High-Performance Synchronous Electrical and Optical Output of Near-Infrared Organic Photodetector.

Near-infrared organic photodetectors (NIR-OPDs) are significant technologies in emerging biomedicine applications for uniquely wearable, noninvasive, low-cost advantages. However, biosignals are weak and changing rapidly so practical biodetection and bioimaging are still challenging for NIR-OPDs. Herein, high-performance NIR-OPDs with synchronous optical output are realized by recombining anode-injected electrons with photogenerated holes on emitters. Owing to high detection performance of 4.5 × 1012 Jones detectivity and 120 kHz -3 dB bandwidth, five arteries are monitored by transmission-type method and cardiac cycle is analyzed. Importantly, the synchronous optical output is direct emission demonstrating outstanding photon conversion efficiency approaching 20% and luminance signal-to-noise ratio over 8000. Consequently, pathology imaging is directly developed without complex readout circuits and arrays from which squamous metaplasia of cervix and carcinoma of large intestine are observed clearly. The NIR-OPD demonstrates strategies for high-performance synchronous electrical/optical output and directly imaging. Biomedicine applications implemented here are high level, representing important steps for NIR-OPDs toward providing clues for clinical diagnosis.