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Is ion sputtering always a "negative homoepitaxial deposition"?
Costantini, G; Buatier de Mongeot, F; Boragno, C; Valbusa, U.
Afiliación
  • Costantini G; INFM-Unità di Ricerca di Genova, Centro CFSBT-CNR and Dipartimento di Fisica, Via Dodecaneso 33, I-16146 Genova, Italy.
Phys Rev Lett ; 86(5): 838-41, 2001 Jan 29.
Article en En | MEDLINE | ID: mdl-11177953
ABSTRACT
We present a scanning tunneling microscopy study of the direct comparison between homoepitaxial deposition and surface ion sputtering on the Ag(001) system. At a temperature of 200 K, sputtering results in mound formation similar to the epitaxy case, while at higher temperatures an erosive regime sets in with the appearance of regular square pits. Contrary to the conventional wisdom, which considers ion sputtering as a deposition of vacancies, the analysis of single ion impact events reveals that the process produces both adatom and vacancy clusters. The key parameter determining the temperature dependence of surface morphology turns out to be the mobility of the adatom clusters which exceeds that of vacancy clusters.
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Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2001 Tipo del documento: Article País de afiliación: Italia
Buscar en Google
Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2001 Tipo del documento: Article País de afiliación: Italia