Optically transparent thin-film transistors based on 2D multilayer MoS2 and indium zinc oxide electrodes.
Nanotechnology
; 26(3): 035202, 2015 Jan 21.
Article
en En
| MEDLINE
| ID: mdl-25548952
ABSTRACT
We report on optically transparent thin film transistors (TFTs) fabricated using multilayered molybdenum disulfide (MoS2) as the active channel, indium tin oxide (ITO) for the back-gated electrode and indium zinc oxide (IZO) for the source/drain electrodes, respectively, which showed more than 81% transmittance in the visible wavelength. In spite of a relatively large Schottky barrier between MoS2 and IZO, the n-type behavior with a field-effect mobility (µ(eff)) of 1.4 cm(2) V(-1) s(-1) was observed in as-fabricated transparent MoS2 TFT. In order to enhance the performances of transparent MoS2 TFTs, a picosecond pulsed laser was selectively irradiated onto the contact region of the IZO electrodes. Following laser annealing, µ(eff) increased to 4.5 cm(2) V(-1) s(-1), and the on-off current ratio (I(on)/I(off)) increased to 10(4), which were attributed to the reduction of the contact resistance between MoS2 and IZO.
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1
Colección:
01-internacional
Banco de datos:
MEDLINE
Idioma:
En
Revista:
Nanotechnology
Año:
2015
Tipo del documento:
Article