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Low Resistivity and High Breakdown Current Density of 10 nm Diameter van der Waals TaSe3 Nanowires by Chemical Vapor Deposition.
Empante, Thomas A; Martinez, Aimee; Wurch, Michelle; Zhu, Yanbing; Geremew, Adane K; Yamaguchi, Koichi; Isarraraz, Miguel; Rumyantsev, Sergey; Reed, Evan J; Balandin, Alexander A; Bartels, Ludwig.
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  • Empante TA; Department of Chemistry and Material Science & Engineering Program , University of California-Riverside , Riverside , California 92521 , United States.
  • Martinez A; Department of Chemistry and Material Science & Engineering Program , University of California-Riverside , Riverside , California 92521 , United States.
  • Wurch M; Department of Chemistry and Material Science & Engineering Program , University of California-Riverside , Riverside , California 92521 , United States.
  • Zhu Y; Department of Materials Science and Engineering , Stanford University , Stanford , California 94304 , United States.
  • Geremew AK; Nano-Device Laboratory, Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States.
  • Yamaguchi K; Department of Chemistry and Material Science & Engineering Program , University of California-Riverside , Riverside , California 92521 , United States.
  • Isarraraz M; Department of Chemistry and Material Science & Engineering Program , University of California-Riverside , Riverside , California 92521 , United States.
  • Rumyantsev S; Nano-Device Laboratory, Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States.
  • Reed EJ; Center for Terahertz Research and Applications , Institute of High Pressure Physics, Polish Academy of Sciences , Warsaw 01-142 , Poland.
  • Balandin AA; Department of Materials Science and Engineering , Stanford University , Stanford , California 94304 , United States.
  • Bartels L; Nano-Device Laboratory, Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States.
Nano Lett ; 19(7): 4355-4361, 2019 Jul 10.
Article en En | MEDLINE | ID: mdl-31244229
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2019 Tipo del documento: Article País de afiliación: Estados Unidos
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2019 Tipo del documento: Article País de afiliación: Estados Unidos