Atom Probe Tomography Characterization of Dopant Distributions in Si FinFET: Challenges and Solutions.

Hu, Rong; Xue, Jing; Wu, Xingping; Zhang, Yanbo; Zhu, Huilong; Sha, Gang

Hu, Rong; Xue, Jing; Wu, Xingping; Zhang, Yanbo; Zhu, Huilong; Sha, Gang.

Afiliación

Hu R; Herbert Gleiter Institute of Nanoscience, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu210094, China.
Xue J; Herbert Gleiter Institute of Nanoscience, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu210094, China.
Wu X; Herbert Gleiter Institute of Nanoscience, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu210094, China.
Zhang Y; Institute of Microelectronics of Chinese Academy of Sciences, Beijing100029, China.
Zhu H; Institute of Microelectronics of Chinese Academy of Sciences, Beijing100029, China.
Sha G; Herbert Gleiter Institute of Nanoscience, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu210094, China.

Microsc Microanal ; 26(1): 36-45, 2020 Feb.

Article en En | MEDLINE | ID: mdl-31753061

Palabras clave

FinFET; atom probe tomography; dopant distribution; reconstruction; sampling direction effect

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Microsc Microanal Año: 2020 Tipo del documento: Article País de afiliación: China

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