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Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/high-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium.
Xie, Lu; Zhu, Huilong; Zhang, Yongkui; Ai, Xuezheng; Wang, Guilei; Li, Junjie; Du, Anyan; Kong, Zhenzhen; Yin, Xiaogen; Li, Chen; Zhao, Liheng; Li, Yangyang; Jia, Kunpeng; Li, Ben; Radamson, Henry H.
Afiliación
  • Xie L; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Zhu H; Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Zhang Y; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Ai X; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Wang G; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Li J; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Du A; Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Kong Z; Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangdong, 510535, China.
  • Yin X; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Li C; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Zhao L; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Li Y; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Jia K; Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Li B; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Radamson HH; Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, China.
Nanomaterials (Basel) ; 10(9)2020 Aug 29.
Article en En | MEDLINE | ID: mdl-32872556
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Año: 2020 Tipo del documento: Article País de afiliación: China
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Año: 2020 Tipo del documento: Article País de afiliación: China