Your browser doesn't support javascript.
loading
Modulation of 1 MeV electron irradiation on ultraviolet response in MoS2FET.
Li, Heyi; Liu, Chaoming; Zhang, Yanqing; Qi, Chunhua; Ma, Guoliang; Wang, Tianqi; Dong, Shangli; Huo, Mingxue.
Afiliación
  • Li H; Harbin Institute of Technology, Harbin, People's Republic of China.
  • Liu C; Harbin Institute of Technology, Harbin, People's Republic of China.
  • Zhang Y; Harbin Institute of Technology, Harbin, People's Republic of China.
  • Qi C; Harbin Institute of Technology, Harbin, People's Republic of China.
  • Ma G; Harbin Institute of Technology, Harbin, People's Republic of China.
  • Wang T; Harbin Institute of Technology, Harbin, People's Republic of China.
  • Dong S; Harbin Institute of Technology, Harbin, People's Republic of China.
  • Huo M; Harbin Institute of Technology, Harbin, People's Republic of China.
Nanotechnology ; 32(47)2021 Sep 02.
Article en En | MEDLINE | ID: mdl-34388741
ABSTRACT
The material, electrical and ultraviolet optoelectronic properties of few layers bottom molybdenum disulfide (MoS2) field effect transistors (FETs) device was investigated before and after 1 MeV electron irradiation. Due to the participation of SiO2in conduction, we discovered novel photoelectric properties and a relatively long photogenerated carrier lifetime (several tens of seconds). Electron irradiation causes lattice distortion, the decrease of carrier mobility, and the increase of interface state. It leads to the degradation of output characteristics, transfer characteristics and photocurrent of the MoS2FET.
Palabras clave
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2021 Tipo del documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2021 Tipo del documento: Article