Preparation and Readout of Multielectron High-Spin States in a Gate-Defined GaAs/AlGaAs Quantum Dot.

Kiyama, H; Yoshimi, K; Kato, T; Nakajima, T; Oiwa, A; Tarucha, S

Kiyama, H; Yoshimi, K; Kato, T; Nakajima, T; Oiwa, A; Tarucha, S.

Afiliación

Kiyama H; SANKEN, Osaka University, Ibaraki, Osaka 567-0047, Japan.
Yoshimi K; Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-0043, Japan.
Kato T; Center for Quantum Information and Quantum Biology, Osaka University, Toyonaka, Osaka 560-8531, Japan.
Nakajima T; Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan.
Oiwa A; Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan.
Tarucha S; Center for Emergent Matter Science, RIKEN, Wako, Saitama 351-0198, Japan.

Phys Rev Lett ; 127(8): 086802, 2021 Aug 20.

Article en En | MEDLINE | ID: mdl-34477427

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2021 Tipo del documento: Article País de afiliación: Japón

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